BYG21K & BYG21M Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 800 V, 1000 V IFSM 30 A IR 1.0 µA VF 1.6 V trr 120 ns ER 20 mJ TJ max. 150 °C MECHANICAL DATA Case: DO-214AC (SMA) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code BYG21K BYG21M BYG21K BYG21M 800 1000 UNIT Maximum repetitive peak reverse voltage VRRM Average forward current IF(AV) 1.5 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C ER 20 mJ Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C Document Number: 88961 Revision: 11-Apr-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] V www.vishay.com 1 BYG21K & BYG21M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL BYG21K BYG21M UNIT Maximum instantaneous forward voltage (1) IF = 1 A IF = 1.5 A TJ = 25 °C VF 1.5 1.6 V Maximum reverse current VR = VRRM TJ = 25 °C TJ = 100 °C IR 1 10 µA Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 120 ns Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance, junction to lead TL = const. Typical thermal resistance, junction to ambient BYG21K BYG21M UNIT RθJL 25 °C/W RθJA 150 (1) 125 (2) 100 (3) °C/W Notes: (1) Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 µm Cu (3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 µm Cu ORDERING INFORMATION (Example) UNIT WEIGHT (g) PACKAGE CODE BASE Q’TY DELIVERY MODE BYG21K-E3/TR PREFERRED P/N 0.064 TR 1800 7" diameter plastic tape and reel BYG21K-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel BYG21KHE3/TR (1) 0.064 TR 1800 7" diameter plastic tape and reel BYG21KHE3/TR3 (1) 0.064 TR3 7500 13" diameter plastic tape and reel Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.6 10 Average Forward Current (A) Forward Current (A) TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 RθJA = 25 K/W 1.4 VR = VRRM Half Sine-Wave 1.2 1.0 RθJA = 125 K/W 0.8 0.6 RθJA = 150 K/W 0.4 0.2 0.001 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 Forward Voltage (V) Ambient Temperature (°C) Figure 1. Forward Current vs. Forward Voltage Figure 2. Max. Average Forward Current vs. Ambient Temperature www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88961 Revision: 11-Apr-08 BYG21K & BYG21M Vishay General Semiconductor 200 100 Reverse Recovery Charge (nC) Reverse Current (µA) VR = VRRM 10 TA = 125 °C 150 TA = 100 °C TA = 75 °C 100 TA = 50 °C TA = 25 °C 50 IR = 0.5 A, iR = 0.125 A 1 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 Figure 3. Reverse Current vs. Junction Temperature Figure 6. Max. Reverse Recovery Charge vs. Forward Current Thermal Resistance for Pulse Cond. (K/W) Forward Current (A) 120 Reverse Power Dissipation (mW) 0 Junction Temperature (°C) VR = VRRM 100 PR - Limit at 100 % VR 80 60 PR - Limit at 80 % VR 40 20 0 25 50 75 100 125 150 1000 125 K/W DC 100 tP/T = 0.5 tP/T = 0.2 tP/T = 0.1 10 tP/T = 0.05 tP/T = 0.02 Single Pulse tP/T = 0.01 1 10-5 10-4 10-3 10-2 10-1 100 Junction Temperature (°C) Pulse Length (s) Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature Figure 7. Thermal Response 101 102 25 Diode Capacitance (pF) f = 1 MHz 20 15 10 5 0 0.1 1 10 100 Reverse Voltage (V) Figure 5. Diode Capacitance vs. Reverse Voltage Document Number: 88961 Revision: 11-Apr-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 BYG21K & BYG21M Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88961 Revision: 11-Apr-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1