Data Sheet Schottky Barrier Diode RB411D Applications Low current rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.9±0.2 各 リー ドと も ＋0.1 lead 同寸 法 has same dimension 0.4 －0.05 Each Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 1.0MIN. ＋0.2 1.6－0.1 2.8±0.2 0.95 ＋0.1 0.15 －0.06 (3) 2.4 1.9 0.8MIN. (2) (1) 0.95 Construction Silicon epitaxial planer 0.8±0.1 0.95 0.3～0.6 0～ 0.1 SMD3 1.1±0.2 0.01 1.9±0.2 Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 Limits 40 20 500 3 125 40 to 125 Symbol VRM VR Io IFSM Tj Tstg 3.2±0.1 8.0±0.2 0～0.5 3.2±0.1 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz / 1cyc)(*1) Junction temperature Storage temperature φ1.05MIN 4.0±0.1 3.2±0.1 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 1.35±0.1 Unit V V mA A °C °C (*1) Rating of per diode Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Conditions Symbol VF 1 VF 2 IR1 Min. Typ. Max. Unit - - 0.50 0.30 30 V V μA IF=500mA IF=10mA VR=10V Ct1 - 20 - pF VR=10V , f=1MHz 1/3 2011.04 - Rev.B Data Sheet RB411D 1000 10000 Ta=25℃ f=1MHz Ta=125℃ Ta=-25℃ 10 1 1000 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 100 200 300 400 500 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 430 0 30 410 400 AVE:405.6mV σ:3.0258mV 390 AVE:402.4mV 380 230 220 210 AVE:218.0mV 14 12 10 8 6 4 2 IR DISPERSION MAP 30 20 19 18 17 AVE:18.35pF 16 1cyc Ifsm 15 8.3ms 10 5 AVE:5.70A REVERSE RECOVERY TIME:trr(ns) 21 PEAK SURGE FORWARD CURRENT:IFSM(A) 22 15 20 15 10 5 AVE:6.20ns 0 Ct DISPERSION MAP trr DISPERSION MAP IFSM DISRESION MAP 10 Ifsm 8.3ms 8.3ms 1cyc 5 1000 Ifsm TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 15 t 10 5 0 0 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 0 1 AVE:4.67uA 0 20 23 Ta=25℃ VR=10V n=30pcs 16 VF DISPERSION MAP Ta=25℃ f=1MHz VR=0V n=10pcs 24 100 30 18 200 25 20 20 Ta=25℃ IF=10mA n=30pcs 240 VF DISPERSION MAP 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 420 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 250 Ta=25℃ IF=500mA n=30pcs 10 1 0.1 0 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 100 0.1 FORWARD VOLTAGE:VF(mV) 100 Ta=125℃ Ta=75℃ 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 2/3 1000 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=1mA 10 1ms IF=10mA time 300us 1 0.001 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 2011.04 - Rev.B Data Sheet RB411D D=1/2 0.3 Sin(θ＝180) DC 0.2 0.1 0.0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.4 FORWARD POWER DISSIPATION:Pf(W) 1.5 0.2 0.5 0.15 0.1 D=1/2 DC 0.05 Sin(θ＝180) 1 Io t T DC VR D=t/T VR=10V Tj=125℃ D=1/2 0.5 Sin(θ＝180) 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0A 0V 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1.5 0A 0V 1 Io t DC T VR D=t/T VR=10V Tj=125℃ D=1/2 0.5 Sin(θ＝180) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A