FAIRCHILD KSD2058

KSD2058
KSD2058
Low Frequency Power Amplifier
TO-220F
1
1.Base
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
60
Units
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
IB
Base Current
0.5
A
PC
Collector Dissipation (Ta=25°C)
1.5
W
60
V
7
V
3
A
PC
Collector Dissipation (TC=25°C)
25
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
ICBO
Parameter
Collector Cut-off Current
Test Condition
VCB = 60V, IE = 0
IEBO
Emitter Cut-off Current
VEB = 7V, IC = 0
VCEO
Collector-Emitter Breakdown Voltage
IC = 50mA, IB = 0
hFE
DC Current Gain
VCE = 5V, IC = 0.5A
VCE(Sat)
Collector-Emitter Saturation Voltage
IC = 2A, IB = 0.2A
VBE(on)
Base-Emitter ON Voltage
VCE = 5V, IC = 0.5A
fT
Current Gain Bandwidth Product
VCE = 5V, IC = 0.5A
Cob
Output Capacitance
VCB = 10V, f = 1MHz
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
VCC = 30V, IC = 2A
IB1 = - IB2 = 0.2A
RL = 15Ω
Min.
Typ.
Max.
10
Units
µA
1
mA
60
V
8
1.5
V
0.4
MHz
3
V
35
pF
0.65
µs
1.3
µs
0.65
µs
hFE Classification
Classification
O
Y
G
hFE
60 ~ 120
100 ~ 200
150 ~ 300
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD2058
Typical Characteristics
3.0
IB =
Ic[A], COLLECTOR CURRENT
70m
1000
A
VCE = 5V
IB = 60mA
IB = 50mA
IB = 40mA
2.5
hFE, DC CURRENT GAIN
IB = 90mA
IB = 80mA
IB = 30mA
2.0
IB = 20mA
1.5
1.0
IB = 10mA
0.5
100
IB = 0mA
0.0
0
1
2
3
4
5
10
0.01
6
0.1
Figure 1. Static Characteristic
10
Figure 2. DC current Gain
10
1
Ic = 10 IB
s
1mS
IC(max)
S
0m
1S
DC
1
VCEOMAX
0.1
10
IC[A], COLLECTOR CURRENT
ICmax(pulse)
m
10
VCE(sat)[V], SATURATION VOLTAGE
1
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.1
0.01
0.01
0.1
1
10
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Safe Operating Area
30
Tc=Ta
INFINITE HEAT SINK
PC[W], POWER DISSIPATION
25
20
15
10
5
NO HEAT SINK
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD2058
Package Demensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E