VISHAY DG3408

DG3408, DG3409
Vishay Siliconix
Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers
DESCRIPTION
FEATURES
The DG3408, DG3409 uses BiCMOS wafer fabrication
technology that allows the DG3408/3409 to operate on single and dual supplies. Single supply voltage ranges from 3
to 12 V while dual supply operation is recommended with
± 3 to ± 6 V.
• 2.7 V to 12 V single supply or ± 3 to ± 6 V
dual supply operation
• Low on-resistance - RON: 3.9  typ.
• Fast switching: tON - 42 ns, tOFF - 24 ns
• Break-before-make guaranteed
• Low leakage
• TTL, CMOS, LV logic (3 V) compatible
• 2000 V ESD protection (HBM)
• MICRO FOOT® package
• Lead (Pb)-free solder bumps
The DG3408 is an 8-channel single-ended analog
multiplexer designed to connect one of eight inputs to a
common output as determined by a 3-bit binary address
(A0, A1, A2). The DG3409 is a dual 4-channel differential
analog multiplexer designed to connect one of four
differential inputs to a common dual output as determined by
its 2-bit binary address (A0, A1). Break-before-make
switching action to protect against momentary crosstalk
between adjacent channels.
BENEFITS
•
•
•
•
High accuracy
Single and dual power rail capacity
Wide operating voltage range
Simple logic interface
APPLICATIONS
•
•
•
•
•
•
•
Data acquisition systems
Battery operated equipment
Portable test equipment
Sample and hold circuits
Communication systems
SDSL, DSLAM
Audio and video signal routing
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG3409
DG3408
V+
V+
V-
XXX
3408
S1
A1 Locator
MICRO FOOT 16-Bump
A1 Locator
MICRO FOOT 16-Bump
V-
XXX
3409
S1A
S2A
S2
Device Marking: 3408
xxx = Data/Lot Traceabiliity Code
S3
S4
1
S5
2
3
4
S4A
A
S5
D
A2
S1
B
S6
V-
GND
S2
C
S7
EN
V+
S3
D
S8
A1
A0
S4
S2B
S3B
S7
S8
Decoder/Driver
A2 A1 A0 EN
GND
Top View
Document Number: 72858
S11-0303-Rev. E, 28-Feb-11
Device Marking: 3409
xxx = Data/Lot Traceabiliity Code
DA
1
2
3
4
A
S1A
DA
DB
S1B
B
S2A
V-
GND
S2B
C
S3A
EN
V+
S3B
D
S4A
A1
A0
S4B
S1B
D
S6
S3A
DB
S4B
Decoder/Driver
A1 A0 EN
GND
Top View
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DG3408, DG3409
Vishay Siliconix
TRUTH TABLE (DG3408)
TRUTH TABLE (DG3409)
A2
A1
A0
EN
On Switch
A1
A0
EN
On Switch
X
X
X
1
None
X
X
1
None
0
0
0
0
1
0
0
0
1
0
0
1
0
2
0
1
0
2
0
1
0
0
3
1
0
0
3
0
1
1
0
4
1
1
0
4
1
0
0
0
5
X = Do not care
1
0
1
0
6
1
1
0
0
7
1
1
1
0
8
For low and high voltage levels for VAX and VEN consult “Digital Control” Parameters for Specific V+ operation. See Specifications
Tables for:
Single Supply 12 V
Dual Supply V+ = 5 V, V- = - 5 V
Single Supply 5 V
Single Supply 3 V
ORDERING INFORMATION (DG3408)
ORDERING INFORMATION (DG3409)
Temperature
Range
Package
Part Number
Temperature
Range
Package
Part Number
- 40 °C to 85 °C
MICRO FOOT: 16-Bump
(4 x 4, 0.5 mm Pitch,
238 µm Bump Height)
DG3408DB-T2-E1
(Lead (Pb)-free)
- 40 °C to 85 °C
MICRO FOOT: 16-Bump
(4 x 4, 0.5 mm Pitch,
238 µm Bump Height)
DG3409DB-T2-E1
(Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Limit
Voltage Referenced V+ to VGND
7
Digital Inputsa, VS, VD
30
Continuous Current, S or D)
100
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max).
200
IR/Convection
Storage Temperature
Power Dissipation (Package)c, (TA = 70 °C)
V
(V-) - 0.3 V to (V) + 0.3 V
Current (Any Terminal Except S or D)
Package Solder Reflow Conditionsb
Unit
14
mA
250
- 65 to 150
16-Bump (4 x 4 mm) MICRO FOOTd
719
°C
mW
Notes:
a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. Refer to IPC/JEDEC (J-STD-020B).
c. All bumps soldered or welded to PC board.
d. Derate 9.0 mW/°C above 70 °C.
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Document Number: 72858
S11-0303-Rev. E, 28-Feb-11
DG3408, DG3409
Vishay Siliconix
SPECIFICATIONS (Single Supply 12 V)
Test Conditions
Unless Otherwise Specified
V+ = 12 V, ± 10 %, V- = 0 V
Parameter
Symbol
VA, VEN = 0.8 V or 2.4 Vf
Limits
- 40 °C to 85 °C
Temp.b
Min.c
Full
0
Typ.d
Max.c
Unit
12
V
Analog Switch
Analog Signal Rangee
On-Resistance
RON Match Between Channelsg
On-Resistance Flatnessi
VANALOG
RON
V+ = 10.8 V, VD = 2 V or 9 V, IS = 50 mA
Sequence Each Switch On
RON
RON
Flatness
V+ = 10.8 V, VD = 2 V or 9 V, IS = 50 mA
IS(off)
VEN = 2.4 V, VD = 11 V or 1 V, VS = 1 V or 11 V
Switch Off Leakage Current
ID(off)
Channel On Leakage Current
ID(on)
VEN = 0 V, VS = VD = 1 V or 11 V
Room
Full
4
7
7.5
Room
3.6
Room
8
Room
Full
-2
- 20
2
20
Room
Full
-2
- 20
2
20
Room
Full
-2
- 20
2
20
2.4

nA
Digital Control
Logic High Input Voltage
VINH
Full
Logic Low Input Voltage
VINL
Full
Input Current
IIN
VAX = VEN = 2.4 V or 0.8 V
Full
tTRANS
VS1 = 8 V, VS8 = 0 V, (DG3408)
VS1b = 8 V, VS4b = 0 V, (DG3409)
see figure 2
Room
Full
tBBM
VS(all) = VDA = 5 V
see figure 4
Room
Full
0.8
-1
1
V
µA
Dynamic Characteristics
Transition Time
Break-Before-Make Time
Enable Turn-On Time
tON(EN)
Enable Turn-Off Time
tOFF(EN)
VAX = 0 V, VS1 = 5 V (DG3408)
VAX = 0 V, VS1b = 5 V (DG3409)
see figure 3
Charge Injectione
Q
CL = 1 nF, VGEN = 0 V, RGEN = 0 
Isolatione, h
OIRR
Off
Crosstalke
XTALK
Source Off Capacitancee
CS(off)
Drain Off Capacitancee
CD(off)
f = 1 MHz, VD = 0 V, VEN = 2.4 V
Drain On Capacitancee
CD(on)
f = 1 MHz, VD = 0 V, VEN = 0 V
2
71
75
24
ns
Room
Full
42
70
75
Room
Full
24
44
46
Room
29
Room
- 80
Room
- 85
DG3408
Room
21
DG3409
Room
23
DG3408
Room
211
DG3409
Room
112
DG3408
Room
238
DG3409
Room
137
f = 100 kHz, RL = 1 k
f = 1 MHz, VS = 0 V, VEN = 2.4 V
42
pC
dB
pF
Power Supplies
Power Supply Current
Document Number: 72858
S11-0303-Rev. E, 28-Feb-11
I+
VEN = VA = 0 V or V+
Room
1.0
µA
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DG3408, DG3409
Vishay Siliconix
SPECIFICATIONS (Dual Supply V+ = 5 V, V- = - 5 V)
Test Conditions
Unless Otherwise Specified
V+ = 5 V, V- = - 5 V, ± 10 %
Parameter
Symbol
VA, VEN = 0.8 V or 2.0 Vf
Limits
- 40 °C to 85 °C
Temp.b
Min.c
Full
-5
Typ.d
Max.c
Unit
5
V
Analog Switch
Analog Signal Rangee
VANALOG
RON
On-Resistance
rON Match Between Channelsg
On-Resistance Flatnessi
RON
RON
Flatness
IS(off)
Switch Off Leakage Currenta
ID(off)
Channel On Leakage Currenta
V+ = 4.5 V, V- = - 4.5 V, VD = ± 3.5 V, IS = 50 mA,
sequence each switch on
ID(on)
V+ = 4.5 V, V- = - 4.5 V, VD = ± 3.5 V, IS = 50 mA
V+ = 5.5, V- = - 5.5 V
VEN = 2.4 V, VD = ± 4.5 V, VS = ± 4.5 V
V+ = 5.5 V, V- = - 5.5 V
VEN = 0 V, VD = ± 4.5 V, VS = ± 4.5 V
Room
Full
5
8
8.5
Room
3.6
Room
8.2
Room
Full
-2
- 20
2
20
Room
Full
-2
- 20
2
20
Room
Full
-2
- 20
2
20
2.0

nA
Digital Control
Logic High Input Voltage
VINH
Full
Logic Low Input Voltage
VINL
Full
Input Currenta
IIN
VAX = VEN = 2.0 V or 0.8 V
Full
tTRANS
VS1 = 3.5 V, VS8 = - 3.5 V, (DG3408)
VS1b = 3.5 V, VS4b = - 3.5 V, (DG3409)
see figure 2
Room
Full
tBBM
VS(all) = VDA = 3.5 V
see figure 4
Room
Full
0.8
-1
1
V
µA
Dynamic Characteristics
e
Transition Time
Break-Before-Make Timee
Enable Turn-On Timee
tON(EN)
Enable Turn-Off Timee
tOFF(EN)
Source Off Capacitancee
CS(off)
Drain Off Capacitancee
CD(off)
f = 1 MHz, VD = 0 V, VEN = 2.0 V
Drain On Capacitancee
CD(on)
f = 1 MHz, VD = 0 V, VEN = 0 V
1
89
94
16
ns
Room
Full
68
88
94
Room
Full
58
78
81
DG3408
Room
23
DG3409
Room
23
DG3408
Room
223
DG3409
Room
113
DG3408
Room
246
DG3409
Room
137
VAX = 0 V, VS1 = 3.5 V (DG3408)
VAX = 0 V, VS1b = 3.5 V (DG3409)
see figure 3
f = 1 MHz, VS = 0 V, VEN = 2.0 V
68
pF
Power Supplies
Power Supply Current
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I+
I-
VEN = VA = 0 V or V+
Room
Room
1.0
- 1.0
µA
Document Number: 72858
S11-0303-Rev. E, 28-Feb-11
DG3408, DG3409
Vishay Siliconix
SPECIFICATIONS (Single Supply 5 V)
Test Conditions
Unless Otherwise Specified
V+ = 5 V, ± 10 %, V- = 0 V
Parameter
Symbol
VA, VEN = 0.8 V or 2.0 Vf
Limits
- 40 °C to 85 °C
Temp.b
Min.c
Full
0
Typ.d
Max.c
Unit
5
V
Analog Switch
Analog Signal Rangee
VANALOG
RON
On-Resistance
rON Match Between Channelsg
RON
RON
Flatness
On-Resistance Flatnessi
IS(off)
Switch Off Leakage Current
a
ID(off)
Channel On Leakage Currenta
V+ = 4.5 V, VD or VS = 1 V or 3.5 V, IS = 50 mA
ID(on)
V+ = 4.5 V, VD = 1 V or 3.5 V, IS = 50 mA
V+ = 5.5 V
VS = 1 V or 4 V, VD = 4 V or 1 V
V+ = 5.5 V
VD = VS = 1 V or 4 V, sequence each switch on
Room
Full
7
10.5
11
Room
3.6
Room
9
Room
Full
-2
- 20
2
20
Room
Full
-2
- 20
2
20
Room
Full
-2
- 20
2
20
Full
2.0

nA
Digital Control
Logic High Input Voltage
VINH
Logic Low Input Voltage
VINL
Input Currenta
V+ = 5 V
Full
IIN
VAX = VEN = 2.0 V or 0.8 V
Full
Transition Timee
tTRANS
VS1 = 3.5 V, VS8 = 0 V, (DG3408)
VS1b = 3.5 V, VS4b = 0 V, (DG3409)
see figure 2
Room
Full
Break-Before-Make Timee
tOPEN
VS(all) = VDA = 3.5 V
see figure 4
Room
Full
Enable Turn-On Timee
tON(EN)
Enable Turn-Off Timee
tOFF(EN)
VAX = 0 V, VS1 = 3.5 V (DG3408)
VAX = 0 V, VS1b = 3.5 V (DG3409)
see figure 3
Charge Injectione
Q
CL = 1 nF, RGEN = 0 , VGEN = 0 V
Isolatione, h
OIRR
0.8
-1
1
V
µA
Dynamic Characteristics
Off
Crosstalke
XTALK
Source Off Capacitancee
CS(off)
Drain Off Capacitancee
CD(off)
f = 1 MHz, VD = 0 V, VEN = 2.0 V
Drain On Capacitancee
CD(on)
f = 1 MHz, VD = 0 V, VEN = 0 V
2
94
104
29
ns
Room
Full
74
94
104
Room
Full
38
57
61
Room
20
Room
- 81
Room
- 85
DG3408
Room
22
DG3409
Room
24
DG3408
Room
223
DG3409
Room
113
DG3408
Room
244
DG3409
Room
143
RL = 1 k, f = 100 kHz
f = 1 MHz, VS = 0 V, VEN = 0 V
73
pC
dB
pF
Power Supplies
Power Supply Current
Document Number: 72858
S11-0303-Rev. E, 28-Feb-11
I+
VEN = VA = 0 V or V+
Room
1.0
µA
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DG3408, DG3409
Vishay Siliconix
SPECIFICATIONS (Single Supply 3 V)
Parameter
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %, V- = 0 V
VEN = 0.4 V or 1.8 Vf
Tempb
Minc
VANALOG
Full
0
RON
V+ = 2.7 V, VD = 0.5 or 2.2 V, IS = 5 mA
Room
Full
Symbol
Limits
- 40 °C to 85 °C
Typd
Maxc
Unit
3
V
12
25.5
26.5
Analog Switch
Analog Signal Rangee
On-Resistance
RON Match Between
Channelsg
On-Resistance Flatnessi
RON
RON
Flatness
IS(off)
Switch Off Leakage
Currenta
ID(off)
Channel On Leakage Currenta
ID(on)
Room
3.6
Room
13

V+ = ± 2.7 V, VD = 0.5 V or 2.2 V, IS = 5 mA
V+ = 3.3 V
VS = 2 or 1 V, VD = 1 or 2 V
V+ = 3.3 V
VD = VS = 1 or 2 V, sequence each switch on
Room
Full
-2
- 20
2
20
Room
Full
-2
- 20
2
20
Room
Full
-2
- 20
2
20
1.8
nA
Digital Control
Logic High Input Voltage
VINH
Full
Logic Low Input Voltage
VINL
Full
Input Currenta
Dynamic Characteristics
Transition Time
Break-Before-Make Time
IIN
VAX = VEN = 1.8 V or 0.4 V
Full
tTRANS
VS1 = 1.5 V, VS8 = 0 V, (DG3408)
VS1b = 1.5 V, VS4b = 0 V, (DG3409)
see figure 2
Room
Full
tBBM
VS(all) = VDA = 1.5 V
see figure 4
Room
Full
Enable Turn-On Time
tON(EN)
Enable Turn-Off Time
tOFF(EN)
VAX = 0 V, VS1 = 1.5 V (DG3408)
VAX = 0 V, VS1b = 1.5 V (DG3409)
see figure 3
Q
CL = 1 nF, RGEN = 0, VGEN = 0 V
Charge Injectione
Off Isolation
e, h
OIRR
XTALK
Source Off Capacitancee
CS(off)
f = 1 MHz, VS = 0 V, VEN = 1.8 V
Drain Off Capacitancee
CD(off)
f = 1 MHz, VD = 0 V, VEN = 1.8 V
Drain On Capacitancee
CD(on)
f = 1 MHz, VD = 0 V, VEN = 0 V
-1
1
140
2
V
µA
165
182
63
ns
Room
Full
140
162
178
Room
Full
76
97
104
Room
7
Room
- 81
Room
- 85
DG3408
Room
23
DG3409
Room
25
DG3408
Room
230
DG3409
Room
120
DG3408
Room
256
DG3409
Room
147
f = 100 kHz, RL = 1 k
Crosstalke
0.4
pC
dB
pF
Power Supplies
Power Supply Current
I+
VEN = VA = 0 V or V+
Room
1.0
µA
Notes:
a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. RDON = RDON Max - RDON Min.
h. Worst case isolation occurs on Channel 4 due to proximity to the drain pin.
i. RDON flatness is measured as the difference between the minimum and maximum measured values across a defined Analog signal.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72858
S11-0303-Rev. E, 28-Feb-11
DG3408, DG3409
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
16
16
T = 25 °C
14
12
R ON - On-Resistance ()
RON - On-Resistance ()
14
V+ = 3.0 V
IS = 5 mA
10
8
V+ = 5.0 V
IS = 50 mA
6
V+ = 12.0 V
IS = 50 mA
4
2
12
A
10
V+ = 5.0 V
IS = 50 mA
B
C
8
A
B
6
V+ = 12.0 V
IS = 50 mA
A
C
4
B
C
2
0
0
0
3
6
9
12
0
2
4
VCOM - Analog Voltage (V)
6
8
10
12
VCOM - Analog Voltage (V)
RON vs. VCOM and Single Supply Voltage
RON vs. Analog Voltage and Temperature
12
10000
V± = ± 5 V
IS = 50 mA
10
A = 85 °C
B = 25 °C
C = - 40 °C
VAX, V EN = 0 V
1000
I+ - Supply Current (pA)
R ON - On-Resistance ()
A = 85 °C
B = 25 °C
C = - 40 °C
V+ = 3.0 V
IS = 5 mA
8
6
A
B
C
4
V+ = 12 V
V- = 0 V
100
V+ = 5 V
V- = - 5 V
10
2
0
-5
-3
-1
1
3
1
- 60
5
- 40
- 20
0
VCOM - Analog Voltage (V)
40
60
80
100
Temperature (°C)
RON vs. Analog Voltage and Temperature
Supply Current vs. Temperature
100
20
INO(off)/INC(off)
INO(off)/INC(off)
0
Leakage Current (pA)
0
Leakage Current (pA)
20
- 100
ICOM(off)
- 200
ICOM(on)
- 300
V+ = 12 V
V- = 0 V
- 400
- 20
ICOM(off)
- 40
ICOM(on)
- 60
- 80
V+ = 5 V
V- = - 5 V
- 100
- 500
- 120
0
2
4
6
8
10
12
-5
-3
-1
1
3
VCOM, V NO, V NC - Analog Voltage
VCOM, V NO, V NC - Analog Voltage
Leakage Current vs. Analog Voltage
Leakage Current vs. Analog Voltage
Document Number: 72858
S11-0303-Rev. E, 28-Feb-11
5
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DG3408, DG3409
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
160
180
tTRANS- V+ = 3 V
tON V+ = 3 V
140
150
tTRANS+ V+ = 3 V
Transistion Time (ns)
120
100
tOFF V+ = 3 V
80
tON V+ = 5 V
60
tON V+ = 12 V
40
tOFF V+ = 5 V
20
120
tTRANS- V+ = 5 V
90
tTRANS+ V+ = 5 V
60
tTRANS- V+ = 12 V
30
tTRANS+ V+ = 12 V
tOFF V+ = 12 V
0
- 60
- 40
- 20
0
20
40
60
80
0
- 60
100
- 40
- 20
0
Temperature (°C)
40
60
80
100
Temperature (°C)
Switching Time vs. Temperature
and Single Supply Voltage
Transition Time vs. Temperature and
Single Supply Voltage
10 000
3.0
V T - Switching Threshold (V)
V+ = 5 V
V- = - 5 V
1000
Leakage Current (pA)
20
INO(off), INC(off)
100
ICOM(on)
10
2.5
2.0
1.5
1.0
0.5
ICOM(off)
1
0.0
- 60
- 40
- 20
0
20
40
60
80
100
2
4
6
Temperature (°C)
12
14
Switching Threshold vs. Supply Voltage
10
10
0
0
Insertion Loss
Insertion Loss
- 10
Loss, OIRR, XTALK (dB)
Loss, OIRR, XTALK (dB)
10
V+ - Supply Voltage (V)
Leakage Current vs. Temperature
- 20
- 30
OIRR
- 40
- 50
- 60
Crosstalk
V+ = 12 V
V- = 0 V
RL = 50 
- 70
- 80
- 10
- 20
- 30
OIRR
- 40
- 50
- 60
Crosstalk
V+ = 12 V
V- = 0 V
RL = 50 
- 70
- 80
- 90
- 90
100 K
1M
10 M
100 M
1G
Frequency (Hz)
Insertion Loss, Off Isolation and Crosstalk
vs. Frequency (DG3408)
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8
100 K
1M
10 M
100 M
1G
Frequency (Hz)
Insertion Loss, Off Isolation and Crosstalk
vs. Frequency (DG3409)
Document Number: 72858
S11-0303-Rev. E, 28-Feb-11
DG3408, DG3409
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 m
V+ = 5 V
V- = - 5 V
I+ - Supply Current (A)
10 m
1m
100 
10 
1
100 n
10 n
1n
10
100
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
Supply Current vs. Input Switching Frequency
SCHEMATIC DIAGRAM (Typical Channel)
V+
D
A0
V+
Level
Shift
AX
Decode/
Drive
V-
S1
V+
EN
Sn
GND
V-
Figure 1.
Document Number: 72858
S11-0303-Rev. E, 28-Feb-11
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9
DG3408, DG3409
Vishay Siliconix
TEST CIRCUITS
V+
V+
A2
S1
A1
50 
Logic
Input
S2 - S7
A0
DG3408
S8
VS8
VAX
GND
3V
50 %
0V
VO
D
EN
tr < 5 ns
tf < 5 ns
VS1
V-
VS1
35 pF
300 
90 %
Switch
Output
V-
VO
50 %
V+
90 %
VS8
V+
A1
A0
tTRANS
VS1b
S1b
S1 ON
S1a - S4a, Da
50 
DG3409 S4b
EN
GND
VS4b
VO
Db
V-
S8 ON (DG3408)
or
S4 ON (DG3409)
tTRANS
Return to Specifications:
Single Supply 12 V
35 pF
300 
Dual Supply V+ = 5 V, V- = - 5 V
Single Supply 5 V
V-
Single Supply 3 V
Figure 2. Transition Time
V+
V+
S1
EN
VS1
S2 - S8
A0
DG3408
A1
A2
GND
VO
D
V-
50 
Logic
Input
50 %
0V
35 pF
300 
tr < 5 ns
tf < 5 ns
3V
tOFF(EN)
V-
tON(EN)
0V
90 %
V+
Switch
Output
VO
V+
S1b
EN
A0
A1
GND
90 %
VS1
VO
S1a - S4a, Da
S2b S4b
Return to Specifications:
DG3409
Db
V-
50 
300 
Single Supply 12 V
VO
35 pF
Dual Supply V+ = 5 V, V- = - 5 V
Single Supply 5 V
Single Supply 3 V
V-
Figure 3. Enable Switching Time
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Document Number: 72858
S11-0303-Rev. E, 28-Feb-11
DG3408, DG3409
Vishay Siliconix
TEST CIRCUITS
V+
50 %
VS1
All S and Da
tr < 5 ns
tf < 5 ns
3V
Logic
Input
EN
0V
A0
DG3408
DG3409
A1
A2
Db, D
GND
VO
VS
V-
50 
V-
90 %
Switch
Output
300 
35 pF
VO
tOPEN
0V
Return to Specifications:
Single Supply 12 V
Dual Supply V+ = 5 V, V- = - 5 V
Single Supply 5 V
Single Supply 3 V
Figure 4. Break-Before-Make Interval
V+
Rg
V+
SX
EN
Vg
ON
OFF
VO
D
A1
CL
1 nF
A2
GND
OFF
0V
A0
Channel
Select
3V
Logic
Input
VO
Switch
Output
V-
VO is the measured voltage due to charge transfer
error Q, when the channel turns off.
V-
Q = CL x VO
Figure 5. Charge Injection
V+
VIN
Rg = 50 
V+
SX
EN
S8
A0
D
VOUT
A1
A2
GND
V-
RL
50 
VOff Isolation = 20 log
VOUT
VIN
Figure 6. Off Isolation
Document Number: 72858
S11-0303-Rev. E, 28-Feb-11
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11
DG3408, DG3409
Vishay Siliconix
TEST CIRCUITS
V+
V+
S1
SX
VIN
RIN
50 
S8
A0
Rg = 50 
VOUT
D
A1
A2
GND
EN
RL
50 
V-
V-
VOUT
Crosstalk = 20 log
VIN
Figure 7. Crosstalk
V+
VIN
V+
S1
Rg = 50 
A0
D
VOUT
A1
A2
GND
V-
EN
RL
50 
V-
VOUT
Insertion Loss = 20 log
VIN
Figure 8. Insertion Loss
V+
V+
S1
Meter
A2
Channel
Select
S8
A1
A0
HP4192A
Impedance
Analyzer
or Equivalent
D
GND
EN
V-
f = 1 MHz
V-
Figure 9. Source Drain Capacitance
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12
Document Number: 72858
S11-0303-Rev. E, 28-Feb-11
DG3408, DG3409
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT: 16-BUMP (4 x 4, 0.5 mm PITCH, 0.238 mm BUMP HEIGHT)
6 X Ø 0.150 ~ 0.229
Note b
Solder Mask Ø ~ Pad Diameter + 0.1
Silicon
A2
A
A1
0.5
Bump
Note a
4
3
2
1
b Diameter
0.5
A
Recommended Land Pattern
e
Index-Bump A1
Note c
B
e
E
C
XXX
3408
e
D
S
Top Side (Die Back)
S
e
e
e
D
Notes (Unless Otherwise Specified):
a. Bump is Lead Free Sn/Ag/Cu.
b. Non-solder mask defined copper landing pad.
c. Laser Mark on silicon die back; back-lapped, no coating. Shown is not actual marking; sample only.
Millimetersa
Inches
Dim.
Min.
Max.
Min.
Max.
A
0.688
0.753
0.0271
0.0296
A1
0.218
0.258
0.0086
0.0102
A2
0.470
0.495
0.0185
0.0195
b
0.306
0.346
0.0120
0.0136
D
1.980
2.020
0.0780
0.0795
E
1.980
2.020
0.0780
0.0795
0.270
0.0091
e
S
0.5 BASIC
0.230
0.0197 BASIC
0.0106
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72858.
Document Number: 72858
S11-0303-Rev. E, 28-Feb-11
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13
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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