DG441L, DG442L Vishay Siliconix Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches DESCRIPTION FEATURES The DG441L, DG442L are low voltage pin-for-pin compatible companion devices to the industry standard DG441L, DG442L with improved performance. • Halogen-free according to IEC 61249-2-21 Definition • 2.7 V thru 12 V single supply or ± 3 V thru ± 6 V dual supply Using BiCMOS wafer fabrication technology allows the DG441L, DG442L to operate on single and dual supplies. Single supply voltage ranges from 3 V to 12 V while dual supply operation is recommended with ± 3 V to ± 6 V. • On-resistance - RDS(on): 17 • Fast switching - tON: 20 ns - tOFF: 12 ns • TTL, CMOS compatible • Low leakage: 0.25 nA • 2000 V ESD protection • Compliant to RoHS Directive 2002/95/EC Combining high speed (tON: 20 ns), flat RDS(on) over the analog signal range (5 ), minimal insertion lose (- 3 dB at 280 MHz), and excellent crosstalk and off-isolation performance (- 50 dB at 50 MHz), the DG441L, DG442L are ideally suited for audio and video signal switching. BENEFITS The DG441L, DG442L responds to opposite control logic as shown in the Truth Table open and two normally closed switches. • • • • Widest dynamic range Low signal errors and distortion Break-before-make switching action Simple interfacing APPLICATIONS • • • • • • • Precision automatic test equipment Precision data acquisition Communication systems Battery powered systems Computer peripherals SDSL, DSLAM Audio and video signal routing FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION Dual-In-Line, TSSOP and SOIC TRUTH TABLE IN1 16 1 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ Logic DG441L DG442L 0 On Off 1 Off On Logic "0" 0.8 V Logic "1" 2.4 V ORDERING INFORMATION Temp. Range GND 5 DG441L/442L 12 NC Top View S4 D4 6 7 16-pin TSSOP - 40 °C to 85 °C 11 10 Package S3 D3 16-pin narrow SOIC 16-pin CerDIP - 55 °C to 125 °C IN4 8 Document Number: 71399 S11-1066–Rev. E, 30-May-11 9 IN3 LCC-20 Part Number DG441LDQ-T1-E3 DG442LDQ-T1-E3 DG441LDY-T1-E3 DG442LDY-T1-E3 DG441LAK, DG441LAK/883 DG442LAK, DG442LAK/883 DG441LAZ/883 DG442LAZ/883 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441L, DG442L Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol V + to V GND to V - A Limit Unit - 0.3 to 13 7 GND - 0.3 to (V +) + 0.3 or 30 mA, whichever occurs first 30 100 Digital Inputsa VS, VD Continuous Current (any terminal) Current, S or D (pulsed 1 ms, 10 % duty cycle) Storage Temperature (DQ, DY suffix) - 65 to 125 (AK suffix) - 65 to 150 16-pin TSSOPc Power Dissipation (Packages) b 16-pin narrow Body V mA °C 450 SOICd mW 650 16-pin CerDIPe 900 Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 7 mW/°C above 75 °C d. Derate 7.6 mW/°C above 75 °C e. Derate 12 mW/°C above 75 °C. SPECIFICATIONSa (Single Supply 12 V) Parameter Symbol Test Conditions Unless Otherwise Specified V + = 12 V, V - = 0 V VIN = 2.4 V, 0.8 Vf A Suffix Limits D Suffix Limits - 55 °C to 125 °C - 40 °C to 85 °C Temp.b Typ.c Min.d Max.d Min.d Max.d 0 12 0 12 Unit Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance On-Resistance Match Between Channelse Full RDS(on) V + = 10.8 V, V - = 0 V IS = 10 mA, VD = 2/9 V Room Full 20 30 45 30 40 RDS(on) IS = 10 mA, VD = 9 V Room 0.1 0.5 0.5 IS(off) VD = 1/11 V, VS = 11/1 V Switch Off Leakage Current ID(off) Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 -1 - 15 1 15 -1 - 10 1 10 - 1.5 1.5 -1 1 - 1.5 1.5 -1 1 ID(on) VS = VD = 11/1 V Room Full Input Current, VIN Low IIL VIN Under Test = 0.8 V Full Input Current, VIN High IIH VIN Under Test = 2.4 V Full Channel On Leakage Current V nA Digital Control 0.01 µA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Charge Injectione Q Off Isolatione OIRR Channel-to-Channel Crosstalke XTALK Source Off Capacitancee CS(off) e CD(off) Drain Off Capacitance e Channel On Capacitance RL = 300 , CL = 35 pF VS = 5 V, see figure 2 Vg = 0 V, Rg = 0 , CL = 10 nF RL = 50 , CL = 5 pF , f = 1 MHz f = 1 MHz Room Full 20 60 80 60 70 Room Full 12 35 50 35 45 Room 5 Room 71 Room 95 Room 5 pC dB Room 6 Room 15 I+ Full 0.03 I- Room Full 0.002 -1 - 7.5 -1 -5 Full 0.002 - 1.5 -1 CD(on) ns pF Power Supplies Positive Supply Current Negative Supply Current Ground Current www.vishay.com 2 IGND VIN = 0 V or 12 V 1.5 1 µA Document Number: 71399 S11-1066–Rev. E, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441L, DG442L Vishay Siliconix SPECIFICATIONSa (Dual Supply ± 5 V) Parameter Test Conditions Unless Otherwise Specified V + = 5 V, V - = - 5 V VIN = 2.4 V, 0.8 Vf Temp.b RDS(on) V + = 5 V, V - = - 5 V IS = 10 mA, VD = ± 3.5 V Room Full 20 33 45 33 40 RDS(on) IS = 10 mA, VD = ± 3.5 V Room 0.1 0.5 0.5 Symbol A Suffix Limits D Suffix Limits - 55 °C to 125 °C - 40 °C to 85 °C Typ.c Min.d Max.d Min.d 5 -5 Unit Max.d Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance On-Resistance Match Between Channelse IS(off) Switch Off Leakage Currentg ID(off) Channel On Full V + = 5.5 , V - = - 5.5 V VD = ± 4.5 V, VS = ± 4.5 V -5 5 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 -1 - 15 1 15 -1 - 10 1 10 ID(on) V + = 5.5 V, V - = - 5.5 V VS = VD = ± 4.5 V Room Full IIL VIN Under Test = 0.8 V Full 0.05 - 1.5 1.5 -1 1 IIH VIN Under Test = 2.4 V Full 0.05 - 1.5 1.5 -1 1 Turn-On Time tON Room Full 21 60 83 60 70 Turn-Off Time tOFF RL = 300 , CL = 35 pF VS = ± 3.5 V, see figure 2 Room Full 16 35 55 35 45 Room 5 Room 68 Room 85 Room 9 Leakage Currentg V nA Digital Control Input Current, VIN Lowe Input Current, VIN High e µA Dynamic Characteristics Charge Injectione Off Isolation Q e OIRR Channel-to-Channel Crosstalke XTALK Source Off Capacitancee Drain Off Capacitance Vg = 0 V, Rg = 0 , CL = 10 nF CS(off) e Channel On Capacitance RL = 50 , CL = 5 pF , f = 1 MHz CD(off) e f = 1 MHz CD(on) Room 9 Room 20 ns pC dB pF Power Supplies Positive Supply Currente Negative Supply Currente Ground Currente Document Number: 71399 S11-1066–Rev. E, 30-May-11 I+ Full 0.002 - Room Full - 0.002 -1 - 7.5 -1 -5 Full - 0.002 - 1.5 -1 IGND VIN = 0 V or 5 V 1.5 1 µA www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441L, DG442L Vishay Siliconix SPECIFICATIONSa (Single Supply 5 V) Test Conditions Unless Otherwise Specified V + = 5 V, V - = 0 V VIN = 2.4 V, 0.8 Vf Temp.b 5 5 RDS(on) V + = 4.5 V IS = 5 mA, VD = 1 V, 3.5 V Room Full 35 50 88 50 75 RDS(on) IS = 10 mA, VD = 3.5 V Room 0.5 1 1 Turn-On Timee tON Room Hot 27 50 90 50 60 Turn-Off Timee tOFF RL = 300 , CL = 35 pF VS = 3.5 V, see figure 2 Room Hot 15 30 55 30 40 Vg = 0 V, Rg = 0 , CL = 10 nF Room 0.5 I+ Full 10 I- VIN = 0 V or 5 V Room Full - 0.002 -1 - 7.5 -1 -5 Full - 10 - 200 - 100 Parameter Symbol A Suffix Limits D Suffix Limits - 55 °C to 125 °C - 40 °C to 85 °C Typ.c Min.d Max.d Min.d Unit Max.d Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistancee On-Resistance Match Between Channelse Full V Dynamic Characteristics Charge Injectione Q ns pC Power Supplies Positive Supply Currente e Negative Supply Current Ground Currente www.vishay.com 4 IGND 200 100 µA Document Number: 71399 S11-1066–Rev. E, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441L, DG442L Vishay Siliconix SPECIFICATIONSa (Single Supply 3 V) Parameter Test Conditions Unless Otherwise Specified V + = 3 V, V - = 0 V VIN = 0.4 Vf Temp.b RDS(on) V + = 2.7 V, V - = 0 V IS = 5 mA, VD = 0.5, 2.2 V Room Full 65 80 115 80 100 RDS(on) IS = 5 mA, VD = 2.2 V Room 1 3 3 Symbol A Suffix Limits D Suffix Limits - 55 °C to 125 °C - 40 °C to 85 °C Typ.c Min.d Max.d Min.d 3 0 Unit Max.d Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance On-Resistance Match Between Channelse IS(off) Switch Off Leakage Currentg ID(off) Channel On Full V + = 3.3 , V - = 0 V VD = 1, 2 V, VS = 2, 1 V 0 3 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 -1 - 15 1 15 -1 - 10 1 10 ID(on) V + = 3.3 V, V - = 0 V VS = VD = 1, 2 V Room Full IIL VIN under test = 0.4 V Full 0.005 - 1.5 1.5 -1 1 IIH VIN under test = 2.4 V Full 0.005 - 1.5 1.5 -1 1 Turn-On Time tON Room Full 50 136 175 136 151 Turn-Off Time tOFF RL = 300 , CL = 35 pF VS = 1.5 V, see figure 2 Room Full 30 100 140 100 125 Room 1 Room 68 Room 85 Room 6 Leakage Currentg V nA Digital Control Input Current, VIN Lowe Input Current, VIN High e µA Dynamic Characteristics Charge Injectione Off Isolation Q e OIRR Channel-to-Channel Crosstalke XTALK Source Off Capacitancee Drain Off Capacitance Vg = 0 V, Rg = 0 , CL = 10 nF CS(off) e Channel On Capacitance RL = 50 , CL = 5 pF , f = 1 MHz CD(off) e CD(on) f = 1 MHz Room 6 Room 20 ns pC dB pF Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 71399 S11-1066–Rev. E, 30-May-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441L, DG442L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 100 R DS(on) – On-Resistance () RDS(on) – On-Resistance () V+ = 5 V V- = 0 V 80 VCC = 2.7 V 60 40 VCC = 4.5 V VCC = 12 V 20 40 A 30 C B D 20 A =125 °C B = 85 °C C = 25 °C D = - 40 °C E = - 55 °C 10 0 0 0 3 6 9 12 0 1 3 4 5 Drain Voltage (V) RDS(on) vs. Drain Voltage (Single Supply) RDS(on) vs. Drain Voltage and Temperature (Single Supply) 30 V+ = 5 V V- = - 5 V V±=±5V 28 A B 21 C D E 14 A = 125 °C B = 85 °C C = 25 °C D = - 40 °C E = - 55 °C 7 I S , I D Leakage Current (pA) 20 RDS(on) – On-Resistance () 2 Drain Voltage (V) 35 -5 -3 10 ID(on) 0 ID(off) IS(off) - 10 - 20 - 30 0 -1 1 3 -5 5 -3 -1 1 3 5 VD or V S – Drain-Source Voltage Drain Voltage (V) RDS(on) vs. Drain Voltage and Temperature (Dual Supply) Leakage Current vs. Analog Voltage (Dual Supply) 45 50 36 Switching Speed (nS) 40 Switching Speed (nS) E tON 30 20 tOFF tON tOFF 27 18 9 10 0 0 0 3 6 9 12 V ± Positive Supply Voltage (V) Switching Time vs. Single Supply www.vishay.com 6 15 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 V ± Positive Supply voltage (V) Switching Time vs. Dual Supply Document Number: 71399 S11-1066–Rev. E, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441L, DG442L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 6 Charge Injection (Q) 4 VSUPPLY = ± 5 V 2 VSUPPLY = 3 V 0 -2 -5 -3 -1 1 3 5 Drain Voltage (V) 1.8 7 1.5 6 Capacitance (pF) V TH – Threshold (V) Charge Injection vs. Drain Voltage 1.2 0.9 0.6 CD(off) at VCC = 5 V CD(off) at VCC = 12 V 5 CD(off) at VCC = 3 V 4 3 2 0.3 1 0.0 0 0 2 4 6 8 10 12 0 14 3 Input Threshold vs. Single Supply Voltage 9 12 Drain Capacitance vs. Drain Voltage (Single Supply) 25 10 VSUPPLY = ± 5 V CD(on) - 10 20 - 30 Loss (dB) Capacitance (pF) 6 VD – Drain Voltage (V) V ± Positive Supply Voltage (V) 15 - 50 V+ = 3 V V- = 0 V RL = 50 Insertion Loss - 3 dB = 280 MHz Off Isolation 10 - 70 Crosstalk CS/CD(off) 5 - 90 0 -5 -3 -1 1 3 Analog Voltage (V) Capacitance vs. Analog Signal (Dual Supply) Document Number: 71399 S11-1066–Rev. E, 30-May-11 5 - 110 0.1 1 10 100 1000 Frequency (MHz) Insertion Loss, Off Isolation and Crosstalk vs. Frequency (Single Supply) www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441L, DG442L Vishay Siliconix SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ 5 V Reg S V- Level Shift/ Drive INX V+ GND D V- Figure 1. TEST CIRCUITS V+ Logic Input V+ S VS IN VO RL 1 k GND tr < 20 ns tf < 20 ns 50 % 50 % 0V D 3V 3V CL 35 pF tOFF Switch Input VS Switch Output 0V VO 80 % 80 % V- VCL (includes fixture and stray capacitance) Note: tON Logic input waveform is inverted for DG442. Figure 2. Switching Time V+ V O Rg VO V+ S D IN OFF ON OFF (DG441) CL 1 nF 3V GND INX VO VINX OFF ON Q = VO x CL OFF (DG442) V- Figure 3. Charge Injection www.vishay.com 8 Document Number: 71399 S11-1066–Rev. E, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441L, DG442L Vishay Siliconix TEST CIRCUITS C = 1 µF tantalum in parallel with 0.01 µF ceramic V+ C V+ S1 VS Rg = 50 D1 50 IN1 0 V, 2.4 V VO D2 S2 NC RL IN2 0 V, 2.4 V GND V- C VVS XTA LK Isolation = 20 log C = RF bypass VO Figure 4. Crosstalk V+ C V+ S VS VO D Rg = 50 0 V, 2.4 V RL IN GND V- C VOff Isolation = 20 log VS VO Figure 5. Off Isolation V+ C S V+ Meter IN HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V D GND V- C V- Figure 6. Source/Drain Capacitances Document Number: 71399 S11-1066–Rev. E, 30-May-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441L, DG442L Vishay Siliconix APPLICATIONS + 24 V + 12 V RL DG442L V+ I = 3A 150 + 12 V VN0300L, M + 12 V IN VIN 10 k 1/4 DG442L S + + 12 V D VOUT - CH + - GND VIN 0V 0 = Load Off 1 = Load On Figure 8. Open Loop Sample-and-Hold Figure 7. Power MOSFET Driver VIN H = Sample L = Hold + - VOUT + 12 V Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit. V+ GAIN1 AV = 1 R1 90 k GAIN2 A V = 10 R2 5 k With SW4 Closed VOUT VIN GAIN3 A V = 20 R3 4 k GAIN4 A V = 100 R4 1 k = R1 + R2 + R3 + R4 = 100 R4 DG441L or DG442L V- GND V Figure 9. Precision-Weighted Resistor Programmable-Gain Amplifier Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71399. www.vishay.com 10 Document Number: 71399 S11-1066–Rev. E, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information Vishay Siliconix TSSOP: 16-LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A - 1.10 1.20 A1 0.05 0.10 0.15 A2 - 1.00 1.05 0.38 B 0.22 0.28 C - 0.127 - D 4.90 5.00 5.10 E 6.10 6.40 6.70 E1 4.30 4.40 4.50 e - 0.65 - L 0.50 0.60 0.70 L1 0.90 1.00 1.10 y - - 0.10 θ1 0° 3° 6° ECN: S-61920-Rev. D, 23-Oct-06 DWG: 5624 Document Number: 74417 23-Oct-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. 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