Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −180 V Collector-emitter voltage (Base open) VCEO −180 V Emitter-base voltage (Collector open) VEBO −6 V Collector current IC −1.5 A Peak collector current ICP −3 A 20 W Collector power dissipation PC Ta = 25°C 15.0±0.5 • Satisfactory linearity of forward current transfer ratio hFE • High transition frequency (fT) • Full-pack package which can be installed to the heat sink with one screw. 13.7±0.2 4.2±0.2 Solder Dip ■ Features φ 3.2±0.1 1.4±0.2 1.6±0.2 2.6±0.1 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package Internal Connection C 2.0 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = −10 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = −180 V, IE = 0 −100 µA Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0 −100 µA hFE VCE = −5 V, IC = − 0.1 A 240 − 0.5 V Forward current transfer ratio * Collector-emitter saturation voltage VCE(sat) Conditions Min Typ Max −180 Unit V 60 IC = −1 A, IB = − 0.1 A VCE = −10 V, IC = − 0.2 A, f = 10 MHz 100 MHz Collector output capacitance (Common base, input open circuited) Cob VCB = −10 V, IE = 0, f = 1 MHz 30 pF Turn-on time ton IC = − 0.4 A, Resistance loaded 0.1 µs Storage time tstg IB1 = 0.04 A, IB2 = − 0.04 A 1.0 µs Fall time tf VCC = 100 V 0.1 µs Transition frequency fT Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P hFE 60 to 140 120 to 240 Publication date: July 2004 SJD00316AED 1 2SA2140 PC Ta Safe operation area 10 (1) TC = Ta (2) Without heat sink Non repetitive pulse, TC = 25°C ICP 30 IC Collector current IC (A) Collector power dissipation PC (W) 35 25 (1) 20 15 10 1 0.1 5 t = 1 ms t = 10 ms t=1s (2) 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 2 0.01 1 10 100 1 000 Collector-emitter voltage VCE (V) SJD00316AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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