CXT7820 SURFACE MOUNT VERY LOW VCE(SAT) PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT7820 is a very low VCE(SAT) PNP transistor designed for applications where electrical and thermal efficiency are prime requirements. Packaged in an industry standard SOT-89 case, this device brings updated electrical specifications and characteristics suitable for the most demanding designs. MARKING: FULL PART NUMBER SOT-89 CASE • Device is Halogen Free by design FEATURES: APPLICATIONS: • High Current (IC=1.0A) • VCE(SAT)=0.34V MAX @ IC=1.0A • SOT-89 surface mount package • Complementary NPN device: CXT3820 • DC/DC Converters • Voltage Clamping • Protection Circuits • Battery powered Cell Phones, Pagers, Digital Cameras, PDAs, Laptops, etc. MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=60V IEBO VEB=5.0V BVCBO IC=100µA 80 BVCEO IC=10mA 60 BVEBO IE=100µA 5.0 VCE(SAT) IC=100mA, IB=1.0mA VCE(SAT) IC=500mA, IB=50mA VCE(SAT) IC=1.0A, IB=100mA VBE(SAT) IC=1.0A, IB=50mA VBE(ON) VCE=5.0V, IC=1.0A hFE VCE=5.0V, IC=1.0mA 200 hFE VCE=5.0V, IC=500mA 150 hFE VCE=5.0V, IC=1.0A 100 fT VCE=10V, IC=50mA 150 Cob VCB=10V, IE=0, f=1.0MHz 80 60 5.0 1.0 2.0 300 1.2 -65 to +150 104 MAX 100 100 UNITS V V V A A mA W °C °C/W 0.175 0.18 0.34 1.1 0.9 UNITS nA nA V V V V V V V V 15 MHz pF R1 (23-February 2010) CXT7820 SURFACE MOUNT VERY LOW VCE(SAT) PNP SILICON TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R1 (23-February 2010) w w w. c e n t r a l s e m i . c o m