DMN2040LTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Case: TSSOP-8L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.039 grams (approximate) • • • • • D1 D2 G1 1 2 3 4 Top View BOTTOM VIEW TOP VIEW 8 7 6 5 D S2 S2 G2 D S1 S1 G1 G2 S1 S2 Internal Schematic Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State Pulsed Drain Current (Note 4) Unit V V IDM Value 20 ±12 6.7 4.9 30 Symbol Value Unit PD 0.89 W RθJA TJ, TSTG 140 -55 to +150 °C/W °C TA = 25°C TA = 70°C ID A A Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. DMN2040LTS Document number: DS31941 Rev. 2 - 2 1 of 6 www.diodes.com October 2009 © Diodes Incorporated DMN2040LTS @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diodes Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS (Note 6) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 20 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.5 - 1.2 V RDS (ON) - 19 26 26 36 mΩ |Yfs| VSD - 8 0.7 1.2 S V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 6.0A VGS = 2.5V, ID = 5.2A VDS = 10V, ID = 6A Is = 1.7A, VGS = 0V Ciss Coss Crss Rg - 570 85 75 1.23 - pF pF pF Ω Qg Qgs Qgd tD(on) tr tD(off) tf - 5.2 0.86 1.25 5.2 13.5 19.8 6.1 - nC nC nC ns ns ns ns VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 7A VDD = 10V, VGS = 4.5V, RL = 1.5Ω, RG = 1Ω 5. Short duration pulse test used to minimize self-heating effects. 6. Guaranteed by design. Not subject to production testing. 20 20 VDS = 5V VGS = 10.0V VGS = 4.5V 16 VGS = 3.0V 15 VGS = 2.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics VGS = 2.0V 12 10 5 8 TA = 150°C TA = 125°C 4 TA = 85°C VGS = 1.5V 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMN2040LTS Document number: DS31941 Rev. 2 - 2 TA = 25°C T A = -55°C 5 0 0 1 2 3 VGS, GATE SOURCE VOLTAGE (V) 4 Fig. 2 Typical Transfer Characteristics 2 of 6 www.diodes.com October 2009 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.1 VGS = 1.8V VGS = 2.5V VGS = 4.5V VGS = 8.0V 0.01 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V 0.04 TA = 150°C TA = 125°C TA = 85°C 0.02 VGS = 4.5V ID = 5A VGS = 10V ID = 10A 1.0 0.8 0.6 -50 TA = 25°C TA = -55°C 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.4 1.2 0.06 20 1.6 4 8 12 16 20 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.06 0.04 VGS = 4.5V ID = 5A VGS = 10V ID = 10A 0.02 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 20 1.6 1.4 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMN2040LTS 1.2 1.0 12 ID = 1mA 0.8 0.6 ID = 250µA 0.4 TA = 25°C 8 4 0.2 0 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMN2040LTS Document number: DS31941 Rev. 2 - 2 3 of 6 www.diodes.com 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 October 2009 © Diodes Incorporated DMN2040LTS 10,000 C, CAPACITANCE (pF) f = 1MHz 600 Ciss 400 200 Coss Crss 0 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance TA = 150°C 1,000 20 TA = 125°C 100 T A = 85°C TA = -55°C 10 TA = 25°C 1 0 4 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 800 IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 1,000 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA R θJA = 133°C/W D = 0.02 0.01 D = 0.01 P(pk) t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 Ordering Information 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 10 100 1,000 (Note 7) Part Number DMN2040LTS-13 Notes: t1 Case TSSOP-8L Packaging 2500 / Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 8 5 Logo N2040L Part no YY WW Xth week : 01~52 Year: “09” = 2009 1 4 Top View DMN2040LTS Document number: DS31941 Rev. 2 - 2 4 of 6 www.diodes.com October 2009 © Diodes Incorporated DMN2040LTS Package Outline Dimensions NEW PRODUCT D See Detail C E E1 e c b Gauge plane a A2 A L D A1 TSSOP-8L Dim Min Max Typ a 0.09 − − A 1.20 − − A1 0.05 0.15 − A2 0.825 1.025 0.925 b 0.19 0.30 − c 0.09 0.20 − D 2.90 3.10 3.025 e 0.65 − − E 6.40 − − E1 4.30 4.50 4.425 L 0.45 0.75 0.60 All Dimensions in mm Detail C Suggested Pad Layout Dimensions Value (in mm) X 0.45 Y 1.78 C1 7.72 C2 0.65 C3 4.16 G 0.20 Y X C3 C1 C2 DMN2040LTS Document number: DS31941 Rev. 2 - 2 G 5 of 6 www.diodes.com October 2009 © Diodes Incorporated DMN2040LTS IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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