New Product MBR1090CT, MBR10100CT Vishay General Semiconductor Dual Common-Cathode High Voltage Schottky Rectifier FEATURES TMBS® • Trench MOS Schottky technology TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 3 2 1 PIN 1 PIN 2 PIN 3 CASE • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 5.0 A VRRM 90 V, 100 V IFSM 120 A VF 0.75 V TJ max. 150 °C Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR1090CT MBR10100CT UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V VDC 90 100 V Maximum DC blocking voltage IF(AV) 10 5.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 120 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode EAS 60 mJ Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 0.5 A dV/dt 10 000 V/µs TJ, TSTG - 65 to + 150 °C Maximum average forward rectified current at TC = 105 °C Voltage rate of change (rated VR) Operating junction and storage temperature range Document Number: 89125 Revision: 26-Apr-10 total device per diode For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product MBR1090CT, MBR10100CT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5.0 A IF = 5.0 A Maximum instantaneous forward voltage per diode (1) Maximum reverse current per diode at working peak reverse voltage (2) SYMBOL MBR1090CT MBR10100CT UNIT TC = 125 °C TC = 25 °C VF 0.75 0.85 V TJ = 25 °C TJ = 100 °C IR 100 6.0 µA mA Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance per diode MBR1090CT MBR10100CT UNIT 4.4 RθJC °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR10100CT-E3/4W 1.87 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 120 Peak Forward Surge Current (A) Average Forward Current (A) Resistive or Inductive Load 8 6 4 2 0 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 100 80 60 40 20 0 0 50 100 150 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89125 Revision: 26-Apr-10 New Product MBR1090CT, MBR10100CT Vishay General Semiconductor 4.0 10 000 D = 0.8 D = 0.5 Junction Capacitance (pF) Average Power Loss (W) 3.5 D = 0.3 3.0 D = 1.0 D = 0.2 2.5 D = 0.1 2.0 1.5 T 1.0 D = tp/T 0.5 TJ = 25 °C f = 1 MHz Vsig = 50 mVp-p 1000 100 tp 0 10 0 1 2 3 5 4 6 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Figure 3. Forward Power Loss Characteristics Per Diode Figure 6. Typical Junction Capacitance Per Diode 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 TA = 25 °C 0.1 0 0.2 0.6 0.4 0.8 1.0 1.2 1.4 1.6 Junction to Case 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 4. Typical Instantaneous Forward Characteristics Per Diode Figure 7. Typical Transient Thermal Impedance Per Diode Instantaneous Reverse Current (mA) 100 TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1 0.01 TA = 25 °C 0.001 0.0001 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Figure 5. Typical Reverse Characteristics Per Diode Document Number: 89125 Revision: 26-Apr-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 New Product MBR1090CT, MBR10100CT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) www.vishay.com 4 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89125 Revision: 26-Apr-10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1