SK50GH12T4T 2 #3 4," & Absolute Maximum Ratings Symbol Conditions IGBT 1, 5 2 #3 4, , 5 2 !83 4, ,: SEMITOP 4 IGBT module SK50GH12T4T !#77 1 83 - 2 87 4, 97 - !37 - <#7 1 5 2 !37 4, !7 @ 2 #3 4, 39 - 2 87 4, +3 - !37 - $$3 - ,:2 $ ' , " ; ! 1,, 2 =77 1> 1) ; !3 1> 1, ? !#77 1 Units 2 #3 4, 1) ® Values Inverse Diode 5 2 !83 4, : :2 $ ' " ; ! 2 !7 > & % 5 2 !37 4, Module A:B Target Data %5 1 Features !"#"$ % & ' ( )*+ ,-. + /0 (, Typical Applications* 1 - -," ! D 1) 2 1," , 2 !"8 - , 1) 2 7 1" 1, 2 1, 1, 2 7 1" 1) 2 #7 1 1,7 , 1,AB , , 1) 2 !3 1 , 2 37 -" 1) 2 !3 1 1, 2 #3" 1) 2 7 1 1) 2 C81DDDE!31 :) 5 2 #3 4, AB A&&B & :) 2 $# G L 2 F#7 -L@ :)&& 2 $# G && :A5CB )* 4, #377 1 min. typ. 3 3"= max. Units 9"3 1 7"7! - 7"+ 5 2 !#3 4, 977 1 5 2 #3 4, 7"= 7"F 5 2 !37 4, 7"8 7"= 5 2 #34, #7 G 5 2 !374, $7 G 5 2 #34,%D !"= # 5 2 !374,%D #"# #"+ & 2 ! HI 3"3+ 7"+! 7"$# $83 , + K 9$ 93 ="$ 3#! =7 M 3 M 7"93 NL/ , J) C+7 DDD E!#3 5 2 #3 4, 5 2 !#3 4, ) 4, 2 #3 4," & Characteristics Symbol Conditions IGBT 1)AB C+7 DDD E!83 1,, 2 9771 ,2 375 2 !37 4, 1 1 1 GH-T 1 27-04-2009 DIL © by SEMIKRON SK50GH12T4T Characteristics Symbol Conditions Inverse Diode 1 2 1, 2 37 -> 1) 2 7 1 17 ® SEMITOP 4 IGBT module min. typ. max. Units 5 2 #3 4,%D #"# #"3 1 5 2 !37 4,%D #"! #"+3 1 5 2 #3 4, !"$ !"3 1 5 2 !37 4, 7"F !"! 1 5 2 #3 4, != G 5 2 !37 4, #+ G 5 2 !37 4, $7 8"# @, :: J 2 37 L 2 F#7 -L@ 1,,29771 #"!3 M :A5CB0 !"73 NL/ Freewheeling Diode 1 2 1, SK50GH12T4T 2 -> 1) 2 1 17 Target Data :: J 2 - 5 2 4,%D 1 5 2 4, 1 5 2 4, 1 5 2 4, @, M Features !"#"$ % & ' ( )*+ ,-. + /0 (, Typical Applications* 1 O NL/ #"3 #"83 ( 97 +F$<3P K Temperature sensor :!77 2 !774, A:#323OGB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. GH-T 2 27-04-2009 DIL © by SEMIKRON SK50GH12T4T Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (Ts) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 27-04-2009 DIL © by SEMIKRON SK50GH12T4T Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 27-04-2009 DIL © by SEMIKRON SK50GH12T4T , =+ A " ,*" & Q #B , =+ 5 )HC 27-04-2009 DIL © by SEMIKRON