DZT651 LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DZT751) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 3 2 1 4 SOT-223 Mechanical Data • • • • • • • Case: SOT-223 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish — Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.115 grams Maximum Ratings COLLECTOR 2,4 3 E C 4 2 C BASE 1 1 B 3 EMITTER TOP VIEW Schematic and Pin Configuration @TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 3 A Peak Pulse Collector Current ICM 6 A Symbol Value Unit PD 1 (Note 3) 2 (Note 4) W RθJA 125 °C/W TJ, TSTG -55 to +150 °C Thermal Characteristics Characteristic Power Dissipation @TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C Operating and Storage Temperature Range Notes: 1. 2. 3. 4. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Device mounted on Polyimide PCB with 1.8cm2 copper area. DS30809 Rev. 3 - 2 1 of 4 www.diodes.com DZT651 © Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 80 ⎯ ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 60 ⎯ ⎯ V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5 ⎯ ⎯ V IE = 100μA, IC = 0 μA μA VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 100°C Collector Cutoff Current ICBO ⎯ ⎯ 0.1 10 Emitter Cutoff Current IEBO ⎯ ⎯ 0.1 μA VEB = 4V, IC = 0 Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ 0.08 0.23 0.3 0.6 V V IC = 1A, IB = 100mA IC = 3A, IB = 300mA Base-Emitter Saturation Voltage VBE(SAT) ⎯ 0.85 1.25 V IC = 1A, IB = 100mA Base-Emitter Turn-On Voltage VBE(ON) ⎯ 0.8 1 V VCE = 2V, IC = 1A hFE 70 100 80 40 200 200 185 120 ⎯ 300 ⎯ ⎯ ⎯ VCE = 2V, IC = 50mA VCE = 2V, IC = 500mA VCE = 2V, IC = 1A VCE = 2V, IC = 2A fT 140 200 ⎯ MHz Cobo ⎯ ⎯ 30 pF VCB = 10V, f = 1MHz ton toff ⎯ ⎯ 35 230 ⎯ ⎯ ns ns VCC = 10V, IC = 500mA IB1 = IB2 = 50mA On Characteristics (Note 5) DC Current Gain AC Characteristics Transition Frequency Output Capacitance Switching Times VCE = 5V, IC = 100mA, f = 100MHz 5. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%. Notes: 2.0 1.2 1.8 IB = 10mA 1.0 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) NEW PRODUCT Off Characteristics (Note 5) 0.8 0.6 0.4 0.2 1.6 IB = 8mA 1.4 1.2 IB = 6mA 1.0 0.8 IB = 4mA 0.6 0.4 IB = 2mA 0.2 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 0 DS30809 Rev. 3 - 2 0.0 5 1 2 3 4 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage 2 of 4 www.diodes.com 0 DZT651 © Diodes Incorporated 0.35 350 TA = 150°C 250 TA = 85°C 200 VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 300 TA = 25°C 150 T A = -55°C 100 0.3 IC/IB = 10 0.25 0.2 0.15 TA = 150°C 0.1 T A = 85°C TA = 25°C 0.05 50 TA = -55°C 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 3 Typical DC Current Gain vs. Collector Current 0 0.0001 10 1.2 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 VCE = 2V 1.0 0.8 VBE(SAT), BASE EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE EMITTER TURN-ON VOLTAGE (V) 0 0.001 IC /IB = 10 1.0 0.8 TA = -55°C TA = -55°C 0.6 0.6 TA = 25°C 0.4 TA = 85°C 0.0 0.0001 TA = 85°C 0.2 TA = 150°C 0.2 TA = 25°C 0.4 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current TA = 150°C 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 250 50 fT, GAIN-BANDWIDTH PRODUCT (MHz) 60 Cobo, OUTPUT CAPACITANCE (pF) NEW PRODUCT VCE = 2V f = 1MHz 40 30 20 10 0 0 5 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Output Capacitance Characteristics DS30809 Rev. 3 - 2 200 150 100 VCE = 5V f = 100MHz 50 0 0 20 40 60 80 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current 3 of 4 www.diodes.com DZT651 © Diodes Incorporated Ordering Information (Note 6) Packaging SOT-223 Device DZT651-13 NEW PRODUCT Notes: Shipping 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/ap2007.pdf. Marking Information (Top View) YWW KN2 KN2 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year ex: 7 = 2007 WW = Week code 01 - 52 Package Outline Dimensions SOT-223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e — — 4.60 e1 — — 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30809 Rev. 3 - 2 4 of 4 www.diodes.com DZT651 © Diodes Incorporated