DMN2016UTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) ESD Protected Up To 2KV "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • Case: TSSOP-8L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.039 grams (approximate) D1 D2 TSSOP-8L G1 1 2 3 4 TOP VIEW ESD PROTECTED TO 2kV Maximum Ratings BOTTOM VIEW D S1 S1 G1 D S2 S2 G2 8 7 6 5 G2 S1 Top View Pin Configuration S2 Internal Schematic @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Unit V V IDM Value 20 ±8 8.58 5.73 36 Characteristic Power Dissipation (Note 3) Symbol Value Unit PD 0.88 W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) Operating and Storage Temperature Range RθJA TJ, TSTG 141.57 -55 to +150 °C/W °C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State TA = 25°C TA = 85°C Pulsed Drain Current (Note 4) ID A A Thermal Characteristics Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. DMN2016UTS Document number: DS31995 Rev. 1 - 2 1 of 6 www.diodes.com December 2009 © Diodes Incorporated DMN2016UTS @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 20 - - 1.0 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) 0.4 0.72 1.0 V RDS (ON) - 11 13 14.5 16.5 mΩ |Yfs| VSD - 19 0.65 1.2 S V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 9.4A VGS = 2.5V, ID = 8.3A VDS = 5V, ID = 9.4A VGS = 0V, IS = 1.3A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 1495 161 152 1.42 16.5 2.5 3.2 10.39 11.66 59.38 16.27 - pF pF pF Ω nC nC nC ns ns ns ns VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 9.4A VDD = 10V, VGS = 4.5V, RGEN = 6Ω, ID = 1A, R1 = 10Ω 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 30 30 VGS = 4.5V 25 VDS = 5V 25 ID, DRAIN CURRENT (A) VGS = 3.0V ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics VGS = 2.5V 20 VGS = 2.0V VGS = 1.5V 15 VGS = 1.5V 10 20 15 10 TA = 150°C T A = 125°C 5 5 VGS = 1.2V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMN2016UTS Document number: DS31995 Rev. 1 - 2 0 2 TA = 85°C TA = 25°C TA = -55°C 0 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) 3 Fig. 2 Typical Transfer Characteristics 2 of 6 www.diodes.com December 2009 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.06 0.05 0.04 0.03 VGS = 1.8V 0.02 VGS = 4.5V VGS = 10V 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V 0.03 0.02 VGS = 4.5V ID = 5A VGS = 8.0V ID = 10A 1.0 0.8 0.6 -50 TA = 85°C T A = -55°C 0 VGS = 4.5V ID = 5A 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature IS, SOURCE CURRENT (A) 16 0 -50 12 8 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Document number: DS31995 Rev. 1 - 2 TA = 25°C 4 0.4 DMN2016UTS VGS = 8.0V ID = 10A 0.01 1.6 ID = 250µA 10 15 20 25 30 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.02 20 ID = 1mA 5 0.03 2.0 0.8 T A = 25°C 0.01 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 1.2 TA = 150°C TA = 125°C 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.4 1.2 0.04 30 1.6 VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMN2016UTS 3 of 6 www.diodes.com 0 0.4 0.6 0.8 1.0 1.2 0.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current December 2009 © Diodes Incorporated DMN2016UTS IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 10,000 C, CAPACITANCE (pF) Ciss 1,000 Coss Crss 100 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 100,000 10,000 20 T A = 150°C 1,000 T A = 125°C 100 TA = 85°C 10 TA = 25°C 1 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT f = 1MHz D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 136°C/W D = 0.02 0.01 D = 0.01 P(pk) D = Single Pulse 0.001 0.00001 Ordering Information 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 10 100 1,000 (Note 7) Part Number DMN2016UTS-13 Notes: t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 Case TSSOP-8L Packaging 2500 / Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 8 5 Logo N2016U Part no YY WW Xth week : 01~52 Year: “09” = 2009 1 4 Top View DMN2016UTS Document number: DS31995 Rev. 1 - 2 4 of 6 www.diodes.com December 2009 © Diodes Incorporated DMN2016UTS Package Outline Dimensions NEW PRODUCT D See Detail C E E1 e c b Gauge plane a A2 A L D A1 TSSOP-8L Dim Min Max Typ a 0.09 − − A 1.20 − − A1 0.05 0.15 − A2 0.825 1.025 0.925 b 0.19 0.30 − c 0.09 0.20 − D 2.90 3.10 3.025 e 0.65 − − E 6.40 − − E1 4.30 4.50 4.425 L 0.45 0.75 0.60 All Dimensions in mm Detail C Suggested Pad Layout Dimensions Value (in mm) X 0.45 Y 1.78 C1 7.72 C2 0.65 C3 4.16 G 0.20 Y X C3 C1 C2 DMN2016UTS Document number: DS31995 Rev. 1 - 2 G 5 of 6 www.diodes.com December 2009 © Diodes Incorporated DMN2016UTS IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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