VISHAY SS8P4C

New Product
SS8P3C, SS8P4C
Vishay General Semiconductor
High Current Density Surface Mount
Dual Common-Cathode Schottky Rectifier
FEATURES
eSMP TM Series
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
K
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
1
• Meets MSL level 1, per
LF maximum peak of 260 °C
2
J-STD-020,
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TO-277A (SMPC)
K
Cathode
Anode 1
• Halogen-free according to IEC 61249-2-21 definition
Anode 2
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 4.0 A
VRRM
30 V, 40 V
IFSM
120 A
EAS
20 mJ
VF at IF = 4 A
0.42 V
TJ max.
150 °C
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters and
polarity protection application.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
VRRM
per diode
SS8P4C
S83C
S84C
30
40
8.0
total device
Maximum average forward rectified current (fig. 1)
SS8P3C
IF(AV)
IFSM
120
Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode
EAS
20
TJ, TSTG
- 55 to + 150
Document Number: 89029
Revision: 10-May-11
V
A
4.0
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
UNIT
A
°C
For technical questions within your region, please contact one of the following:
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[email protected], [email protected], [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SS8P3C, SS8P4C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 2.0 A
TA = 25 °C
IF = 4.0 A
Instantaneous forward voltage
per diode
VF (1)
IF = 2.0 A
TA = 25 °C
Rated VR
Typical junction capacitance per diode
TA = 125 °C
4.0 V, 1 MHz
TYP.
MAX.
0.42
-
UNIT
0.48
0.58
0.32
-
0.42
0.48
130
300
μA
26
35
mA
230
-
pF
V
TA = 125 °C
IF = 4.0 A
Reverse current per diode
SYMBOL
IR (2)
CJ
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Typical thermal resistance per diode
RJA
SS8P3C
(1)
SS8P4C
UNIT
60
°C/W
RJL
3
Note
(1) Units mounted on recommended PCB 1 oz. pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS8P4C-M3/86A
0.10
86A
1500
7" diameter plastic tape and reel
SS8P4C-M3/87A
0.10
87A
6500
13" diameter plastic tape and reel
SS8P4CHM3/86A
(1)
0.10
86A
1500
7" diameter plastic tape and reel
SS8P4CHM3/87A
(1)
0.10
87A
6500
13" diameter plastic tape and reel
Note
Automotive grade
(1)
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For technical questions within your region, please contact one of the following:
Document Number: 89029
DiodesAmer[email protected], [email protected], [email protected]
Revision: 10-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SS8P3C, SS8P4C
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
10
Instantaneous Reverse Current (mA)
1000
Average Forward Current (A)
Resistive or Inductive Load
8
6
4
TL measured
at the Cathode Band Terminal
2
100
TA = 150 °C
10
TA = 125 °C
1
0.1
TA = 25 °C
0.01
0.001
0
0
25
50
75
100
125
150
10
175
20
30
40
50
60
90
100
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
1000
D = 0.5
D = 0.3
D = 0.8
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.2
2.0
Junction Capacitance (pF)
Average Power Loss (W)
80
Percent of Rated Peak Reverse Voltage (%)
2.4
D = 0.1
D = 1.0
1.6
1.2
T
0.8
0.4
D = tp/T
100
tp
10
0
0
1
2
3
4
0.1
5
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
70
Lead Temperature (°C)
TA = 150 °C
10
TA = 125 °C
1
TA = 25 °C
0.1
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
10
Junction to Ambient
1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Document Number: 89029
Revision: 10-May-11
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SS8P3C, SS8P4C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC TO-277A
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For technical questions within your region, please contact one of the following:
Document Number: 89029
[email protected], [email protected], [email protected]
Revision: 10-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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