DMG8822UTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability Case: TSSOP-8L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Below Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.039 grams (approximate) • • • • • D1 D2 G1 1 2 3 4 Top View BOTTOM VIEW TOP VIEW 8 7 6 5 D S2 S2 G2 D S1 S1 G1 G2 S1 S2 Internal Schematic Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Steady State Pulsed Drain Current (Note 2) Unit V V IDM Value 20 ±8 4.9 3.9 31 Symbol Value Unit PD 0.87 W RθJA TJ, TSTG 143 -55 to +150 °C/W °C TA = 25°C TA = 70°C ID A A Thermal Characteristics Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient @TA = 25°C Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB with minimum recommended pad layout. 2. Repetitive rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMG8822UTS Document number: DS31798 Rev. 2 - 2 1 of 6 www.diodes.com June 2009 © Diodes Incorporated DMG8822UTS @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) 0.5 - 0.9 V Static Drain-Source On-Resistance RDS (ON) - 19 22 28 25 29 37 mΩ |Yfs| VSD - 7 0.7 0.9 S V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 8.2A VGS = 2.5V, ID = 3.3A VGS = 1.8V, ID = 2.0A VDS = 10V, ID = 4A Is = 2.25A, VGS = 0V Ciss Coss Crss Rg - 841 88 81 1.24 - pF pF pF Ω Qg Qgs Qgd tD(on) tr tD(off) tf - 9.6 1.4 2.1 7.8 21.1 38.6 10.1 - nC nC nC ns ns ns ns Forward Transfer Admittance Diodes Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS =0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 8.2A VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω 5. Short duration pulse test used to minimize self-heating effects. 6. Guaranteed by design. Not subject to production testing. 20 30 VGS = 4.5V VGS = 2.0V VGS = 3.5V VGS = 3.0V VGS = 2.8V 20 VGS = 2.5V 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics VGS = 1.8V VGS = 1.5V VDS = 5V 15 10 TA = 150°C 5 TA = 125°C TA = 85°C TA = 25°C TA = -55°C 0 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMG8822UTS Document number: DS31798 Rev. 2 - 2 0 2 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) 3 Fig. 2 Typical Transfer Characteristics 2 of 6 www.diodes.com June 2009 © Diodes Incorporated 0.04 VGS = 1.8V 0.03 VGS = 2.5V 0.02 VGS = 4.5V 0.01 0 VGS = 4.5V 0.04 TA = 150°C 0.03 T A = 125°C TA = 85°C 0.02 T A = 25°C T A = -55°C 0.01 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 1.5 1.3 VGS = 2.5V ID = 5A 1.1 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.7 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.05 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 0 VGS = 4.5V ID = 10A 0.9 0.7 0.5 -50 5 10 15 20 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.04 0.03 VGS = 2.5V ID = 5A 0.02 VGS = 4.5V ID = 10A 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 20 1.2 18 1.0 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG8822UTS 0.8 ID = 1mA 0.6 ID = 250µA 0.4 14 12 T A = 25°C 10 8 6 4 0.2 2 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG8822UTS Document number: DS31798 Rev. 2 - 2 3 of 6 www.diodes.com 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 June 2009 © Diodes Incorporated DMG8822UTS IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 10,000 C, CAPACITANCE (pF) 1,000 Ciss Coss 100 Crss 10 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 10,000 TA = 150°C 1,000 20 TA = 125°C 100 TA = 85°C 10 TA = 25°C 1 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT f = 1MHz D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 141°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 /t2 D = Single Pulse 0.001 0.00001 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 11 Transient Thermal Response Ordering Information (Note 7) Part Number DMG8822UTS-13 Notes: Case TSSOP-8L Packaging 2500 / Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 5 8 Logo N8822U YY WW Part no Xth week : 01~52 Year: “09” = 2009 1 4 Top View DMG8822UTS Document number: DS31798 Rev. 2 - 2 4 of 6 www.diodes.com June 2009 © Diodes Incorporated DMG8822UTS Package Outline Dimensions NEW PRODUCT D See Detail C E E1 e c b Gauge plane a A2 A TSSOP-8L Dim Min Max Typ a 0.09 − − A 1.20 − − A1 0.05 0.15 − A2 0.825 1.025 0.925 b 0.19 0.30 − c 0.09 0.20 − D 2.90 3.10 3.025 e 0.65 − − E 6.40 − − E1 4.30 4.50 4.425 L 0.45 0.75 0.60 All Dimensions in mm L D A1 Detail C Suggested Pad Layout Y Dimensions Value (in mm) X 0.45 Y 1.78 C1 7.72 C2 0.65 C3 4.16 G 0.20 X C3 C1 C2 DMG8822UTS Document number: DS31798 Rev. 2 - 2 G 5 of 6 www.diodes.com June 2009 © Diodes Incorporated DMG8822UTS IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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