FAIRCHILD BD375

BD375/377/379
BD375/377/379
Medium Power Linear and Switching
Applications
• Complement to BD376, BD378 and BD380 respectively
TO-126
1
NPN Epitaxial Silicon Transistor
1. Emitter
2.Collector
3.Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
: BD375
: BD377
: BD379
Collector-Base Voltage
Value
50
75
100
Units
V
V
V
45
60
80
V
V
V
V
VCEO
Collector-Emitter Voltage : BD375
: BD377
: BD379
VEBO
Emitter-Base Voltage
5
IC
Collector Current (DC)
2
A
ICP
*Collector Current (Pulse)
3
A
IB
Base Current
PC
Collector Dissipation (TC=25°C)
1
A
25
W
TJ
TSTG
Junction Temperature
150
°C
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BD375
: BD377
: BD379
Test Condition
Min.
IC = 100mA, IB = 0
45
60
80
V
V
V
50
75
100
V
V
V
BVCBO
Collector-Base
Breakdown Voltage
: BD375
: BD377
: BD379
IC = 100µA, IE = 0
ICBO
Collector Cut-off Current
: BD375
: BD377
: BD379
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
hFE1
hFE2
* DC Current Gain
VCE = 2V, IC = 0.15A
VCE = 2V, IC = 1A
Typ.
40
20
Max.
Units
2
2
2
µA
µA
µA
100
µA
375
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 1A, IB = 0.1A
1
V
VBE(on)
* Base-Emitter ON Voltage
VCE = 2V, IC = 1A
1.5
V
tON
Turn ON Time
tOFF
Turn OFF Time
VCC = 30V, IC = 0.5A
IB1 = - IB2 = 0.05A
RL = 60Ω
50
ns
500
ns
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
hFE Classification
Classification
6
10
16
25
hFE1
40 ~ 100
63 ~ 160
100 ~ 250
150 ~ 375
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD375/377/379
Typical Characteristics
60
40
20
100
300
200
100
0
1E-3
0
10
400
.IB
1000
IC[mA], COLLECTOR CURRENT
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
10
1.1
1.0
0.8
)
(on
V
V
=5
V CE
0.7
BE
0.6
0.5
0.4
1
0.1
BD379
BD377
BD375
0.3
ICMAX. (Continuous)
ED
IMIT
IC[A], COLLECTOR CURRENT
t)
(sa
IB
V BE
10.
Ic =
0.9
L
S/b
VBE(V), BASE EMITTER VOLTAGE
0.01
0.2
0.1
1E-3
0.01
0.1
1
10
0.01
0.1
1
10
VCEO MAX.
hFE, DC CURRENT GAIN
80
IC = 1
0
VCE(sat)(mV), SATURATION VOLTAGE
VCE = -2V
IC = 20 . IB
500
100
100
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Voltage
Figure 4. Safe Operating Area
40
PC[W], POWER DISSIPATION
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
200
o
Tc[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD375/377/379
Package Demensions
8.00 ±0.30
11.00
ø3.20 ±0.10
±0.20
3.25 ±0.20
14.20MAX
3.90
±0.10
TO-126
(1.00)
(0.50)
0.75 ±0.10
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
16.10
±0.30
13.06
0.75 ±0.10
±0.20
1.75 ±0.20
1.60 ±0.10
+0.10
0.50 –0.05
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
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E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E