MSC3005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The MSC3005 is Designed for Class "C" Amplifier Applications up to 3 GHz. A B FEATURES: .060 x 45° CHAMFER C E G L 700 mA 30 V VCB O TSTG -65 C to +200 C θJC O O O 8.5 C/W CHARACTERISTICS SYMBOL I K NP MAXIMUM inches / mm inches / mm A .028 / 0.71 .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 .255 / 6.48 .132 / 3.35 .125 / 3.18 .117 / 2.97 .110 / 2.79 .117 / 2.97 G 17 W @ TC = 25 C O J MINIMUM F O -65 C to +200 C H DIM E TJ F M MAXIMUM RATINGS IC Base is connected to flange E • POUT = 5.0 W Typ. at 3 GHz • Common Base Configuration • Omnigold™ Metellization System PDISS C ØD H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 ASI ORDER CODE: ASI30304 NONE O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS 45 V IC = 1.0 mA 45 V BVEBO IE = 1.0 mA 3.5 V ICBO VCB = 28 V hFE VCE = 5.0 V COB VCB = 28 V PG ηC VCC = 28 V BVCER IC = 5.0 mA BVCBO RBE = 10Ω IC = 500 mA 20 f = 1.0 MHz POUT = 4.5 W f = 3.0 GHz 4.5 30 5.0 35 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 mA 120 --- 7.5 pF dB % REV. A 1/1