SEMIKRON SK100GB066T

SK100GB066T
Absolute Maximum Ratings
Symbol Conditions
IGBT
)34
5
!
5 * 08. 2
!:;
* 1. 2- * 1. 2
7,,
)
97
$
* 8, 2
8.
$
1,,
$
< 1,
)
!:;* 1 !
) * +7, )= )"3 > 1, )=
)34 ? 7,, )
Units
* 1. 2
)"34
SEMITOP® 3
Values
5
* 0., 2
7
@
* 1. 2
0,A
$
AB
$
1,,
$
Inverse Diode
IGBT Module
!&
* 08. 2
* 8, 2
!&:;
SK100GB066T
5
!&:;* 1 !&
Module
!:;4
Target Data
C5
DB, EEE F08.
2
DB, EEE F01.
2
1.,,
)
)
Features
!" #
$% # &'
! ( $
$- 0 E
Characteristics
Symbol Conditions
IGBT
)"3
)"3 * )3- ! * 0-7 $
!34
)"3 * , )- )3 * )34
!"34
)3 * , )- )"3 * 1, )
Typical Applications*
)"3 * 0. )
Remarks
) * +,,,) $-.,/-0
)3
! * 0,, $- )"3 * 0. )
3
Units
7-.
)
,-,,17
$
$
01,,
$
)
,-A
0-0
5 * 01. 2
,-8
0
)
5 * 1.2
7-.
A
G
* 0.,2
9-.
0,-.
G
5 * 1.2
CE
0-B.
0-A.
)
5 * 0.,2
CE
0-7.
1-,.
)
7-1A
,-B
&
&
,-09
&
)"3* D8)EEEF0.)
0,,,
:" * +1 G
I * 1.8. $I@
:" * +1 G
I * 1.8. $I@
0BB
01A
8
0,B,
90
J
7
J
,-8A
KI'
)3 * 1.- )"3 * , )
3
:5D
.-A
* 01. 2
* 0 ;/
H"
.
max.
* 1. 2
5
typ.
5 * 1. 2
5
3
min.
5 * 1. 2
5
)3,
* 1. 2- !"
) * +,,)
!* 0,,$
5 * 0., 2
)"3*D8IF0.)
GB-T
1
20-10-2009 DIL
© by SEMIKRON
SK100GB066T
Characteristics
Symbol Conditions
Inverse Diode
)& * )3
!& * 0,, $= )"3 * , )
)&,
min.
IGBT Module
Units
* 1. 2
CE
0-+.
)
5
* 0., 2
CE
0-+0
)
5 * 1. 2
&
SEMITOP 3
max.
5
)
5 * 0., 2
®
typ.
,-A.
)
5
* 1. 2
5
* 0., 2
7-+
G
G
5 * 0., 2
7,
.-7
$
@
!::;
H
!& * 0,, $
I * 1.8. $I@
3
):* +,,)
0-8
J
:5D
,-90
KI'
Freewheeling Diode
SK100GB066T
)& * )3
!& * $= )"3 * )
)&,
&
Target Data
Features
!" #
$% # &'
! ( Typical Applications*
Remarks
) * +,,,) $-.,/-0
5
* 2
CE
)
5
* 2
)
5
* 2
)
5 * 2
$
@
!::;
H
!& * $
3
):*+,,)
J
:5D&
KI'
;
L
1-.
1-8.
(
7,
B9+<.M
G
Temperature sensor
:0,,
*0,,2
:1.*.LG
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
GB-T
2
20-10-2009 DIL
© by SEMIKRON
SK100GB066T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (Ts)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
20-10-2009 DIL
© by SEMIKRON
SK100GB066T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
20-10-2009 DIL
© by SEMIKRON
SK100GB066T
UL recognized
file no. E 63 532
8+ 4 N 1E 4 N +-7 5
8+
;%!D
20-10-2009 DIL
© by SEMIKRON