KSD2058 KSD2058 Low Frequency Power Amplifier TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current IB Base Current 0.5 A PC Collector Dissipation (Ta=25°C) 1.5 W 60 V 7 V 3 A PC Collector Dissipation (TC=25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB = 60V, IE = 0 IEBO Emitter Cut-off Current VEB = 7V, IC = 0 VCEO Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0 hFE DC Current Gain VCE = 5V, IC = 0.5A VCE(Sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A VBE(on) Base-Emitter ON Voltage VCE = 5V, IC = 0.5A fT Current Gain Bandwidth Product VCE = 5V, IC = 0.5A Cob Output Capacitance VCB = 10V, f = 1MHz tON Turn ON Time tSTG Storage Time tF Fall Time VCC = 30V, IC = 2A IB1 = - IB2 = 0.2A RL = 15Ω Min. Typ. Max. 10 Units µA 1 mA 60 V 8 1.5 V 0.4 MHz 3 V 35 pF 0.65 µs 1.3 µs 0.65 µs hFE Classification Classification O Y G hFE 60 ~ 120 100 ~ 200 150 ~ 300 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD2058 Typical Characteristics 3.0 IB = Ic[A], COLLECTOR CURRENT 70m 1000 A VCE = 5V IB = 60mA IB = 50mA IB = 40mA 2.5 hFE, DC CURRENT GAIN IB = 90mA IB = 80mA IB = 30mA 2.0 IB = 20mA 1.5 1.0 IB = 10mA 0.5 100 IB = 0mA 0.0 0 1 2 3 4 5 10 0.01 6 0.1 Figure 1. Static Characteristic 10 Figure 2. DC current Gain 10 1 Ic = 10 IB s 1mS IC(max) S 0m 1S DC 1 VCEOMAX 0.1 10 IC[A], COLLECTOR CURRENT ICmax(pulse) m 10 VCE(sat)[V], SATURATION VOLTAGE 1 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 0.1 0.01 0.01 0.1 1 10 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area 30 Tc=Ta INFINITE HEAT SINK PC[W], POWER DISSIPATION 25 20 15 10 5 NO HEAT SINK 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD2058 Package Demensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E