MSC3000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG (B) The ASI MSC3000 is Designed for general purpose Amplifier Applications up to 3500 MHz. A 1 .100 X 45° ØD .088 x 45° CHAMFER 3 C B FEATURES: • POUT = 5.0 W Typ. at 3 GHz • Common Base Configuration • Omnigold™ Metellization System 2 E F G H I MAXIMUM RATINGS 100 mA IC VCC PDISS 30 V 2.5 W @ TC ≤ 85 °C TSTG -65 °C to +200 °C θJC 45 °C/W CHARACTERISTICS SYMBOL K DIM MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B 1.050 / 26.67 MAXIMUM C .245 / 6.22 D .120 / 3.05 .140 / 3.56 E .552 / 14.02 .572 / 14.53 F .790 / 20.07 .810 / 20.57 .003 / 0.08 .007 / 0.18 .255 / 6.48 .285 / 7.24 G H -65 °C to +200 °C TJ J I .052 / 1.32 .072 / 1.83 J .120 / 3.05 .130 / 3.30 .210 / 5.33 K 1 = COLLECTOR 2 = BASE 3 = EMITTER NONE TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS 50 V IC = 1.0 mA 50 V BVEBO IE = 1.0 mA 3.5 V ICBO VCB = 28 V hFE VCE = 5.0 V COB VCB = 28 V PG ηC VCC = 28 V BVCER IC = 5.0 mA BVCBO RBE = 10Ω IC = 500 mA 20 f = 1.0 MHz POUT = 0.5 W f = 3.0 GHz 7.0 25 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 250 µA 120 --- 2.5 pF dB % REV. A 1/1