CMBT3904E NPN CMBT3906E PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS SOT-923 CASE FEATURES • Very Small Package Size • 200mA Collector Current • Low VCE(SAT) (0.1V Typ @ 50mA) • Miniature 0.8 x 0.6 x 0.4mm Ultra Low height profile FEMTOmini™ Surface Mount Package MAXIMUM RATINGS: (TA=25°C) ♦ Collector-Base Voltage w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMBT3904E (NPN) and CMBT3906E (PNP) are general purpose transistors with enhanced specifications. These devices are ideal for applications where ultra small size and power dissipation are the prime requirements. Packaged in the FEMTOmini™ SOT-923 package, these transistors provide performance characteristics suitable for the most demanding size constrained applications. MARKING CODES: CMBT3904E: B CMBT3906E: G APPLICATIONS • DC / DC Converters • Voltage Clamping • Protection Circuits • Battery powered applications including: Cell Phones, Digital Cameras, Pagers, PDAs, Laptop Computers, etc. SYMBOL UNITS 60 V Collector-Emitter Voltage VCBO VCEO 40 V 6.0 V Continuous Collector Current VEBO IC 200 mA 100 -65 to +150 mW °C 1250 °C/W ♦ Emitter-Base Voltage Power Dissipation Operating and Storage Junction Temperature Thermal Resistance PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL ICEV ♦ BVCBO BVCEO ♦ BVEBO ♦ VCE(SAT) ♦ VCE(SAT) VBE(SAT) VBE(SAT) TEST CONDITIONS VCE=30V, VEB=3.0V IC=10µA MIN NPN TYP PNP TYP 60 115 90 V MAX 50 UNITS nA IC=1.0mA 40 60 55 V IE=10µA 6.0 7.5 7.9 V 0.057 0.050 0.100 V 0.100 0.100 0.200 V 0.750 0.750 0.850 V 0.850 0.850 0.950 V IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 0.650 ♦ Enhanced specification. R1 (8-January 2010) CMBT3904E NPN CMBT3906E PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: SYMBOL TEST CONDITIONS ♦ hFE ♦ hFE hFE ♦ hFE hFE fT Cob Cib hie hre hfe hoe VCE=1.0V, IC=0.1mA VCE=1.0V, IC=1.0mA VCE=1.0V, IC=10mA MIN TYP NPN TYP 130 90 240 100 235 150 100 215 150 VCE=1.0V, IC=50mA VCE=1.0V, IC=100mA 70 110 120 30 50 55 VCE=20V, IC=10mA, f=100MHz 300 VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz PNP MAX UNITS 300 MHz 4.0 pF 8.0 pF VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz 1.0 12 kΩ 0.1 10 X10-4 VCE=10V, VCE=10V, IC=1.0mA, f=1.0kHz 100 400 IC=1.0mA, f=1.0kHz 1.0 60 μS NF VCE=5.0V, IC=100μA, RS =1.0kΩ, f=10Hz to 15.7kHz td tr VCC=3.0V, VBE=0.5V, VCC=3.0V, VBE=0.5V, ts tf 4.0 dB IB1=1.0mA 35 ns IB1=1.0mA 35 ns VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 200 ns VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 50 ns ♦ Enhanced specification. IC=10mA, IC=10mA, SOT-923 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODES: CMBT3904E: B CMBT3906E: G R1 (8-January 2010) w w w. c e n t r a l s e m i . c o m