New Product SiE860DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS directive 2002/95/EC ID (A) RDS(on) (Ω)e Silicon Limit 0.0021 at VGS = 10 V 178 60a 0.0028 at VGS = 4.5 V 154 60a VDS (V) 30 Package Qg (Typ.) Limit 34 nC Package Drawing www.vishay.com/doc?68796 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS D D S G • • • • D VRM, POL DC/DC Conversion Synchronous Rectification Server D G D 1 G 2 S S 3 4 Top View D 5 5 4 3 2 1 S Bottom View Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SiE860DF-T1-E3 (Lead (Pb)-free) SiE860DF-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET For Related Documents www.vishay.com/ppg?68786 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ID IDM TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS Limit 30 ± 20 178 (Silicon Limit) 60a (Package Limit) 60a 38b, c 31b, c 80 60a 4.3b, c 50 125 104 66 5.2b, c 3.3b, c - 55 to 150 260 Unit V A mJ TC = 25 °C TC = 70 °C PD Maximum Power Dissipation W TA = 25 °C TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range °C Soldering Recommendations (Peak Temperature)d, e Notes: a. Package limited at 60 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 68786 S09-1338-Rev. B, 13-Jul-09 www.vishay.com 1 New Product SiE860DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t ≤ 10 s Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain Top) Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). Symbol RthJA RthJC (Drain) RthJC (Source) Typical 20 0.9 2.7 Maximum 24 1.1 3.3 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS = 0 V, ID = 250 µA 30 Gate-Source Threshold Voltage Gate-Source Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) gfs Ciss Coss Crss Qg Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 21.7 A VGS = 4.5 V, ID = 19 A VDS = 15 V, ID = 21.7 A VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 20 A Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDS = 15 V, VGS = 4.5 V, ID = 20 A IS ISM VSD trr Qrr ta tb TC = 25 °C Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. f = 1 MHz VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω IS = 10 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C V 30 - 6.1 1.0 mV/°C 2.5 ± 100 1 10 25 V nA µA A 0.0017 0.0023 110 4500 850 300 70 34 14 9 0.9 35 20 50 30 16 10 40 10 0.8 35 30 21 14 0.0021 0.0028 Ω S pF 105 51 1.8 55 30 75 45 25 15 30 15 60 80 1.2 55 45 nC Ω ns A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68786 S09-1338-Rev. B, 13-Jul-09 New Product SiE860DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 10 TC = - 55 °C VGS = 10 V thru 4 V 8 I D - Drain Current (A) I D - Drain Current (A) VGS = 3 V 60 40 6 4 TC = 25 °C 20 2 TC = 125 °C VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0030 2.5 3.0 25 30 6000 5000 0.0026 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.5 0.0022 VGS = 10 V 0.0018 Ciss 4000 3000 2000 Coss 0.0014 1000 Crss 0 0.0010 0 20 40 60 80 0 5 10 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.8 10 ID = 21.7 A ID = 20 A 1.6 8 VDS = 15 V 6 VDS = 24 V 4 2 VGS = 10 V 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 15 VGS = 4.5 V 1.2 1.0 0.8 0 0 20 40 60 Qg - Total Gate Charge (nC) Gate Charge Document Number: 68786 S09-1338-Rev. B, 13-Jul-09 80 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SiE860DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.006 100 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 21.7 A TJ = 150 °C 10 TJ = 25 °C 0.005 0.004 TJ = 125 °C 0.003 0.002 TJ = 25 °C 0.001 1 0.0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 2.2 2.0 40 ID = 250 µA Power (W) VGS(th) (V) 1.8 1.6 1.4 30 20 1.2 10 1.0 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* 1 ms I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.01 DC BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68786 S09-1338-Rev. B, 13-Jul-09 New Product SiE860DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 200 120 Power Dissipation (W) I D - Drain Current (A) 160 120 80 Package Limited 90 60 30 40 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68786 S09-1338-Rev. B, 13-Jul-09 www.vishay.com 5 New Product SiE860DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 55 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68786. www.vishay.com 6 Document Number: 68786 S09-1338-Rev. B, 13-Jul-09 Package Information Vishay Siliconix POLARPAK™ OPTION M M1 M4 E1 E T2 T1 T4 T3 θ T5 M4 M2 M3 T5 θ T3 M3 View A c (Top View) A θ A1 θ D1 D DETAIL Z b5 b5 b5 0.127 0.254 K4 0.254 P1 K2 0.381 K1 P1 K3 A 0.203 0.332 K3 P1 0.584 K4 P1 H1 H4 b1 b4 b4 b3 H3 H2 b1 H1 b1 View A Document Number: 68796 Revision: 11-Aug-08 www.vishay.com 1 Package Information Vishay Siliconix MILLIMETERS INCHES DIM MIN. NOM. MAX. MIN. NOM. MAX. A 0.75 0.80 0.85 0.030 0.031 0.033 A1 0.00 - 0.05 0.000 - 0.002 b1 0.48 0.58 0.68 0.019 0.023 0.027 b2 0.41 0.51 0.61 0.016 0.020 0.024 b3 2.19 2.29 2.39 0.086 0.090 0.094 b4 0.89 1.04 1.19 0.035 0.041 0.047 b5 0.23 0.33 0.43 0.009 0.013 0.017 c 0.20 0.25 0.30 0.008 0.010 0.012 D 6.00 6.15 6.30 0.236 0.242 0.248 D1 5.74 5.89 6.04 0.226 0.232 0.238 E 5.01 5.16 5.31 0.197 0.203 0.209 E1 4.75 4.90 5.05 0.187 0.193 0.199 H1 0.23 - - 0.009 - - H2 0.45 - 0.56 0.018 - 0.022 H3 0.31 0.41 0.51 0.012 0.016 0.020 H4 0.45 - 0.56 0.018 - 0.022 K1 4.22 4.37 4.52 0.166 0.172 0.178 K2 0.59 0.64 0.69 0.023 0.025 0.027 K3 1.68 - - 0.066 - - K4 0.24 - - 0.009 - - M1 4.30 4.50 4.70 0.169 0.177 0.185 M2 3.43 3.58 3.73 0.135 0.141 0.147 M3 0.22 - - 0.009 - - M4 0.05 - - 0.002 - - P1 0.15 0.20 0.25 0.006 0.008 0.010 T1 3.48 3.64 4.10 0.137 0.143 0.161 T2 0.56 0.76 0.95 0.022 0.030 0.037 T3 1.20 - - 0.047 - - T4 3.90 - - 0.153 - - T5 0 0.18 0.36 0.000 0.007 0.014 θ 0° 10° 12° 0° 10° 12° ECN: T-08441-Rev. A, 11-Aug-08 DWG: 5967 Notes Millimeters govern over inches. www.vishay.com 2 Document Number: 68796 Revision: 11-Aug-08 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S 7.300 (0.287) 0.510 (0.020) 0.510 (0.020) 0.410 (0.016) 0.955 (0.038) 0.955 (0.038) 4.520 (0.178) 6.310 (0.248) 0.895 (0.035) + 0.895 (0.035) 2.290 (0.090) 0.580 (0.023) 0.580 (0.023) 0.510 (0.020) APPLICATION NOTE Recommended Minimum for PolarPAK Option L and S Dimensions in mm/(Inches) No External Traces within Broken Lines Dot indicates Gate Pin (Part Marking) Return to Index www.vishay.com 6 Document Number: 73491 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1