MMBT4403W PNP GENERAL PURPOSE SWITCHING TRANSISTOR 40V POWER 200mW SOT-323 Unit: inch (mm) PNP epitaxial silicon, planar design .004(.10)MIN. FEATURES .087(2.2) .070(1.8) Collector-emitter voltage VCE = -40V .087(2.2) .078(2.0) VOLTAGE .054(1.35) .045(1.15) Collector current IC =-600mA Complimentary (NPN) device: MMBT4401W .006(.15) .002(.05) .056(1.40) .047(1.20) In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA .004(.10)MAX. Terminals: Solderable per MIL-STD-750, Method 2026 .016(.40) .008(.20) Approx Weight: 0.005gram .044(1.1) .035(0.9) Case: SOT-323 Marking: M3W 3 COLLECTOR Top View 3 Collector 1 BASE 1 Base 2 EMITTER 2 Emitter ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector - Emitter Voltage VCE0 -40 V Collector - Base Voltage VCB0 -40 V Emitter – Base Voltage VEB0 -5.0 V Collector Current - Continuous IC -600 mA Max Power Dissipation (Note 1) PTOT 200 mW TJ, TSTG -55 to 150 ℃ PARAMETER SYMBOL VALUE UNIT Thermal Resistance , Junction to Ambient (Note 1) RθJ A 625 ℃/W Junction and Storage Temperature Range THERMAL CHARACTERISTICS Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. using minimum recommended pad. REV.0.1-MAR.5.2009 PAGE . 1 MMBT4403W ELECTRICAL CHARACTERISTICS (TJ = 25˚C, unless otherwise noted) PARAMETER SYMBOL Test Condition MIN. TYP. MAX. UNIT Collector - Emitter Breakdown Voltage V(BR)CEO IC=-1.0mA, IB=0 -40 - - V Collector - Base Breakdown Voltage V(BR)CBO IC=-100uA, IE=0 -40 - - V Emitter - Base Breakdown Voltage V(BR)EBO IE=-100uA, IC=0 -5.0 - - V Base Cutoff Current IBEV VCE=-35V, VEB=-0.4V - - -100 nA Collector Cutoff Current ICEX VCE=-35V, VEB=-0.4V - - -100 nA IC=-0.1mA, VCE=-1.0V 30 - - IC=-1.0mA, VCE=-1.0V 60 - - IC=-10mA, VCE=-1.0V 100 - - IC=-150mA, VCE=-2.0V 100 - 300 IC=-500mA, VCE=-2.0V 20 - - IC=-150mA, IB=-15 mA - - -0.4 IC=-500mA, IB=-50mA - - -0.75 IC=-150mA, IB=-15mA -0.75 - -0.95 IC=-500mA, IB=-50mA - - -1.3 200 - - MHz DC Current Gain hFE Collector - Emitter Saturation Voltage VCE(SAT) Base - Emitter Saturation Voltage VBE(SAT) Current-Gain – Bandwidth Product fT IC=-20mA, VCE=-10V, f=100MHz - V V Collector - Base Capacitance CCBO VCB=-5.0V, IE=0, f=1MHz - - 8.5 pF Emitter - Base Capacitance CEBO VCB=-0.5V, IC=0, f=1MHz - - 30 pF Delay Time td VCC=-30V, VBE=-2.0V, - - 15 ns Rise Time tr IC=-150mA, IB1=-15mA - - 20 ns Storage Time ts VCC=-30V, IC=-150mA, - - 225 ns Fall Time tf IB1=IB2=15mA - - 30 ns SWITCHING TIME EQUIVALENT TEST CIRCUITS -30V -30V 200Ω < 2ns 0 200Ω <20ns +14V 1.0KΩ +2V CS < 10pF -16V 1N916 1 to 100us Duty Cycle ~ 2.0% Duty Cycle = 2.0% REV.0.1-MAR.5.2009 Turn-On Time CS < 10pF -16V 10 to 100ns Fig. 1. 1.0KΩ 0 1N916 +4V Fig. 2. Turn-Off Time PAGE . 2 MMBT4403W ELECTRICAL CHARACTERISTICS CURVES 0.900 400 TJ = 150 ˚C 350 TJ = 25˚C 0.700 300 TJ = 100 ˚C VBE(on) hFE 0.800 VCE = 10V 250 200 TJ = 25 ˚C 0.600 TJ = 100˚C 0.500 0.400 150 TJ =150˚C 0.300 100 0.200 0.1 1 10 100 1000 0.1 Collector Current, IC (mA) 10 100 1000 Collector Current, IC (mA) Fig. 3. Typical hFE vs Collector Current Fig. 4. Typical VBE vs Collector Current 100 0.500 IC/IB = 10 0.450 0.400 CIB (EB) Capacitance (pF) 0.350 VCE(sat) 1 0.300 0.250 0.200 TJ = 150˚C 0.150 10 COB (CB) 0.100 0.050 TJ = 25˚C 1 0.000 0.1 1 10 100 1000 Collector Current, IC (mA) Fig. 5. Typical VCE (sat) vs Collector Current REV.0.1-MAR.5.2009 0.1 1 10 100 Reverse Voltage (V) Fig. 6. Typical Capacitances vs Reverse Voltage PAGE . 3 MMBT4403W MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.1-MAR.5.2009 PAGE . 4