Phototransistors PNZ158 (PN158) Silicon planar type For optical control systems Unit: mm 2.9±0.25 (1.2) 4.5±0.3 ■ Features 3.9±0.3 1.7±0.2 (0.9) 12.8 min. 2-1.2±0.3 ■ Absolute Maximum Ratings Ta = 25°C 0.45±0.15 2-0.45±0.15 1 Parameter Symbol Rating Unit Collector-emitter voltage (Base open) VCEO 20 V Emitter-collector voltage (Base open) VECO 5 V Collector current IC 20 mA Collector power dissipation PC 100 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −30 to +100 °C (0.8) 2.8 (2.4) (1.5) • High sensitivity • Fast response: tr = 4 µs (typ.) • Wide spectral sensitivity characteristics, suited for detecting various kinds of LEDs • Small size, thin side-view type package Not soldered (φ2.4) 2 2.54 (R1.2) (2-R0.6) 1: Emitter 2: Collector LSTLR102-002 Package ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Photocurrent *1 ICE(L) VCE = 10 V, L = 500 lx Dark current Min Typ 1.0 4.0 Max Unit µA ICEO VCE = 10 V 0.01 Peak sensitivity wavelength λp VCE = 10 V 800 nm Half-power angle θ The angle from which photocurrent becomes 50% 40 ° Rise time *2 tr VCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω Fall time *2 tf Collector-emitter saturation voltage *1 VCE(sat) ICE(L) = 1 mA, L = 1 000 lx 1.00 µA 4 10 µs 4 10 µs 0.2 0.5 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Source: Tungsten (color temperature 2 856 K) *2: Switching time measurement circuit Sig. in VCC (Input pulse) 50 Ω Sig. out RL 90% 10% (Output pulse) tr tr: Rise time tf: Fall time tf Note) The part number in the parenthesis shows conventional part number. Publication date: November 2004 SHE00022CED 1 PNZ158 PC Ta ICE(L) VCE 20 100 60 40 1 750 lx 1 500 lx 12 VCE = 10 V Ta = 25°C T = 2 856 K 10 L = 2 000 lx 1 250 lx 1 000 lx 8 750 lx 500 lx 4 Photocurrent ICE(L) (mA) 80 1 10−1 10−2 20 250 lx 0 0 20 40 60 80 100 100 lx 0 4 8 ICE(L) Ta 500 lx 40 80 VCE = 10 V 10−2 0 103 40 20 60 40 20 0 200 120 400 40° 50° 60° 600 800 1 000 1 200 Wavelength λ (nm) tf ICE(L) 103 VCC = 10 V Ta = 25°C 102 30° Rise time tr (µs) 60 Relative sensitivity ∆S (%) 100 80 80 80 tr ICE(L) 20° 104 VCE = 10 V Ta = 25°C Ambient temperature Ta (°C) Directivity characteristics 10° 40 103 Spectral sensitivity characteristics 10−1 10−3 −40 120 102 10 1 Illuminance L (lx) 100 1 Ambient temperature Ta (°C) 0° 10−3 24 Relative sensitivity ∆S (%) Dark current ICEO (µA) 10 0 20 ICEO Ta 10 VCE = 10 V T = 2 856 K L = 1 000 lx 1 −40 16 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 102 12 VCC = 10 V Ta = 25°C 102 RL = 1 kΩ 500 Ω 10 100 Ω 1 Fall time tf (µs) 0 −20 Photocurrent ICE(L) (mA) ICE(L) L 102 Ta = 25°C T = 2 856 K 16 Photocurrent ICE(L) (mA) Collector power dissipation PC (mW) 120 RL = 1 kΩ 500 Ω 10 100 Ω 1 70° 80° 10−1 10−1 90° 10−2 −2 10 10−1 1 10 Photocurrent ICE(L) (mA) 2 SHE00022CED 102 10−2 −2 10 10−1 1 10 Photocurrent ICE(L) (mA) 102 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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