SK35GB12T4 % () *# &+ Absolute Maximum Ratings Symbol Conditions IGBT !", - % () * - % /1) * 34 IGBT Module SK35GB12T4 & /(00 ! % 10 * 2) /0) 6 (0 ! - % /)0 * /0 ; % () * 0 % 10 * 2/ /0) (() 34% 2 5 ! % 700 !8 !" 9 /) !8 !", : /(00 ! Units % () * !", SEMITOP® 2 Values Inverse Diode - % /1) * 34 34% 2 5 ,4 & % /0 8 $+ $' - % /)0 * Module <34,= Target Data ' Features Typical Applications* Remarks !"#$ # ! % & ' '$ ! # / ? !" % !"# % /#( ", !" % 0 !# !" % !", * >0 ??? @/() * ()00 ! % () *# &+ Characteristics Symbol Conditions IGBT !"<= >0 ??? @/1) min. typ. ) )#7 - % () * max. A#) ! 0#00) - % /() * ", !" % 0 !# !" % (0 ! - % () * /(0 - % /() * !"0 - % () * - % /)0 * " !"<$= !" % /) ! % 2) # !" % /) ! !" % ()# !" % 0 ! <= " <++= + 3++ % (( B H % (C00 H; "++ 3<->= & /#/ /#2 / /#( ! ! (/# B - % /)0* 2)#1 B - % ()*&'? /#7) (#0) - % /)0*&'? (#() (#) + % / 4DE /#C) 0#/)) 0#//) /7C (7 () 2#(1 202 10 G 2#2 G /#(/ IH !"% >1!???@/)! 3 % (( B - % ()* F Units ! % A00! % 2) - % /)0 * !"% 6/) ! ! ! GB 1 27-05-2009 DIL © by SEMIKRON SK35GB12T4 Characteristics Symbol Conditions Inverse Diode ! % !" % 2) 8 !" % 0 ! !0 ® SEMITOP 2 IGBT Module SK35GB12T4 Target Data Features Typical Applications* min. typ. max. Units - % () *&'? (#2 (#A( ! - % /)0 *&'? (#(C (#A( ! - % () * /#2 /#) ! - % /)0 * 0#C /#/ ! - % () * (1 2( B - % /)0 * 2C#1 2# B - % /)0 * 20 ( ; 334 F % 2) H % (C00 H; " !% A00! /#A G 3<->= & /#)) IH 4 $ J (#() (#) 20 K This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. Remarks !"#$ # ! % & ' '$ GB 2 27-05-2009 DIL © by SEMIKRON SK35GB12T4 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (Ts) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 27-05-2009 DIL © by SEMIKRON SK35GB12T4 Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 27-05-2009 DIL © by SEMIKRON SK35GB12T4 $ 2( <, $ + & $ &$ &L (= $ 2( 5 27-05-2009 DIL © by SEMIKRON