MMDT3946LP4 COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS NEW PRODUCT Features • • • • • Complementary Pair: One 3904 (NPN) and One 3906 (PNP) Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free by Design/RoHS Compliant (Note 1) “Green” Device (Note 2) DFN1310H4-6 Dim Min Max Typ A 1.25 1.38 1.30 B 0.95 1.08 1.00 C 0.20 0.30 0.25 D* - - 0.10 E** - - 0.20 G - 0.40 - H 0 0.05 0.02 K* 0.10 0.20 0.15 L* 0.30 0.50 0.40 M** - - 0.35 A N* - - 0.25 Bottom View Z** - - 0.05 Top View Mechanical Data • • • • • • G Case: DFN1310H4-6 Case Material: Molded Plastic. “Green Molding” Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish – NiPdAu over Copper leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 4 C2 B1 Ordering Information: See Page 4 H Side View K Z R0 .1 E1 50 L L E B N D D E2 B2 C1 Internal Schematic N M C Z (TOP VIEW) All Dimensions in mm E1, B1, C1 = PNP3906 Section E2, B2, C2 = NPN3904 Section Maximum Ratings, NPN 3904 Section Characteristic * Dimensions D, K, L, N Repeat 4X ** Dimensions E, M, Z Repeat 2X @TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current – Continuous IC 200 mA Power Dissipation (Notes 3, 4) Pd 200 mW RθJA 625 °C/W Thermal Resistance, Junction to Ambient (Note 3) Maximum Ratings, PNP 3906 Section Characteristic @TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V IC -200 mA Pd 200 mW RθJA 625 °C/W Collector Current - Continuous (Note 1) Power Dissipation (Notes 3, 4) Thermal Resistance, Junction to Ambient (Note 3) Notes: 1. 2. 3. 4. No purposefully added lead. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB. Maximum combined dissipation. DS30822 Rev. 4 - 2 1 of 5 www.diodes.com MMDT3946LP © Diodes Incorporated NEW PRODUCT Electrical Characteristics, NPN 3904 Section Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) @TA = 25°C unless otherwise specified Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL 60 40 6.0 ⎯ ⎯ ⎯ ⎯ ⎯ 50 50 V V V nA nA hFE 40 70 100 60 30 ⎯ ⎯ 300 ⎯ ⎯ Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.20 0.30 V Base-Emitter Saturation Voltage VBE(SAT) 0.65 ⎯ 0.85 0.95 V Cobo ⎯ 4.0 pF Current Gain-Bandwidth Product fT 300 ⎯ MHz SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time td tr ts tf ⎯ ⎯ ⎯ ⎯ 35 35 200 50 ns ns ns ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Electrical Characteristics, PNP 3906 Section Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) ⎯ Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL -40 -40 -5.0 ⎯ ⎯ ⎯ ⎯ ⎯ -50 -50 V V V nA nA hFE 60 80 100 60 30 ⎯ ⎯ 300 ⎯ ⎯ Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.25 -0.40 V Base-Emitter Saturation Voltage VBE(SAT) -0.65 ⎯ -0.85 -0.95 V Cobo ⎯ 4.5 pF Current Gain-Bandwidth Product fT 250 ⎯ MHz SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time td tr ts tf ⎯ ⎯ ⎯ ⎯ 35 35 225 75 ns ns ns ns SMALL SIGNAL CHARACTERISTICS Output Capacitance Notes: 5. IC = 10μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VCE = 20V, IC = 20mA, f = 100MHz VCC = 3.0V, IC = 10mA, VBE(off) = -0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA @TA = 25°C unless otherwise specified Symbol DC Current Gain Test Condition ⎯ Test Condition IC = -10μA, IE = 0 IC = -1.0mA, IB = 0 IE = -10μA, IC = 0 VCE = -30V, VEB(OFF) = -3.0V VCE = -30V, VEB(OFF) = -3.0V IC = -100µA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -100mA, VCE = -1.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCB = -5.0V, f = 1.0MHz, IE = 0 VCE = -20V, IC = -10mA, f = 100MHz VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA Short duration test pulse used to minimize self-heating effect. DS30822 Rev. 4 - 2 2 of 5 www.diodes.com MMDT3946LP © Diodes Incorporated PD, POWER DISSIPATION (mW) 200 f = 1MHz 150 100 50 0 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device) (Note 3) 25 Fig. 2, Typical Output Capacitance Characteristics (NPN-3904) 1 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 1,000 hFE, DC CURRENT GAIN T A = 125°C 100 TA = -25°C TA = +25°C 10 IC IB = 10 0.1 VCE = 1.0V 1 0.1 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) NEW PRODUCT 250 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current (NPN-3904) 0.01 0.1 1,000 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current (NPN-3904) 10 f = 1MHz IC IB = 10 1 0.1 0.1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current (NPN-3904) DS30822 Rev. 4 - 2 Fig. 6, Typical Output Capacitance Characteristics (PNP-3906) 3 of 5 www.diodes.com MMDT3946LP © Diodes Incorporated 1,000 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 10 NEW PRODUCT hFE, DC CURRENT GAIN TA = 125°C 100 TA = -25°C TA = +25°C 10 IC IB = 10 1 0.1 VCE = 1.0V VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7, Typical DC Current Gain vs Collector Current (PNP-3906) 6. 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 8, Typical Collector-Emitter Saturation Voltage vs. Collector Current (PNP-3906) IC IB = 10 IC, COLLECTOR CURRENT (mA) Fig. 9, Typical Base-Emitter Saturation Voltage vs. Collector Current (PNP-3906) Ordering Information Notes: 0.01 1 1,000 (Note 6) Device Packaging Shipping MMDT3946LP4-7 DFN1310H4-6 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 46 DS30822 Rev. 4 - 2 46= Product Type Marking Code 4 of 5 www.diodes.com MMDT3946LP © Diodes Incorporated NEW PRODUCT IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 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