DATA SHEET MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch (mm) FEATURES .119(3.00) .110(2.80) .103(2.60) • Collector current IC = 600mA • In compliance with EU RoHS 2002/95/EC directives .047(1.20) .056(1.40) • Collector-emitter voltage VCE = 40V .083(2.10) .066(1.70) MECHANICAL DATA .086(2.20) .007(.20)MIN • NPN epitaxial silicon, planar design .006(.15) .002(.05) .006(.15)MAX .020(.50) .013(.35) 3 COLLECTOR Top View Approx. Weight: 0.008 gram .035(0.90) Terminals: Solderable per MIL-STD-750, Method 2026 .044(1.10) Case: SOT-23, Plastic 3 Collector Marking: M2A 1 BASE 1 Base 2 Emitter 2 EMITTER ABSOLUTE RATINGS PA R A M E TE R S ym bol Value U nits C ollector-E m itterVoltage V C EO 40 V C ollector-B ase Voltage V C BO 75 V E m itter-B ase Voltage V EBO 6.0 V IC 600 mA S ym bol Value U nits M ax P ow erD issipation (N ote 1) P TO T 225 mW Therm alR esistance ,Junction to A m bient RθJA 556 Junction Tem perature TJ -55 to 150 O C S torage Tem perature TISTG -55 to 150 O C C ollectorC urrent-C ontinuous THERMAL CHARACTERISTICS PA R A M E TE R O C /W Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. REV.0-JUN.21.2005 PAGE . 1 ELECTRICAL CHARACTERISTICS PA RA M E TE R S ym b o l Te s t C o n d i t i o n M IN . T YP. MA X . U ni t s C o lle c to r - E mi tte r B re a k d o wn Vo lta g e V (B R) C E O IC = 1 . 0 m A , IB = 0 40 - - V C o lle c to r - B a s e B re a k d o wn Vo lta g e V (B R) C B O IC = 1 0 u A , IE = 0 75 - - V E mi tte r - B a s e B re a k d o wn Vo lta g e V (B R) E B O IE = 1 0 u A , IC = 0 6 .0 - - V B a s e C ut o f f C ur r e nt IB L V C E =6 0 V, V E B =3 .0 V - - 20 nA IC E X V C E =6 0 V, V E B =3 .0 V - - 10 nA IC B O V C E = 6 0 V , IE = 0 , V C E = 6 0 V , IE = 0 , T J = 1 2 5 O C - - 10 10 nA uA IE B O V E B = 3 . 0 V , IC = 0 , - - 100 nA hF E IC = 0 . 1 m A , V C E = 1 0 V IC = 1 . 0 m A , V C E = 1 0 V IC = 1 0 m A , V C E = 1 0 V IC = 1 0 m A , V C E = 1 0 V , T J = 1 2 5 O C IC = 1 5 0 m A , V C E = 1 0 V ( N o t e 2 ) IC = 1 5 0 m A , V C E = 1 V ( N o t e 2 ) IC = 5 0 0 m A , V C E = 1 0 V ( N o t e 2 ) 35 50 75 35 100 50 40 - 300 - - C o l l e c t o r C ut o f f C ur r e nt E m i t t e r C ut o f f C ur r e nt D C C ur r e nt G a i n C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e (No te 2 ) V C E (S AT) IC = 1 5 0 m A , IB = 1 5 m A IC = 5 0 0 m A , IB = 5 0 m A - - 0 .3 1 .0 V B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e (No te 2 ) V B E (S AT) IC = 1 5 0 m A , IB = 1 5 m A IC = 5 0 0 m A , IB = 5 0 m A 0 .6 - - 1 .2 2 .0 V C o l l e c t o r - B a s e C a p a c i t a nc e C CBO V C B = 1 0 V , IE = 0 , f = 1 M H z - - 8 .0 pF E m i t t e r - B a s e C a p a c i t a nc e C EBO V C B = 0 . 5 V , IC = 0 , f = 1 M H z - - 25 pF D e l a y Ti m e td V C C =3 V,V B E =-5 V, IC = 1 5 0 m A , IB = 1 5 m A - - 10 ns R i s e Ti m e tr V C C =3 V,V B E =-5 V, IC = 1 5 0 m A , IB = 1 5 m A - - 25 ns S t o r a g e Ti m e ts V C C = 3 0 V , IC = 1 5 0 m A IB 1 = IB 2 = 1 5 m A - - 225 ns F a l l Ti m e tf V C C = 3 0 V , IC = 1 5 0 m A IB 1 = IB 2 = 1 5 m A - - 60 ns Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30V +30V 1.0 to 100us Duty Cycle ~ 2.0% +16V 200Ω 200Ω 1.0 to 100us Duty Cycle ~ 2.0% +16V 0 0 -2V < 2ns 1KΩ CS* < 10pF Scope rise time < 4ns CS* < 10pF 1KΩ -14V < 20ns 1N914 -4V * Total shunt capacitance of test jig, connectors, and oscilloscope Fig. 1. REV.0-JUN.21.2005 Turn-On Time Fig. 2. Turn-Off Time PAGE . 2 ELECTRICAL CHARACTERISTICS CURVE 350 0.8 TJ = 150˚ C 300 0.6 250 TJ = 100˚ C V BE (on) TJ = 25˚ C 150 TJ = 100˚ C 0.5 200 hFE TJ = 25˚ C 0.7 0.4 TJ = 150˚ C 0.3 100 0.2 VCE = 10V 50 VCE = 10V 0.1 0 0.0 0.1 1 10 100 1000 0.1 1 Collector Current, IC (mA) 100 1000 Collector Current, IC (mA) Fig. 3. Typical hFE vs Collector Current Fig. 4. Typical VBE vs Collector Current 500 1.2 450 TJ = 150 ˚C IC/IB = 10 1.0 400 350 0.8 IC/IB = 10 300 V BE (sat) (V) VCE (sat) (mV) 10 250 200 TJ = 25 ˚C 0.6 TJ = 150 ˚C 0.4 150 100 0.2 50 TJ = 100 ˚C TJ = 25 ˚C 0 0.0 0.1 1 10 100 1000 0.1 Collector Current, IC (mA) 1 10 100 1000 Collector Current, IC (mA) Fig. 5. Typical VCE (sat) vs Collector Current Fig. 6. Typical VBE (sat) vs Collector Current 100 Capacitance (pF) f=1 MHz CIB (EB) 10 COB (CB) 1 0.1 1 10 100 Reverse Voltage, VR (V) Fig. 7. Typical Capacitances vs Reverse Voltage REV.0-JUN.21.2005 PAGE . 3 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2008 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0-JUN.21.2005 PAGE . 4