MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 600mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-323, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Apporx. Weight: 0.0001 ounce, 0.005 gram • Marking: M2A ABSOLUTE RATINGS PARAMETER Symbol Value Units Collector - Emitter Voltage VCEO 40 V Collector - Base Voltage VCBO 75 V Emitter - Base Voltage V EBO 6.0 V IC 600 mA Symbol Value Units Max Power Dissipation (Note 1) PTOT 150 mW Thermal Resistance , Junction to Ambient RθJA 830 Junction Temperature TJ -55 to 150 O Storage Temperature TSTG -55 to 150 O Collector Current - Continuous THERMAL CHARACTERISTICS PARAMETER O C/W C C Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. May 13.2010-REV.00 PAGE . 1 MMBT2222AW ELECTRICAL CHARACTERISTICS PA RA ME TE R S ym b o l Te s t C o nd i ti o n MIN. TYP. MA X . Uni ts C o lle c to r - E mi tte r B r e a k d o wn Vo lta g e V ( B R) C E O I C = 1 .0 m A , I B = 0 40 - - V C o lle c to r - B a s e B re a k d o wn Vo lta g e V ( B R) C B O I C = 1 0 uA , IE = 0 75 - - V E m i tte r - B a s e B re a k d o wn Vo lta g e V ( B R) E B O I E = 1 0 uA , I C = 0 6 .0 - - V B a s e C uto ff C urr e nt IB L V C E = 6 0 V, V E B = 3 . 0 V - - 20 nA IC E X V C E = 6 0 V, V E B = 3 . 0 V - - 10 nA IC B O V C E = 6 0 V, I E = 0 , V C E = 6 0 V, I E = 0 , T J = 1 2 5 O C - - 10 10 nA uA IE B O V E B = 3 . 0 V, IC = 0 , - - 100 nA hF E I C = 0 .1 m A , V C E = 1 0 V I C = 1 .0 m A , V C E = 1 0 V I C = 1 0 mA , V C E = 1 0 V I C = 1 0 mA , V C E = 1 0 V,T J = 1 2 5 O C I C = 1 5 0 mA , V C E = 1 0 V (No te 2 ) I C = 1 5 0 mA , V C E = 1 V ( No te 2 ) I C = 5 0 0 mA , V C E = 1 0 V ( No te 2 ) 35 50 75 35 100 50 40 - 300 - - C o lle c to r C uto ff C ur re nt E m i tte r C uto ff C ur re nt D C C urre nt Ga i n C o lle c to r - E mi tte r S a tura ti o n Vo lta g e ( No te 2 ) V C E ( S AT) I C = 1 5 0 mA , IB = 1 5 m A I C = 5 0 0 mA , IB = 5 0 m A - - 0 .3 1 .0 V B a s e - E m i tte r S a tura ti o n Vo lta g e ( No te 2 ) V B E ( S AT) I C = 1 5 0 mA , IB = 1 5 m A I C = 5 0 0 mA , IB = 5 0 m A 0 .6 - - 1 .2 2 .0 V C o lle c to r - B a s e C a p a c i ta nc e C CBO V C B = 1 0 V, I E = 0 , f = 1 MHz - - 8 .0 pF E m i tte r - B a s e C a p a c i ta nc e C EBO V C B = 0 . 5 V, IC = 0 , f= 1 M Hz - - 25 pF D e la y Ti m e td V C C = 3 V,V B E = - 5 V, I C = 1 5 0 mA ,IB = 1 5 mA - - 10 ns Ri s e Ti me tr V C C = 3 V,V B E = - 5 V, I C = 1 5 0 mA ,IB = 1 5 mA - - 25 ns S to ra g e Ti me ts V C C = 3 0 V,I C = 1 5 0 mA I B 1 = I B 2 = 1 5 mA - - 225 ns F a ll Ti m e tf V C C = 3 0 V,I C = 1 5 0 mA I B 1 = I B 2 = 1 5 mA - - 60 ns Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30V + 1 6V 1.0 to 1 00u s D uty C ycle ~ 2.0% +30V 200 W 200 W 1.0 to 100us Duty Cycle ~ 2.0% + 16V 0 -2 V < 2ns 1K W C * < 10pF S 0 Scope rise time < 4ns C S * < 10pF 1K W -14 V < 20ns 1N914 -4V * To t a l s h u n t c a p a c i t a n c e o f t e s t j i g , c o n n e c t o r s , a n d o s c i l l o s c o p e Fig. 1 Turn-On Time May 13.2010-REV.00 F i g . 2 T u r n - O ff T i m e PAGE . 2 MMBT2222AW ELECTRICAL CHARACTERISTICS CURVE 0.8 350 T J =150 oC 300 0.6 250 o V BE (on) T J =100 C h FE T J =25 oC 0.7 200 T J =25 oC 150 0.5 T J =100 oC o T J =150 C 0.4 0.3 100 0.2 V CE =10V 50 0 0.1 0.1 10 1 100 0.0 1000 V CE =10V 0.1 Collector Current, I C (mA) Fig. 1. Typical h FE vs Collector Current Fig. 2. Typical BE V 10 100 1000 vs Collector Current 1.2 500 I C / I B =10 450 400 I C / I B =10 350 1.0 T J =150 oC V BE (sat) (V) V CE (sat)(mV) 1 Collector Current, I C (mA) 300 250 200 150 0.8 T J =25 oC 0.6 o T J =150 C 0.4 T J =100 oC 100 0.2 o T J =25 C 50 0 0.1 10 1 100 1000 Collector Current, I C (mA) Fig. 3. TypicalCE V 0.0 0.1 1 10 100 1000 Collector Current, I C (mA) (sat) vs Collector Current Fig. 4. Typical V BE (sat) vs Collector Current Capacitance (pF) 100 f= 1 MHz C IB (EB) 10 C OB (CB) 1 0.1 1 10 100 Reverse Voltage, V R (V) Fig. 5. Typical Capacitances vs Reverse Voltage May 13.2010-REV.00 PAGE . 3 MMBT2222AW MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. May 13.2010-REV.00 PAGE . 4