SEMIKRON SK35GB12T4

SK35GB12T4
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Symbol Conditions
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Inverse Diode
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Features
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Remarks
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1
27-05-2009 DIL
© by SEMIKRON
SK35GB12T4
Characteristics
Symbol Conditions
Inverse Diode
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®
SEMITOP 2
IGBT Module
SK35GB12T4
Target Data
Features
Typical Applications*
min.
typ.
max.
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
Remarks
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GB
2
27-05-2009 DIL
© by SEMIKRON
SK35GB12T4
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (Ts)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
27-05-2009 DIL
© by SEMIKRON
SK35GB12T4
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
27-05-2009 DIL
© by SEMIKRON
SK35GB12T4
$ 2( <, $
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$ 2(
5
27-05-2009 DIL
© by SEMIKRON