DZT5551 NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DZT5401) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 3) 3 2 1 4 SOT-223 Mechanical Data • • • • • • • • COLLECTOR Case: SOT-223 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking & Type Code Information: See Page 3 Ordering Information: See Page 3 Weight: 0.112 grams (approximate) Maximum Ratings 2,4 3 E 2 C C 4 1 BASE 1 B 3 EMITTER TOP VIEW Schematic and Pin Configuration @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC Value 180 160 6.0 600 Unit V V V mA Symbol PD RθJA Tj, TSTG Value 1 125 -55 to +150 Unit W °C/W °C Thermal Characteristics Characteristic Power Dissipation @TA = 25°C (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage @TA = 25°C unless otherwise specified Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO 180 160 6.0 ⎯ ⎯ ⎯ Collector Cutoff Current ICBO ⎯ 50 Emitter Cutoff Current ON CHARACTERISTICS (Note 4) IEBO ⎯ 50 V V V nA μA nA DC Current Gain hFE 80 80 30 Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ 250 ⎯ 0.15 0.20 Base-Emitter Saturation Voltage VBE(SAT) ⎯ 1.0 V Cobo hfe fT NF ⎯ 50 100 ⎯ 6.0 200 300 8.0 pF ⎯ MHz dB SMALL SIGNAL CHARACTERISTICS Output Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure Notes: 1. 2. 3. 4. ⎯ V Test Condition IC = 100μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100°C VEB = 4.0V, IC = 0 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 10V, f = 1.0MHz, IE = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 200μA, RS = 1.0kΩ, f = 1.0kHz No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%. DS31219 Rev. 2 – 2 1 of 4 www.diodes.com DZT5551 © Diodes Incorporated 0.30 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (mW) 0.8 0.6 0.4 0.2 0 0 25 50 150 100 125 75 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature 0.25 IB = 10mA 0.20 IB = 8mA IB = 6mA 0.15 IB = 4mA 0.10 IB = 2mA 0.05 0.00 1 2 3 4 5 6 7 8 9 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 250 0 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.3 200 150 100 50 0.2 0.1 0 0.0001 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 1 0.8 0.6 0.4 0.2 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current DS31219 Rev. 2 – 2 1 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) NEW PRODUCT 1.0 2 of 4 www.diodes.com 1.2 1 0.8 0.6 0.4 0.2 0 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current DZT5551 © Diodes Incorporated fT, CURRENT GAIN-BANDWIDTH PRODUCT (MHz) 60 250 f = 1MHz 50 200 40 150 Cibo NEW PRODUCT 30 100 20 10 Cobo 0 0.01 0.1 1 10 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics 100 VCE = 10V f = 100MHz 50 0 0 20 40 60 80 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current Ordering Information (Note 5) Device DZT5551-13 Notes: Packaging SOT-223 Shipping 2500/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information (Top View) YWW K4N = Product type marking code = Manufacturer’s code marking YWW = Date code marking Y = Last digit of year ex: 7 = 2007 WW = Week code 01 - 52 Package Outline Dimensions SOT-223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e — — 4.60 e1 — — 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm DS31219 Rev. 2 – 2 3 of 4 www.diodes.com DZT5551 © Diodes Incorporated Suggested Pad Layout 3.3 NEW PRODUCT 1.6 6.4 1.6 1.2 2.3 (Unit: mm) IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS31219 Rev. 2 – 2 4 of 4 www.diodes.com DZT5551 © Diodes Incorporated