New Product SiA975DJ Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.041 at VGS = - 4.5 V - 4.5a 0.060 at VGS = - 2.5 V - 4.5a 0.110 at VGS = - 1.8 V - 3.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • 100 % Rg Tested • Compliant to RoHS directive 2002/95/EC Qg (Typ.) 10.5 nC APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices and Game Consoles PowerPAK SC-70-6 Dual S1 S2 1 S1 2 G1 Marking Code 3 D1 Part # code D2 4 S2 G2 XXX Lot Traceability and Date Code G2 5 2.05 mm G1 DJX D2 D1 6 2.05 mm D1 Ordering Information: SiA975DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Limit - 12 ±8 - 4.5a - 4.5a - 4.5a,b, c - 4.4b, c - 15 - 4.5a - 1.6b, c 7.8 5 1.9b, c 1.2b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t≤5s 52 65 Maximum Junction-to-Ambientb, f °C/W RthJC Maximum Junction-to-Case (Drain) Steady State 12.5 16 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. Document Number: 65710 S10-0213-Rev. A, 25-Jan-10 www.vishay.com 1 New Product SiA975DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 12 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C 2.4 - 0.4 -1 V ± 100 nA VDS = - 12 V, VGS = 0 V -1 VDS = - 12 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ - 5 V, VGS = - 4.5 V RDS(on) V - 3.6 - 10 µA A VGS = - 4.5 V, ID = - 4.3 A 0.033 0.041 VGS = - 2.5 V, ID = - 3.6 A 0.049 0.060 VGS = - 1.8 V, ID = - 1.5 A 0.070 0.110 VDS = - 6 V, ID = - 4.6 A 12 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1500 VDS = - 6 V, VGS = 0 V, f = 1 MHz pF 260 250 VDS = - 6 V, VGS = - 8 V, ID = - 5.6 A VDS = - 6 V, VGS = - 4.5 V, ID = - 5.6 A 17 26 10.5 16 2.3 nC 2.5 f = 1 MHz td(on) VDD = - 6 V, RL = 1.3 Ω ID ≅ - 4.5 A, VGEN = - 4.5 V, Rg = 1 Ω tr td(off) 1.1 5.5 11 22 35 22 35 32 50 tf 15 25 td(on) 10 15 10 15 VDD = - 6 V, RL = 1.3 Ω ID ≅ - 4.5 A, VGEN = - 8 V, Rg = 1 Ω tr td(off) tf 30 40 12 20 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD - 4.5 - 15 IS = - 4.5 A, VGS = 0 V - 0.87 - 1.2 A V Body Diode Reverse Recovery Time trr 30 60 ns Body Diode Reverse Recovery Charge Qrr 15 30 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 4.5 A, dI/dt = 100 A/µs, TJ = 25 °C 15 15 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65710 S10-0213-Rev. A, 25-Jan-10 New Product SiA975DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 15 VGS = 5 V thru 2.5 V 8 2V ID - Drain Current (A) ID - Drain Current (A) 12 9 6 6 4 TC = 25 °C 1.5 V 2 3 TC = 125 °C 1V TC = - 55 °C 0 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.16 2.0 1500 VGS = 1.8 V 0.14 0.12 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1200 0.10 0.08 VGS = 2.5 V 0.06 600 Coss 300 VGS = 4.5 V 0.04 Ciss 900 Crss 0.02 0 0 3 6 9 12 15 0 3 6 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 8 12 1.4 ID = 5.6 A VGS = 4.5 V, 2.5 V ID = 4.3 A 1.3 6 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 9 VDS = 9.6 V 4 VDS = 3 V VDS = 6 V 2 1.2 1.1 VGS = 1.8 V ID = 1.5 A 1.0 0.9 0.8 0 0 3 6 9 12 15 18 0.7 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 65710 S10-0213-Rev. A, 25-Jan-10 150 www.vishay.com 3 New Product SiA975DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.15 100 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.12 10 TJ = 150 °C TJ = 25 °C 1 ID = 5.5 A, TJ = 125 °C 0.09 0.06 ID = 1.5 A, TJ = 125 °C 0.03 0.1 0.0 ID = 5.5 A, TJ = 25 °C ID = 1.5 A, TJ = 25 °C 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.9 20 0.8 15 ID = 250 μA Power (W) VGS(th) - (V) 0.7 0.6 10 0.5 5 0.4 0.3 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 TJ - Junction Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65710 S10-0213-Rev. A, 25-Jan-10 New Product SiA975DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 14 6 10 Power Dissipation (W) ID - Drain Current (A) 12 8 6 Package Limited 4 4 2 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65710 S10-0213-Rev. A, 25-Jan-10 www.vishay.com 5 New Product SiA975DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 t1 t2 2. Per Unit Base = RthJA = 110 °C/W Single Pulse 1. Duty Cycle, D = 3. TJM - TA = PDMZthJA (t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65710. www.vishay.com 6 Document Number: 65710 S10-0213-Rev. A, 25-Jan-10 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 2.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063) APPLICATION NOTE Dimensions in mm/(Inches) Return to Index www.vishay.com 12 Document Number: 70487 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1