SFH614A VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, 300 V BVCEO Features • High Isolation Test Voltage, 5300 VRMS • High Collector-Emitter Voltage, VCEO = 300 V • Standard Plastic DIP-4 Package Agency Approvals • UL File #E52744 System Code H or J • CSA 93751 A 1 4 C C 3 E 2 i179060 Description Order Information The SFH614A features a high collector-emitter voltage and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. Part Remarks SFH614A CTR > 50 %, DIP-4 SFH614A-X009 CTR > 50 %, SMD-4 (option 9) For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter VR 6.0 V DC Forward current IF 60 mA IFSM 2.5 A Surge forward current Test condition t ≤ 10 µs Derate linearly from 25 °C Total power dissipation Unit 1.33 mW/°C Pdiss 100 mW Output Symbol Value Unit Collector-emitter voltage Parameter Test condition VCEO 300 V Emitter-collector voltage VECO 7.0 V IC 50 mA IC 100 mA 2.00 mW/°C 150 mW Collector current t ≤ 1.0 ms Derate linearly from 25 °C Total power dissipation Document Number 83670 Rev. 1.3, 19-Apr-04 Pdiss www.vishay.com 1 SFH614A VISHAY Vishay Semiconductors Coupler Parameter Test condition Symbol Derate linearly from 25 °C Value Unit 3.33 mW/°C Total power dissipation Ptot 250 mW Isolation test voltage between input and output, climate acc. to IEC 60068-1 : 1988 (T = 1.0 s) VISO 5300 VRMS Creepage distance ≥ 7.0 mm Clearance ≥ 7.0 mm Insulation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index acc. to DIN IEC 112/VDE 0303, part 1 : 06-84 ≥ 175 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω ≥ Storage temperature range Tstg - 55 to +150 °C Ambient temperature range Tamb - 55 to +100 °C Tj 100 °C Tsld 260 °C Junction temperature Soldering temperature max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Typ. Max Forward voltage Parameter IF = 10 mA Test condition Symbol VF Min 1.15 1.5 Unit V Reverse current VR = 6.0 V IR 0.02 10 µA Capacitance VR = 0 V, f = 1.0 MHz CO 14 pF Output Symbol Min Collector-emitter breakdown voltage Parameter ICE = 100 µA Test condition BVCEO 300 Typ. Max V Emitter-collector breakdown voltage IEC = 10 µA BVECO 7.0 V Collector-emitter dark current VCE = 10 V ICEO 15 Collector-emitter capacitance VCE = 10 V, f = 1.0 MHz CCE 8.0 1.0 Unit µA pF Coupler Max Unit Collector-emitter saturation voltage Parameter IF = 20 mA, IC = 1.0 mA VCEsat 0.3 V Coupling capacitance VI-O = 0 V, f = 1.0 MHz CC 0.5 V www.vishay.com 2 Test condition Symbol Min Typ. Document Number 83670 Rev. 1.3, 19-Apr-04 SFH614A VISHAY Vishay Semiconductors Current Transfer Ratio Parameter Test condition IF = 10 mA, VCE = 10 V Current Transfer Ratio Symbol Min CTR 50 Symbol Min Typ. Max Unit % Switching Characteristics Parameter Test condition Typ. Max Unit Turn on time VCE = 2.0 V, IC = 2.0 mA, RL = 100 Ω ton 6.0 µs Turn off time VCE = 2.0 V, IC = 2.0 mA, RL = 100 Ω toff 6 µs Rise time VCE = 2.0 V, IC = 2.0 mA, RL = 100 Ω tr 3.0 10 µs Fall time VCE = 2.0 V, IC = 2.0 mA, RL = 100 Ω tf 5.0 12 µs Typical Characteristics (Tamb = 25 °C unless otherwise specified) 25 IF = 20 mA Collector Current, IC (mA) Forward Current, IF (mA) 100.0 10.0 1.0 0.1 .01 0.8 0.9 1.0 1.1 1.2 1.3 1.4 25°C 15 100°C 10 5 0 1.5 0 Forward Voltage, VF (V) 100 200 300 400 500 Collector-Emitter Voltage, VCE (mV) isfh614a_03 isfh614a_01 Fig. 1 Forward Current vs. Forward Voltage Fig. 3 Collector Current vs. Collector Emitter Voltage 10000 7 100°C Collector Current, IC (mA) Collector Current, IC (mA) –40°C 20 1000 100 25°C 10 0°C 1 0 –40°C 6 IF = 10 mA 5 25°C 4 100°C 3 2 1 0 0 50 100 150 200 250 300 350 0 Collector-Emitter Voltage, VCE (mV) isfh614a_02 Fig. 2 Collector-Emitter Dark Current vs. Collector-Emitter Voltage Document Number 83670 Rev. 1.3, 19-Apr-04 100 200 300 400 500 Collector-Emitter Voltage, VCE (mV) isfh614a_04 Fig. 4 Collector Current vs. Collector Emitter Voltage www.vishay.com 3 SFH614A VISHAY Vishay Semiconductors VCC Input Pulse f = 5.0 kHz DF = 50% 10% Output Pulse 90% tr I RL VO =V CE F tf t off ton isfh614a_07 isfh614a_06 Fig. 5 Switching Waveform Fig. 6 Switching Schematic Package Dimensions in Inches (mm) 2 1 pin one ID .255 (6.48) .268 (6.81) ISO Method A 3 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27) typ. .300 (7.62) typ. .130 (3.30) .150 (3.81) 4° typ. i178027 www.vishay.com 4 .018 (.46) .022 (.56) 10° .020 (.508 ) .035 (.89) .050 (1.27) .100 (2.54) 3°–9° .230 (5.84) .250 (6.35) .110 (2.79) .130 (3.30) .008 (.20) .012 (.30) Document Number 83670 Rev. 1.3, 19-Apr-04 SFH614A VISHAY Vishay Semiconductors Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .0040 (.102) .0098 (.249) .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. Document Number 83670 Rev. 1.3, 19-Apr-04 15° max. 18449 www.vishay.com 5 SFH614A VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 83670 Rev. 1.3, 19-Apr-04