DMG6402LDM N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • Low RDS(ON) Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 2) • • • • Case: SOT-26 Case Material - Molded Plastic. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 2 Ordering Information: See page 2 Weight: 0.008 grams (approximate) SOT-26 D D S D D G TOP VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State TA = 25°C TA = 70°C Pulsed Drain Current (Note 4) Unit V V IDM Value 30 ±20 5.3 4.2 31 Symbol PD RθJA TJ, TSTG Value 1.12 111 -55 to +150 Unit W °C/W °C ID A A Thermal Characteristics Characteristic Total Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient TA = 25°C (Note 3) Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive Rating, pulse width limited by junction temperature. DMG6402LDM Document number: DS31839 Rev. 3 - 2 1 of 6 www.diodes.com July 2009 © Diodes Incorporated DMG6402LDM @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 30 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.0 1.5 2.0 V RDS (ON) - 22 32 27 40 mΩ |Yfs| VSD - 10 0.75 1.0 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 7A VGS = 4.5V, ID = 5.6A VDS = 5V, ID = 7A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 404 52 45 1.51 9.2 1.2 1.8 3.41 6.18 13.92 2.84 - pF pF pF Ω nC nC nC ns ns ns ns VDS =15V, VGS = 0V, f = 1.0MHz VDS =0V, VGS = 0V, f = 1MHz VGS =10V, VDS = 15V, ID =5.8A VDD = 15V, VGS = 10V, RL = 2.6Ω, RG = 3Ω 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 30 20 VGS = 8.0V VGS = 4.5V VGS = 4.0V 20 15 VDS = 5V 16 ID, DRAIN CURRENT (A) 25 ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics VGS = 3.5V 10 VGS = 3.0V 12 8 TA = 150°C TA = 125°C 4 5 T A = 85°C VGS = 2.8V T A = 25°C TA = -55°C VGS = 2.5V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMG6402LDM Document number: DS31839 Rev. 3 - 2 0 2 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE SOURCE VOLTAGE (V) 4 Fig. 2 Typical Transfer Characteristics 2 of 6 www.diodes.com July 2009 © Diodes Incorporated 0.07 0.06 0.05 0.04 VGS = 4.5V 0.03 VGS = 8.0V 0.02 0.01 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage TA = 150°C 0.06 T A = 125°C VGS = 4.5V ID = 5A VGS = 10V ID = 10A 0.9 0.7 0.5 -50 TA = 85°C 0.04 T A = 25°C TA = -55°C 0.02 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.5 1.1 VGS = 4.5V 30 1.7 1.3 0.08 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.08 0 4 8 12 16 20 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.08 0.07 0.06 0.05 VGS = 4.5V ID = 5A 0.04 0.03 VGS = 10V ID = 10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 20 2.0 18 ID = 1mA 1.6 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG6402LDM ID = 250µA 1.2 0.8 0.4 16 14 12 10 T A = 25°C 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG6402LDM Document number: DS31839 Rev. 3 - 2 3 of 6 www.diodes.com 0 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current July 2009 © Diodes Incorporated DMG6402LDM IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) NEW PRODUCT C, CAPACITANCE (pF) 1,000 C iss 100 Coss Crss f = 1MHz 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 10,000 30 TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 T A = 25°C 1 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 120°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t1 /t2 D = Single Pulse 0.001 0.00001 t1 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 11 Transient Thermal Response Ordering Information (Note 7) Part Number DMG6402LDM-7 Notes: Case SOT-26 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM Marking Information 34N Date Code Key Year Code Month Code 2008 V Jan 1 DMG6402LDM Document number: DS31839 Rev. 3 - 2 2009 W Feb 2 Mar 3 34N= Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2010 X Apr 4 2011 Y May 5 Jun 6 4 of 6 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D July 2009 © Diodes Incorporated DMG6402LDM Package Outline Dimensions NEW PRODUCT A B C H K M J L D SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm Suggested Pad Layout E Z E Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C G C E Y 2.40 0.95 X DMG6402LDM Document number: DS31839 Rev. 3 - 2 5 of 6 www.diodes.com July 2009 © Diodes Incorporated DMG6402LDM IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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