DMG3420U NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) Drain D Gate TOP VIEW Maximum Ratings S G Source Internal Schematic TOP VIEW @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State Units V V IDM Value 20 ±12 5.47 3.43 20 Symbol PD RθJA TJ, TSTG Value 0.74 167 -55 to +150 Unit W °C/W °C TA = 25°C TA = 85°C ID Pulsed Drain Current (Note 4) A A Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. DMG3420U Document number: DS31867 Rev. 2 - 2 1 of 6 www.diodes.com January 2010 © Diodes Incorporated DMG3420U @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.5 RDS (ON) - |Yfs| VSD - 1.2 29 35 48 91 1.0 V Static Drain-Source On-Resistance 0.95 21 25 34 65 9 0.75 VDS = VGS, ID = 250μA VGS = 10V, ID = 6A VGS = 4.5V, ID = 5A VGS = 2.5V, ID = 4A VGS = 1.8V, ID = 2A VDS = 5V, ID = 3.8A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 434.7 69.1 61.2 1.53 5.4 0.9 1.5 6.5 8.3 21.6 5.3 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC ns ns ns ns Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 6A VDD = 10V, VGS = 5V, RL = 1.7Ω, RG = 6Ω 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 20 20 VDS = 5V VGS = 10V VGS = 4.5V 15 ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics VGS = 3.5V VGS = 3.0V VGS = 2.5V 10 VGS = 2.0V VGS = 1.8V 5 15 10 T A = 150°C 5 TA = 125°C TA = 85°C VGS = 1.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMG3420U Document number: DS31867 Rev. 2 - 2 5 0 TA = 25°C T A = -55°C 0 1 2 3 VGS, GATE SOURCE VOLTAGE (V) 4 Fig. 2 Typical Transfer Characteristics 2 of 6 www.diodes.com January 2010 © Diodes Incorporated 0.06 0.04 VGS = 2.5V VGS = 4.5V 0.02 0 5 10 15 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V 0.06 1.5 1.3 1.1 VGS = 4.5V ID = 10A 0.9 VGS = 2.5V ID = 5A 0.5 -50 T A = 150°C 0.04 TA = 125°C TA = 85°C TA = 25°C 0.02 TA = -55°C 0 20 1.7 0.7 0.08 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.08 0 0 5 10 15 20 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.06 0.05 0.04 VGS = 2.5V ID = 5A 0.03 VGS = 4.5V ID = 10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 20 1.6 1.4 16 1.2 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG3420U ID = 1mA 1.0 ID = 250µA 0.8 0.6 0.4 TA = 25°C 12 8 4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG3420U Document number: DS31867 Rev. 2 - 2 3 of 6 www.diodes.com 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.4 January 2010 © Diodes Incorporated DMG3420U IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 1,000 f = 1MHz C, CAPACITANCE (pF) 100 C oss Crss 10 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance T A = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = 25°C 1 0 20 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 162°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 t1 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t1 /t2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 11 Transient Thermal Response Ordering Information (Note 7) Part Number DMG3420U-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information G31 Date Code Key Year Code Month Code 2009 W Jan 1 2010 X Feb 2 DMG3420U Document number: DS31867 Rev. 2 - 2 Mar 3 YM NEW PRODUCT Ciss 10,000 G31 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2011 Y Apr 4 May 5 2012 Z Jun 6 4 of 6 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D January 2010 © Diodes Incorporated DMG3420U Package Outline Dimensions NEW PRODUCT A SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm B C H K M K1 D F J L G Suggested Pad Layout Y Z C X DMG3420U Document number: DS31867 Rev. 2 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com January 2010 © Diodes Incorporated DMG3420U IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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