KSC3074 KSC3074 High Power Switching • Complement to KSA1244 1 I-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Value 60 Collector-Base Voltage Units V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current 5 A IB Base Current 1 A PC Collector Dissipation (Ta=25°C) 1 W PC Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage Test Condition IC = 10mA, IB = 0 Min. 50 Typ. Max. Units V ICBO Collector Cut-off Current VCB = 50V, IE = 0 1 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 µA hFE1 hFE2 DC Current Gain VCE = 1V, IC = 1A VCE = 1V, IC = 3A VCE(sat) Collector-Emitter Saturation Voltage IC= 3A, IB = 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 3A, IB = 0.15A 0.9 fT Current Gain Bandwidth Product VCE = 4V, IC = 1A 120 MHz pF 70 30 240 0.5 1.2 V V Cob Output Capacitance VCB = 10V, f = 1MHz 80 tON Turn ON Time 0.1 µs tSTG Storage Time 1 µs tF Fall Time VCC = 30V, IC= 3A IB1= - I B2=0.15A RL = 10Ω 0.1 µs hFE Classification Classification O Y hFE1 70 ~ 140 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC3074 Typical Characteristics 8 IC[A], COLLECTOR CURRENT 7 m 00 A IB= 90m 1000 IB = 80mA IB = 70mA IB = 60mA A 6 IB = 50mA 5 IB = 40mA 4 IB = 30mA 3 IB = 20mA VCE = 1V hFE, DC CURRENT GAIN 1 I B= 2 IB = 10mA 100 10 1 IB = 0 0 0 1 2 3 4 5 6 7 1 0.01 8 0.1 VCE [V], COLLECTOR-EMITTER VOLTAGE 1 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 1 V CE = 1V IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT IC = 20 IB VBE(sat) 0.1 V CE(sat) 0.01 0.01 0.1 1 10 VBE[V], BASE-EMITTER VOLTAGE VBE (sat), V CE(sat)[V], SATURATION VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter on Voltage 32 10 PC[W], POWER DISSIPATION s 1 0.1 VCEO MAX. IC[A], COLLECTOR CURRENT 28 s C m 10 D IC MAX. (DC) 1m IC MAX. (Pulse) 0.01 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 24 20 16 12 8 4 0 100 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A, February 2000 KSC3074 Package Demensions I-PAK 2.30 ±0.20 6.60 ±0.20 5.34 ±0.20 2.30TYP [2.30±0.20] ±0.20 ±0.30 16.10 ±0.20 ±0.30 9.30 0.76 ±0.10 1.80 0.80 MAX0.96 0.50 ±0.10 6.10 ±0.20 (0.50) 0.70 (4.34) ±0.10 0.60 ±0.20 (0.50) 2.30TYP [2.30±0.20] 0.50 ±0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E