Data Sheet Shottky barrier diode RB715W Dimensions (Unit : mm) Land size figure (Unit : mm) 1.0 0.5 0.5 0.3±0.1 0.05 Features 1) Ultra small power mold type. (EMD3) 2) Low IR 3) High reliability. 0.7 1.6± 0.2 0.15±0.05 (3) 0～0.1 0.6 0.1Min (1) 0.6 EMD3 0.55±0.1 0.5 0.5 1.0±0.1 Construction Silicon epitaxial planar 0.7 1.6±0.2 0.8±0.1 0.7 (2) 0.2±0.1 -0.05 1.3 Applications Low current rectification 0.7±0.1 Structure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) Taping specifications (Unit : mm) φ1.55±0.1 φ1.5 0.1 00 2.0±0.05 0.3±0.1 8.0±0.2 0～0.1 1.8±0.2 1.8±0.1 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 φ0.5±0.1 0.9±0.2 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature Limits Symbol VRM VR Io IFSM Tj Tstg Unit V V mA mA °C °C 40 40 30 200 125 40 to 125 (*1) Rating of per diode Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Min. Typ. Max. - - 0.37 V IF=1mA - - 1 μA Ct - 2.0 - pF VR=10V VR=1.0V f=1.0MHz 1/3 Unit Conditions Symbol VF IR 2011.04 - Rev.C Data Sheet RB715W Ta=125℃ Ta=125℃ Ta=75℃ 1 Ta=-25℃ Ta=25℃ 0.1 100 Ta=75℃ 10 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0.001 0.01 0 500 1000 0 1500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 280 270 AVE:267.4mV 0.7 0.6 0.5 0.4 0.3 AVE:0.083nA 0.2 8.3ms 10 5 AVE:7.30A 5 4 3 2 1 0 AVE:2.02pF Ct DISPERSION MAP 10 Ifsm 15 8.3ms 8.3ms 1cyc 10 5 0 1 IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 9 Ifsm 8 t 7 6 5 4 3 2 0 1 Per diode Rth(j-c) 0.03 D=1/2 0.02 Sin(θ＝180) DC 0.01 0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 Per diode REVERSE POWER DISSIPATION:PR (W) Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) IF=10mA time 10 TIME:t(ms) IFSM-t CHARACTERISTICS 0.003 0.04 Mounted on epoxy board 300us 10 0.001 6 1 0 100 7 0 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 15 1ms Ta=25℃ f=1MHz VR=0V n=10pcs 8 0.1 20 Ifsm 30 9 IR DISPERSION MAP 20 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25℃ VR=10V n=30pcs VF DIPERSION MAP IM=1mA 10 10 0.8 250 1000 0 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=1mA n=30pcs 260 1 0.1 30 1 290 10000 20 0.9 REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 10 f=1MHz REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 300 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 10 1000 100 0.002 D=1/2 DC 0.001 Sin(θ＝180) 0 0.00 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS 2/3 0.05 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 2011.04 - Rev.C Data Sheet RB715W 0.1 0.1 0.08 t DC 0.06 T VR D=t/T VR=20V Tj=125℃ D=1/2 0.04 0.02 Per diode Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Per diode 0.06 DC 0.04 D=1/2 0 t T VR D=t/T VR=20V Tj=125℃ Sin(θ＝180) 0.02 Sin(θ＝180) Io 0A 0V 0.08 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 3/3 2011.04 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A