Transmissive Photosensors (Photo lnterrupters) CNA1014H (ON1387) Photo Interrupter For contactless SW, object detection Unit: mm ■ Overview ■ Features (4.5) 2±0.2 4.15±0.1 0.45±0.1 (2.95) 1.5 6.5 2 φ1.5±0.05 4-0.45±0.15 4-0.45±0.15 1.23 (2.54) Rating VR 3 Unit V emitting diode) Forward current IF 50 mA PD 75 mW Output (Photo Collector-emitter voltage transistor) (Base open) VCEO 30 V Emitter-collector voltage (Base open) VECO 5 V Collector current IC 20 mA Collector power dissipation *2 PC 100 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −40 to +100 °C 3 (φ2) 4 1: Anode 2: Cathode 3: Collector 4: Emitter PISTR104-025 Package (Note) 1. Tolerance unless otherwise specified is ±0.3 2. ( ) Dimension is reference 1 Symbol Temperature A' SEC. A-A' Reverse voltage Power dissipation *1 0.5±0.1 (C1) (7.6) ■ Adsolute Maximum Ratings Ta = 25°C Parameter 5.0 Device Center A 30° • Highly precise position detection: 0.3 mm • With attachment positioning boss • Fast response: tr , tf = 5 µs (typ.) Input (Light 12.0 3.0±0.1 6.4±0.5 CNA1014H is a transmittive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. *2: Output power derating ratio is 1.33 mW/°C at Ta ≥ 25°C. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Forward voltage VF IF = 20 mA characteristics Reverse current IR VR = 3 V Input Output Collector-emitter cutoff current characteristics (Base open) Transfer Collector current ICEO IC characteristics Collector-emitter saturation voltage VCE(sat) Min VCE = 10 V Typ Max 1.25 1.40 V 10 µA 200 nA 12.0 mA 10 VCE = 5 V, IF = 20 mA 1.5 IF = 40 mA, IC = 1 mA 0.4 Unit V Rise time * tr VCC = 5 V, IC = 1 mA 5 µs Fall time * tf RL = 100 Ω 5 µs Note) 1. Input and output are practiced by electricity. 2. This device is designed be disregarded radiation. 3. *: Switching time measurement circuit Sig. in VCC (Input pulse) Sig. out 50 Ω RL 90% 10% (Output pulse) tr tr : Rise time tf : Fall time tf Note) The part number in the parenthesis shows conventional part number. Publication date: August 2001 SHG00059BED 1 CNA1014H IF , I C T a IF V F IF = 50 mA 30 IC 10 Forward voltage VF (V) 40 20 40 30 20 20 40 60 80 0 100 0 0.8 1.2 1.6 2.0 1 mA 0.8 0.4 102 10 ∆IC Ta IF = 30 mA 10 20 mA 10 mA 1 10 −2 10 −1 Forward current IF (mA) 1 40 0 40 Relative collector current ∆IC (%) Rise time tr (µs) 1 ∆IC d 100 VCC = 5 V Ta = 25°C RL = 1 kΩ 500 Ω 10 100 Ω 1 10 −1 10 −1 80 Ambient temperature Ta (°C ) 10 −2 10 −1 1 10 Collector current IC (mA) SHG00059BED 80 Ambient temperature Ta (°C ) tr IC 102 40 80 0 −40 102 10 102 VCE = 10 V 0 VCE = 5 V IF = 20 mA 120 Collector-emitter voltage VCE (V) ICEO Ta 10 80 160 10 −1 10 −1 40 Ta = 25°C Collector current IC (mA) 1 103 0 Ambient temperature Ta (°C ) IC VCE 10 1 0 −40 2.4 102 VCE = 5 V Ta = 25°C 10 −2 10 −1 2 10 mA Forward voltage VF (V) IC I F Collector current IC (mA) 0.4 Relative collector current ∆IC (%) 0 102 10 −2 −40 1.2 10 Ambient temperature Ta (°C ) Collector-emitter cutoff current (Base open) ICEO (nA) 1.6 Ta = 25°C 50 Forward current IF (mA) Forward current IF , collector current IC (mA) IF 50 0 −25 VF Ta 60 60 102 VCE = 5 V IF = 20 mA Ta = 25°C 80 Criterion 0 d 60 40 20 0 0 1 2 3 4 Distance d (mm) 5 6 Caution for Safety ■ This product contains Gallium Arsenide (GaAs). DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. 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