New Product SiE882DF Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for Double-Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size, ≤ 100 V • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC ID (A)a VDS (V) Silicon Limit RDS(on) (Ω) 25 Package Qg (Typ.) Limit 0.0014 at VGS = 10 V 229 60 0.0018 at VGS = 4.5 V 202 60 46 nC Package Drawing www.vishay.com/doc?72945 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS D D S G D 2 1 • VRM • DC/DC Conversion: Low-Side • Server Vcore D G D 1 G 2 S S 3 4 Top View D 5 5 4 3 Bottom View Top surface is connected to pins 1, 5, 6, and 10 S N-Channel MOSFET For Related Documents Ordering Information: SiE882DF-T1-GE3 (Lead (Pb)-free and Halogen-free) www.vishay.com/ppg?65002 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ID IDM TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS Limit 25 ± 20 229 (Silicon Limit) 60a (Package Limit) 60a 47b, c 41b, c 100 60a 4.3b, c 50 125 125 80 5.2b, c 3.3b, c - 55 to 150 260 Unit V A mJ TC = 25 °C TC = 70 °C PD W Maximum Power Dissipation TA = 25 °C TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range °C Soldering Recommendations (Peak Temperature)d, e Notes: a. Package limited is 60 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 65002 S09-1221-Rev. A, 29-Jun-09 www.vishay.com 1 New Product SiE882DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t ≤ 10 s Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain Top) Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). Symbol RthJA RthJC (Drain) RthJC (Source) Typical 20 0.8 2.2 Maximum 24 1 2.7 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 µA 25 Zero Gate Voltage Drain Current IDSS Typ. Max. Unit Static ID(on) a On-State Drain Current Drain-Source On-State Resistance a Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM Pulse Diode Forward Currenta VSD Body Diode Voltage trr Body Diode Reverse Recovery Time Q Body Diode Reverse Recovery Charge rr ta Reverse Recovery Fall Time tb Reverse Recovery Rise Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 25 V, VGS = 0 V VDS = 25 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A 1.0 VDS = 12.5 V, VGS = 4.5 V, ID = 20 A VDD = 12.5 V, RL = 1.25 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 0.2 6400 1400 550 96 46 18 12 1.1 45 170 65 85 20 15 45 10 TC = 25 °C IS = 10 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 2.2 ± 100 1 10 V nA µA A 0.0011 0.0015 125 VDS = 12.5 V, VGS = 10 V, ID = 20 A VDD = 12.5 V, RL = 1.25 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω mV/°C 25 VDS = 12.5 V, VGS = 0 V, f = 1 MHz f = 1 MHz V 25 - 6.0 1.7 0.8 55 70 25 30 0.0014 0.0018 Ω S pF 145 70 2.2 70 255 100 130 30 25 70 15 60 100 1.2 85 105 nC Ω ns A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65002 S09-1221-Rev. A, 29-Jun-09 New Product SiE882DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 100 VGS = 3 V VGS = 10 V thru 4 V 30 I D - Drain Current (A) I D - Drain Current (A) 80 60 40 20 TC = 25 °C 10 20 TC = 125 °C VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0020 8000 0.0016 0.0012 R DS(on) - On-Resistance (Ω) R DS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V VGS = 10 V 0.0008 6000 4000 Coss 2000 0.0004 Crss 0.0000 0 0 20 40 60 80 100 0 5 10 20 25 ID - Drain Current (A) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 ID = 20 A ID = 20 A VDS = 12.5 V 1.6 8 VDS = 6 V 6 VDS = 20 V 4 2 VGS = 10 V 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 15 VGS = 4.5 V 1.2 1.0 0.8 0 0 20 40 60 Qg - Total Gate Charge (nC) Gate Charge Document Number: 65002 S09-1221-Rev. A, 29-Jun-09 80 100 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SiE882DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.005 100 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 20 A 10 TJ = 150 °C TJ = 25 °C 0.004 0.003 0.002 TJ = 125 °C 0.001 TJ = 25 °C 0.000 1 0.0 0.2 0.4 0.6 0.8 0 1.0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 2.0 50 1.8 40 ID = 250 µA Power (W) VGS(th) (V) 1.6 1.4 30 20 1.2 10 1.0 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* 1 ms I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65002 S09-1221-Rev. A, 29-Jun-09 New Product SiE882DF Vishay Siliconix 300 140 250 120 Power Dissipation (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 200 150 100 Package Limited 50 100 80 60 40 20 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65002 S09-1221-Rev. A, 29-Jun-09 www.vishay.com 5 New Product SiE882DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 68 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 10-2 4. Surface Mounted 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65002. www.vishay.com 6 Document Number: 65002 S09-1221-Rev. A, 29-Jun-09 Package Information Vishay Siliconix POLARPAK™ OPTION L M4 Product datasheet/information page contain links to applicable package drawing. 10 9 8 7 6 D G S S D M2 M1 M3 D G S 1 2 3 S 4 c D 5 A (Top View) b1 H4 H1 7 S 8 S 9 G b1 H1 10 D K4 6 D θ H3 b2 H2 b3 θ P1 K3 Z P1 T5 θ T3 M3 View A E E1 T2 T4 T1 T3 θ T5 M4 A b4 K4 A1 K3 P1 b4 P1 K2 K1 D1 D 0.26 b5 S 4 b5 S 3 G 2 D 1 b5 View A (Bottom View) 0.13 0.25 DETAIL Z D 5 0.39 A 0.20 0.33 0.58 Document Number: 72945 Revision: 11-Aug-08 www.vishay.com 1 Package Information Vishay Siliconix MILLIMETERS INCHES DIM MIN. NOM. MAX. MIN. NOM. MAX. A 0.75 0.80 0.85 0.030 0.031 0.033 A1 0.00 - 0.05 0.000 - 0.002 b1 0.48 0.58 0.68 0.019 0.023 0.027 b2 0.41 0.51 0.61 0.016 0.020 0.024 b3 2.19 2.29 2.39 0.086 0.090 0.094 b4 0.89 1.04 1.19 0.035 0.041 0.047 b5 0.23 0.33 0.43 0.009 0.013 0.017 c 0.20 0.25 0.30 0.008 0.010 0.012 D 6.00 6.15 6.30 0.236 0.242 0.248 D1 5.74 5.89 6.04 0.226 0.232 0.238 E 5.01 5.16 5.31 0.197 0.203 0.209 E1 4.75 4.90 5.05 0.187 0.193 0.199 H1 0.23 - - 0.009 - - H2 0.45 - 0.56 0.018 - 0.022 H3 0.31 0.41 0.51 0.012 0.016 0.020 H4 0.45 - 0.56 0.018 - 0.022 K1 4.22 4.37 4.52 0.166 0.172 0.178 K2 1.08 1.13 1.18 0.043 0.044 0.046 K3 1.37 - - 0.054 - - K4 0.24 - - 0.009 - - M1 4.30 4.50 4.70 0.169 0.177 0.185 M2 3.43 3.58 3.73 0.135 0.141 0.147 M3 0.22 - - 0.009 - - M4 0.05 - - 0.002 - - P1 0.15 0.20 0.25 0.006 0.008 0.010 T1 3.48 3.64 4.10 0.137 0.143 0.161 T2 0.56 0.76 0.95 0.022 0.030 0.037 T3 1.20 - - 0.047 - - T4 3.90 - - 0.153 - - T5 0 0.18 0.36 0.000 0.007 0.014 θ 0° 10° 12° 0° 10° 12° ECN: T-08441-Rev. C, 11-Aug-08 DWG: 5946 Notes Millimeters govern over inches. www.vishay.com 2 Document Number: 72945 Revision: 11-Aug-08 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S 7.300 (0.287) 0.510 (0.020) 0.510 (0.020) 0.410 (0.016) 0.955 (0.038) 0.955 (0.038) 4.520 (0.178) 6.310 (0.248) 0.895 (0.035) + 0.895 (0.035) 2.290 (0.090) 0.580 (0.023) 0.580 (0.023) 0.510 (0.020) APPLICATION NOTE Recommended Minimum for PolarPAK Option L and S Dimensions in mm/(Inches) No External Traces within Broken Lines Dot indicates Gate Pin (Part Marking) Return to Index www.vishay.com 6 Document Number: 73491 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1