DIODES DMG8822UTS-13

DMG8822UTS
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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NEW PRODUCT
Features
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Mechanical Data
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Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 3)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
Case: TSSOP-8L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram Below
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.039 grams (approximate)
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D1
D2
G1
1
2
3
4
Top View
BOTTOM VIEW
TOP VIEW
8
7
6
5
D
S2
S2
G2
D
S1
S1
G1
G2
S1
S2
Internal Schematic
Pin Configuration
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Steady
State
Pulsed Drain Current (Note 2)
Unit
V
V
IDM
Value
20
±8
4.9
3.9
31
Symbol
Value
Unit
PD
0.87
W
RθJA
TJ, TSTG
143
-55 to +150
°C/W
°C
TA = 25°C
TA = 70°C
ID
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB with minimum recommended pad layout.
2. Repetitive rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
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June 2009
© Diodes Incorporated
DMG8822UTS
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
-
-
1.0
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
0.5
-
0.9
V
Static Drain-Source On-Resistance
RDS (ON)
-
19
22
28
25
29
37
mΩ
|Yfs|
VSD
-
7
0.7
0.9
S
V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 8.2A
VGS = 2.5V, ID = 3.3A
VGS = 1.8V, ID = 2.0A
VDS = 10V, ID = 4A
Is = 2.25A, VGS = 0V
Ciss
Coss
Crss
Rg
-
841
88
81
1.24
-
pF
pF
pF
Ω
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
9.6
1.4
2.1
7.8
21.1
38.6
10.1
-
nC
nC
nC
ns
ns
ns
ns
Forward Transfer Admittance
Diodes Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Test Condition
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS =0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 10V,
ID = 8.2A
VDD = 10V, VGS = 4.5V,
RL = 10Ω, RG = 6Ω
5. Short duration pulse test used to minimize self-heating effects.
6. Guaranteed by design. Not subject to production testing.
20
30
VGS = 4.5V
VGS = 2.0V
VGS = 3.5V
VGS = 3.0V
VGS = 2.8V
20
VGS = 2.5V
10
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
NEW PRODUCT
Electrical Characteristics
VGS = 1.8V
VGS = 1.5V
VDS = 5V
15
10
TA = 150°C
5
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
0
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
0
2
0.5
1
1.5
2
2.5
VGS, GATE SOURCE VOLTAGE (V)
3
Fig. 2 Typical Transfer Characteristics
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0.04
VGS = 1.8V
0.03
VGS = 2.5V
0.02
VGS = 4.5V
0.01
0
VGS = 4.5V
0.04
TA = 150°C
0.03
T A = 125°C
TA = 85°C
0.02
T A = 25°C
T A = -55°C
0.01
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
1.5
1.3
VGS = 2.5V
ID = 5A
1.1
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.7
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.05
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.05
0
VGS = 4.5V
ID = 10A
0.9
0.7
0.5
-50
5
10
15
20
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.04
0.03
VGS = 2.5V
ID = 5A
0.02
VGS = 4.5V
ID = 10A
0.01
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
20
1.2
18
1.0
16
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
DMG8822UTS
0.8
ID = 1mA
0.6
ID = 250µA
0.4
14
12
T A = 25°C
10
8
6
4
0.2
2
0
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
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0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
June 2009
© Diodes Incorporated
DMG8822UTS
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
10,000
C, CAPACITANCE (pF)
1,000
Ciss
Coss
100
Crss
10
0
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
10,000
TA = 150°C
1,000
20
TA = 125°C
100
TA = 85°C
10
TA = 25°C
1
2
4
6
8
10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
f = 1MHz
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 141°C/W
D = 0.02
0.01
D = 0.01
P(pk)
D = 0.005
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 /t2
D = Single Pulse
0.001
0.00001
0.0001
t1
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
10
100
1,000
Fig. 11 Transient Thermal Response
Ordering Information
(Note 7)
Part Number
DMG8822UTS-13
Notes:
Case
TSSOP-8L
Packaging
2500 / Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
5
8
Logo
N8822U
YY WW
Part no
Xth week : 01~52
Year: “09” = 2009
1
4
Top View
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
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June 2009
© Diodes Incorporated
DMG8822UTS
Package Outline Dimensions
NEW PRODUCT
D
See Detail C
E
E1
e
c
b
Gauge plane
a
A2
A
TSSOP-8L
Dim Min Max Typ
a
0.09
−
−
A
1.20
−
−
A1 0.05 0.15
−
A2 0.825 1.025 0.925
b
0.19 0.30
−
c
0.09 0.20
−
D
2.90 3.10 3.025
e
0.65
−
−
E
6.40
−
−
E1 4.30 4.50 4.425
L
0.45 0.75 0.60
All Dimensions in mm
L
D
A1
Detail C
Suggested Pad Layout
Y
Dimensions Value (in mm)
X
0.45
Y
1.78
C1
7.72
C2
0.65
C3
4.16
G
0.20
X
C3
C1
C2
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
G
5 of 6
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June 2009
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DMG8822UTS
IMPORTANT NOTICE
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
6 of 6
www.diodes.com
June 2009
© Diodes Incorporated