New Product MURS340, MURS360 Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified DO-214AB (SMC) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 400 V, 600 V IFSM 125 A trr 50 ns VF 1.05 V TJ max. 175 °C MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code MURS340 MURS360 MG MJ UNIT Maximum repetitive peak reverse voltage VRRM 400 600 V Working peak reverse voltage VRWM 400 600 V Maximum DC blocking voltage VDC 400 600 V Maximum average forward rectified current at: (fig. 1) TL = 130 °C TL = 115 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range Document Number: 88816 Revision: 23-Nov-09 3.0 IF(AV) A 4.0 IFSM 125 A TJ, TSTG - 65 to + 175 °C For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product MURS340, MURS360 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 3.0 A Maximum instantaneous forward voltage IF = 4.0 A IF = 3.0 A SYMBOL MURS360 UNIT 1.25 TJ = 25 °C VF (1) V 1.28 TJ = 150 °C 1.05 TJ = 25 °C Maximum instantaneous reverse current at rated DC blocking voltage MURS340 10 IR (1) TJ = 150 °C μA 250 Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 50 ns Maximum reverse recovery time IF = 1.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 10 % IRM trr 75 ns Maximum forward recovery time IF = 1.0 A, dI/dt = 100 A/μs, recovery to 1.0 V tfr 25 ns Note (1) Pulse test: t = 300 μs, duty cycle ≤ 2 % p THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance junction to ambient MURS340 MURS360 11 RθJL UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MURS340-E3/57T 0.211 57T 850 7" diameter plastic tape and reel MURS340-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel MURS340HE3/57T (1) 0.211 57T 850 7" diameter plastic tape and reel MURS340HE3/9AT (1) 0.211 9AT 3500 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 Average Forward Current (A) Average Forward Current (A) 5 4 3 2 1 0 125 100 75 50 25 0 25 50 75 100 125 150 175 1 10 100 TL - Lead Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88816 Revision: 23-Nov-09 New Product MURS340, MURS360 Vishay General Semiconductor 1000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 125 °C 10 TJ = 150 °C 1 TJ = 100 °C TJ = 25 °C 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 10 1 0.1 2.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 120 Stored Charge/Reverse Recovery Time (nC/ns) 1000 Instantaneous Reverse Current (μA) 100 TJ = 150 °C 100 TJ = 125 °C TJ = 100 °C 10 1 TJ = 25 °C 0.1 0.01 trr Qrr 100 1 A, 50 A/μs, 30 V 80 60 40 20 0 0 20 40 60 80 100 25 50 75 100 125 Percent of Rated Peak Reverse Voltage (%) Junction Temperature (°C) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Reverse Switching Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Document Number: 88816 Revision: 23-Nov-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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