Power Transistors 2SC5505 Silicon NPN epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 ■ Features ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 60 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 8 A Peak collector current ICP 16 A Collector power dissipation PC 20 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Ta = 25°C 15.0±0.5 φ 3.2±0.1 13.7±0.2 4.2±0.2 Solder Dip • High-speed switching • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 1.4±0.2 1.6±0.2 2.6±0.1 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package 2.0 ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = 60 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 60 V, IB = 0 Forward current transfer ratio hFE1 VCE = 2 V, IC = 1 A 80 50 hFE2 VCE = 2 V, IC = 5 A Collector-emitter saturation voltage VCE(sat) IC = 5 A, IB = 0.25 A Base-emitter saturation voltage VBE(sat) IC = 5 A, IB = 0.25 A Turn-on time ton IC = 4 A Storage time tstg IB1 = 400 mA, IB2 = −400 mA VCC = 50 V Fall time tf Min Typ Max Unit 100 µA 60 V 100 µA 280 1.2 V 1.7 V 0.5 µs 0.5 1.0 µs 0.10 0.15 µs 0.2 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: February 2003 SJD00287AED 1 2SC5505 Rth t Area of safe operation 100 10 1 t=1s t = 10 ms t = 1 ms t = 0.1 ms Ta = 25°C (1) Thermal resistance Rth (°C/W) Collector current IC (A) Non repetitive pulse TC = 25°C (2) 10 1 0.1 0.1 10 100 0.01 0.001 (1) Without heat sink (2) With a 10 × 10 × 2 mm Al heat sink 0.01 Collector-emitter voltage VCE (V) 2 0.1 1 Time t (s) SJD00287AED 10 100 1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL