New Product SS8P2L, SS8P3L Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP TM • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Low forward voltage drop, low power losses • High efficiency 1 • Low thermal resistance 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C TO-277A (SMPC) • AEC-Q101 qualified Anode 1 K Cathode • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Anode 2 • Halogen-free according to IEC 61249-2-21 definition PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM 20 V, 30 V IFSM 150 A EAS 20 mJ VF at IF = 8.0 A 0.472 V TJ max. 150 °C MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free and RoHS compliant, commercial grade Base P/NHM3 - halogen-free and RoHS compliant, automotive grade TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS8P2L SS8P3L S82 S83 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 8.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 150 A Non-repetitive avalanche energy at IAS = 2 A, TJ = 25 °C EAS 20 mJ TJ, TSTG - 55 to + 150 °C Operating junction and storage temperature range Document Number: 89001 Revision: 24-Nov-09 20 30 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] V www.vishay.com 1 New Product SS8P2L, SS8P3L Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 4.0 A IF = 8.0 A TA = 25 °C IF = 4.0 A IF = 8.0 A TA = 125 °C Maximum reverse current (2) VR = 30 V TA = 25 °C TA = 125 °C Typical junction capacitance 4.0 V, 1 MHz Maximum instantaneous forward voltage (1) SYMBOL TYP. MAX. UNIT 0.447 0.533 0.57 0.357 0.472 0.49 IR 55 24 200 35 µA mA CJ 330 - pF V VF Notes (1) (2) Pulse test: 300 µs pulse width, 1 % duty cycle Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RθJA RθJL Typical thermal resistance SS8P2L (1) SS8P3L 60 3.5 UNIT °C/W Note (1) Units mounted on recommended P.C.B. 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS8P3L-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel SS8P3L-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel SS8P3LHM3/86A (1) 0.10 86A 1500 7" diameter plastic tape and reel SS8P3LHM3/87A (1) 0.10 87A 6500 13" diameter plastic tape and reel Note (1) Automotive grade www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89001 Revision: 24-Nov-09 New Product SS8P2L, SS8P3L Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 Instantaneous Reverse Current (mA) 1000 Average Forward Current (A) Resistive or Inductive Load 8 6 4 2 TL measured at the Cathode Band Terminal 0 25 50 10 TA = 125 °C 1 0.1 TA = 25 °C 0.01 75 100 125 150 175 10 20 30 40 50 60 70 80 90 100 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Figure 1. Maximum Forward Current Derating Curve Figure 4. Typical Reverse Leakage Characteristics D = 0.2 4 1000 D = 0.5 D = 0.8 D = 0.3 D = 0.1 D = 1.0 3 2 T 1 D = tp/T TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Junction Capacitance (pF) 5 Average Power Loss (W) TA = 150 °C 0.001 0 tp 0 100 0 1 2 3 4 5 6 7 8 9 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Figure 2. Forward Power Loss Characteristics Figure 5. Typical Junction Capacitance 100 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TA = 150 °C 10 TA = 125 °C 1 TA = 25 °C 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 Junction to Ambient 10 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Figure 6. Typical Transient Thermal Impedance Document Number: 89001 Revision: 24-Nov-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 New Product SS8P2L, SS8P3L Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC TO-277A www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89001 Revision: 24-Nov-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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