Data Sheet Schottky Barrier Diode RB481Y-90 Dimensions (Unit : mm) Applications Low current rectification Land size figure (Unit : mm) 0.5 0.22±0.05 (3) 1.2±0.1 (4) 1.55 0.13±0.05 Construction Silicon epitaxial planar (1) 0.5 1.6±0.1 1.6±0.05 Features 1) Ultra small mold type. (EMD4) 2) Low VF 3) High reliability 0.45 1.6±0.05 1.6±0.1 1.0 0～0.1 EMD4 (2) Structure 0.5 1.0±0.1 0.5±0.05 ROHM : EMD4 JEITA : SC-75A Size dot (year week factory) Taping specifications (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 1PIN Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature φ0.8±0.1 4.0±0.1 8.0±0.2 1.65±0.01 0～0.1 1.65±0.1 1.65±0.1 1.7±0.05 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 0.65±0.1 Limits 90 90 100 1 125 40 to 125 Symbol VRM VR Io IFSM Tj Tstg Unit V V mA A °C °C (*1) Rating of per diode Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Conditions Symbol VF Min. Typ. Max. - 0.55 0.61 V IF=100mA IR - 20 100 μA VR=90V 1/3 Unit 2011.05 - Rev.C Data Sheet RB481Y-90 10000 Ta=25℃ Ta=-25℃ 1 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 0.01 0 100 200 300 400 500 600 10 20 30 40 50 60 70 80 90 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 580 500 REVERSE CURRENT:IR(uA) 560 550 540 400 300 250 200 150 100 AVE:552.0mV AVE:29.31uA 28 27 25 24 AVE:21.69pF 23 22 21 0 20 IR DISPERSION MAP Ct DISPERSION MAP 30 15 8.3ms 10 5 AVE:3.70A 10 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 AVE:11.7ns 5 9 PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 0 0 Ifsm 8 8.3ms 8.3ms 1cyc 7 6 5 4 3 2 1 0 1 trr DISPERSION MAP IFSM DISRESION MAP 1000 9 Ifsm 8 t 7 6 5 4 3 2 1 0 1 10 TIME:t(s) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0.2 Rth(j-a) Rth(j-c) 100 Mounted on epoxy board IM=10mA 1ms IF=100mA Per diode FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 10 30 26 50 VF DISPERSION MAP 20 25 Ta=25℃ f=1MHz VR=0V n=10pcs 29 350 530 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 Ta=25℃ VR=90V n=30pcs 450 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=0.1A n=30pcs 570 10 1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 10 1000 0.1 PEAK SURGE FORWARD CURRENT:IFSM(A) 100 Ta=125℃ f=1MHz Ta=75℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 100 D=1/2 0.1 Sin(θ＝180) DC time 300us 10 0.001 0 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/3 1000 0 0.05 0.1 0.15 0.2 0.25 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.3 2011.05 - Rev.C Data Sheet RB481Y-90 1 0.3 0.3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.8 0.6 Sin(θ＝180) 0.4 D=1/2 DC 0.2 0.2 D=1/2 0A 0V Io t DC T VR D=t/T VR=45V Tj=125℃ 0.1 Sin(θ＝180) Per diode AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Per diode Per diode Io 0A 0V t DC 0.2 D=1/2 VR D=t/T VR=45V T Tj=125℃ 0.1 Sin(θ＝180) 0 0 0 20 40 60 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 80 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 3/3 125 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 2011.05 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A