ASI MSC81111

MSC81111
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MSC81111 is Designed for Class
"C" Amplifier Applicatioons from 0.4 to
1.2 GHz, Supplied in Common Base
Package.
PACKAGE STYLE HLP-1
MAXIMUM RATINGS
IC
600 mA
VCB
35 V
PDISS
21.8 W @ TC = 25 C
TJ
-65 C to +200 C
TSTG
-65 C to +200 C
θJC
8 C/W
O
O
O
O
O
1 = Emitter
2 = Collector
3 = Base
O
Inches
Min
0.790
0.225
0.144
0.115
0.055
0.045
0.115
0.003
0.225
0.220
0.125
0.552
Dim:
A
B
C
D
E
F
H
J
K
N
Q
U
Max
0.810
0.235
0.180
0.125
0.065
0.055
0.135
0.006
0.275
0.240
0.135
0.572
Millimeters
Min
Max
20.07
20.6
5.72
5.97
3.66
4.58
2.93
3.17
1.40
1.65
1.15
1.39
2.93
3.42
0.08
0.15
5.72
6.98
5.59
6.09
3.18
3.42
14.03
14.5
NONE
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
BVCER
IC = 5.0 mA
BVCBO
IC = 1.0 mA
ICBO
VCB = 28 V
BVEBO
IE = 1.0 mA
hFE
VCE = 5.0 V
COB
VCB = 28 V
Pout
ηC
GP
O
TC = 25 C
VCC = 28 V
MINIMUM TYPICAL MAXIMUM
RBE = 10Ω
V
45
V
1.0
3.5
IC = 200 mA
15
f = 1.0 GHz
5.0
50
10
6.6
52
11.2
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
mA
V
f = 1.0 MHz
Pin = 500 mW
UNITS
45
120
---
6.5
pF
W
%
dB
REV. A
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