PANJIT MMBT3904FN3

MMBT3904FN3
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
40 Volts
POWER
250 mWatts
Unit : inch(mm)
DFN 3L
0.042(1.05)
0.037(0.95)
0.026(0.65)
0.021(0.55)
FEATURES
• NPN epitaxial silicon, planar design
• Collector-emitter voltage VCE = 40V
0.0 22 (0.55)
0.047(0.45)
• Collector current IC = 200mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
0.002(0.05) MAX.
Case: DFN 3L, Plastic
0.0 14 (0.20)
0.022(0.55)
0.047(0.45)
2
3
1
0.013(0.32)
0.008(0.22)
0.004(0.10)
0.014(0.36)
0.013(0.32)
0.008(0.22)
Marking: AC
0.0 08 (0.20)
0.004(0.10) 0.0 08 (0.20)
Terminals: Solderable per MIL-STD-750, Method 2026
ABSOLUTE RATINGS
Parameter
Symbol
Value
Units
Collector - E mitter Voltage
VCEO
40
V
Collector - B ase Voltage
VCBO
60
V
Emitter - B ase Voltage
VEBO
6.0
V
IC
200
mA
Symbol
Value
Units
Max Power Dissipation (Note 1)
PTOT
250
mW
Thermal Resistance , Junction to Ambient
RJA
500
TJ
-5 5 t o + 1 5 0
O
T S TG
-5 5 t o + 1 5 0
O
Collector Current - C ontinuous
THERMAL CHARACTERISTICS
Parameter
J unc ti o n Te m p e r a tur e
Op e r a ti ng Te m p e r a tur e
C/W
O
C
C
Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm.
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
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PAGE . 1
MMBT3904FN3
ELECTRICAL CHARACTERISTICS
P a ra me te r
S ymb o l
Te s t C o nd i ti o n
MIN.
TYP.
MA X .
Uni ts
C o lle c t o r - E mi tt e r B r e a k d o wn V o lta g e
V (B R) C E O IC = 1 .0 mA , IB = 0
40
-
-
V
C o lle c to r - B a s e B re a k d o wn Vo lta g e
V (B R) C B O IC = 1 0 uA , IE = 0
60
-
-
V
E mi tte r - B a s e B r e a k d o wn Vo lta g e
V (B R) E B O
6 .0
-
-
V
B a s e C ut o f f C ur r e nt
C o lle c to r C uto ff C urr e nt
D C C urr e nt G a i n ( No te 2 )
IE = 1 0 uA , IC =0
IB L
V C E = 3 0 V, V E B = 3 .0 V
-
-
50
nA
IC E X
V C E = 3 0 V, V E B = 3 .0 V
-
-
50
nA
hFE
IC = 0 .1 mA , V C E = 1 .0 V
IC = 1 .0 mA , V C E = 1 .0 V
IC = 1 0 mA , V C E = 1 .0 V
IC = 5 0 mA , V C E = 1 .0 V
IC = 1 0 0 mA , V C E = 1 .0 V
40
70
100
60
30
-
300
-
-
C o lle c t o r - E mi tt e r S a tur a t i o n V o lta g e
( No te 2 )
V C E (S AT)
IC = 1 0 mA , IB = 1 .0 mA
IC = 5 0 mA , IB = 5 .0 mA
-
-
0 .2
0 .3
V
B a s e - E mi tte r S a tur a ti o n Vo lta g e ( No te 2 )
V B E (S AT)
IC = 1 0 mA , IB = 1 .0 mA
IC = 5 0 mA , IB = 5 .0 mA
0 .6 5
-
-
0 .8 5
0 .9 5
V
C o lle c to r - B a s e C a p a c i ta nc e
C CBO
V C B = 5 V, I E = 0 , f = 1 MHz
-
-
4 .0
pF
E mi tte r - B a s e C a p a c i ta nc e
C EBO
V E B = 0 .5 V, IC =0 ,
f= 1 MHz
-
-
8 .0
pF
D e la y Ti me
td
V C C = 3 V,V B E = - 0 .5 V,
IC = 1 0 mA ,IB =1 .0 mA
-
-
35
ns
Ri s e Ti me
tr
V C C = 3 V,V B E = - 0 .5 V,
IC = 1 0 mA ,IB =1 .0 mA
-
-
35
ns
S to ra g e Ti me
ts
V C C = 3 V,IC =1 0 mA
IB 1 =IB 2 =1 .0 mA
-
-
200
ns
F a ll Ti me
tf
V C C = 3 V,IC =1 0 mA
< 2.0%.
IB 1 =IB 2 =1 .0 mA
-
-
50
ns
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+3V
300ns
D u ty C y c le ~ 2 .0 %
+ 1 0 .9 V
275ȍ
0
-0 .5 V
< 1ns
C S* < 4 p F
10K ȍ
D e la y a n d R is e T im e E q u iv a le n t T e s t C ir c u it
+ 3V
27 5 ȍ
1 0 to 5 0 0 u s
D u ty C yc le ~ 2 .0%
+ 10 .9 V
0
10K ȍ
-9 .1 V
< 1ns
C SS** << 44pF
pF
C
1N916
S to ra g e a n d F a ll T im e E q u iv a le n t T e s t C irc u it
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PAGE . 2
ELECTRICAL CHARACTERISTICS CURVE
300
1.400
VCE = 1V
TJ = 150 ˚C
250
1.000
200
TJ = 100 ˚C
TJ = 100 ˚C
VBE (V)
hFE
1.200
150
TJ = 25 ˚C
0.800
TJ = 25 ˚C
0.600
100
0.400
50
TJ = 150
0.200
0
VCE = 1V
0.000
0.01
0.1
1
10
100
1000
0.01
0.1
Collector Current, I C (mA)
1
10
100
1000
Collector Current, IC (mA)
Fig. 1. Typical hFE vs Collector Current
Fig. 2. Typical VBE vs Collector Current
1.0
1.000
TJ = 25 ˚C
IC/IB = 10
TJ = 150 ˚C
VBE(sat) (V)
VCE(sat) (V)
TJ = 100 ˚C
0.100
TJ = 25 ˚C
TJ = 150 ˚C
IC/IB = 10
0.1
0.010
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
Collector Current, I C (mA)
Collector Current, I C (mA)
Fig. 3. Typical VCE (sat) vs Collector Current
Fig. 4. Typical VBE (sat) vs Collector Current
10
TJ = 25 ˚C
Capacitance (pF)
CIB (EB)
COB (CB)
1
0.1
1
10
100
Reverse Voltage, VR (V)
Fig. 5. Typical Capacitances vs Reverse Voltage
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PAGE . 3
MMBT3904FN3
MOUNTING PAD LAYOUT
DFN 3L
0.043
(1.10)
0.010
(0.26)
0.010
(0.25)
0.024
(0.60)
0.02 8
(0.70)
0.004
(0.10)
0.017
(0.42)
0.02 7
(0.68)
ORDER INFORMATION
• Packing information
T/R - 8K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.2-JUL.18.2009
PAGE . 4