Data Sheet Shottky barrier diode RB420D Dimensions (Unit : mm) Applications Low current rectification Land size figure (Unit : mm) Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. ＋0.1 0.15 －0.06 (3) ＋0.2 1.6－0.1 2.8±0.2 0.95 1.0MIN. 2.9±0.2 各リードとも ＋0.1 Each lead has same dimension 同寸法 0.4 －0.05 2.4 1.9 0.8MIN. 0～0.1 (1) 0.95 0.8±0.1 0.95 SMD3 0.3～0.6 (2) Construction Silicon epitaxial planar 0.2 1.1±0.2 1.1 0.1 0.01 1.9±0.2 Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications(Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 3.2±0.1 5.5±0.2 3.5±0.05 Limits 40 40 100 1 125 40 to 125 Symbol VRM VR Io IFSM Tj Tstg 0～0.5 3.2±0.1 Absolute maximum ratings(Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward voltage (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature φ1.05MIN 4.0±0.1 3.2±0.1 8.0±0.2 1.75±0.1 4.0±0.1 1.35±0.1 Unit V V mA A °C °C (*1) Rating of per diode Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Symbol VF1 IR1 Min. - Typ. - Max. 0.45 1 Unit V μA Ct1 - 6 - pF 1/3 Conditions IF=10mA VR=10V VR=10V , f=1MHz 2011.03 - Rev.D Data Sheet RB420D Ta=125℃ 100 100 100 f=1MHz Ta=25℃ Ta=125℃ Ta=-25℃ 1 0.1 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0.001 0.01 0 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 15 20 25 1 30 0 370 360 400 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 380 REVERSE CURRENT:IR(nA) 390 300 200 100 AVE:425.2mV AVE:370.9mV 0 Ta=25℃ f=1MHz VR=10V n=10pcs 25 20 15 10 5 0 IR DISPERSION MAP 20 Ct DISPERSION MAP 8.3ms 10 5 AVE:5.5A 0 15 PEAK SURGE FORWARD CURRENT:IFSM(A) 15 PEAK SURGE FORWARD CURRENT:IFSM(A) 15 1cyc Ifsm 8.3ms 8.3ms 1cyc 10 5 0 Ifsm t 10 5 0 0.1 1 10 100 0.1 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP 1000 30 AVE:5.81pF AVE:98.96nA σ:1.6771mV Ifsm 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 Ta=25℃ VR=10V n=30pcs VF DISPERSION MAP 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 0.003 0.1 Rth(j-a) Rth(j-c) Mounted on epoxy board IM=1mA 10 1ms IF=10mA time FORWARD POWER DISSIPATION:Pf(W) 0.08 100 D=1/2 0.06 REVERSE POWER DISSIPATION:PR (W) PEAK SURGE FORWARD CURRENT:IFSM(A) 10 500 Ta=25℃ Ta=25℃ IF=1A IF=10mA n=30pcs n=10pcs 350 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 5 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 400 FORWARD VOLTAGE:VF(mV) Ta=75℃ 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=75℃ Sin(θ＝180) DC 0.04 0.002 D=1/2 DC 0.001 Sin(θ＝180) 0.02 300us 1 0.001 0.1 10 1000 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 0 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2/3 0.2 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 2011.03 - Rev.D Data Sheet RB420D 0.3 0.3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.25 Io t 0.2 DC 0.15 T VR D=t/T VR=20V Tj=125℃ D=1/2 0.1 0.05 Sin(θ＝180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 125 0A 0V 0.25 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V 0.2 Io t DC 0.15 T VR D=t/T VR=20V Tj=125℃ D=1/2 0.1 0.05 Sin(θ＝180) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 3/3 2011.03 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A