PANJIT MMBT3906FN3

MMBT3906FN3
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
250 mWatts
POWER
0.042(1.05)
0.037(0.95)
0.026(0.65)
0.021(0.55)
FEATURES
Unit : inch(mm)
DFN 3L
0.0 22 (0.55)
0.047(0.45)
• Collector current IC = -200mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: DFN 3L, Plastic
0.014(0.36)
0.013(0.32)
0.008(0.22)
Terminals: Solderable per MIL-STD-750, Method 2026
Marking: AD
3
0.002(0.05) MAX.
2
1
0.013(0.32)
0.008(0.22)
0.004(0.10)
• Collector-emitter voltage VCE = -40V
0.008 (0.20)
0.004(0.10) 0.008 (0.20)
• PNP epitaxial silicon, planar design
0.014(0.20)
40 Volts
0.022(0.55)
0.047(0.45)
VOLTAGE
ABSOLUTE RATINGS
Parameter
Symbol
Value
Units
Collector - E mitter Voltage
VCEO
-40
V
Collector - B ase Voltage
VCBO
-40
V
Emitter - B ase Voltage
VEBO
-5.0
V
IC
-200
mA
Symbol
Value
Units
Max Power Dissipation (Note 1)
PTOT
250
mW
Thermal Resistance , Junction to Ambient
RJA
500
J unc ti o n Te m p e r a tur e
TJ
-5 5 t o + 1 5 0
O
S to r a g e Te m p e r a tur e
T S TG
-5 5 t o + 1 5 0
O
Collector Current - C ontinuous
THERMAL CHARACTERISTICS
Parameter
C/W
O
C
C
Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm.
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.0.2-JUL.18.2009
PAGE . 1
MMBT3906FN3
ELECTRICAL CHARACTERISTICS TA=25oC
P a r a me te r
S ymb o l
MIN.
TYP.
MA X .
Uni ts
V ( B R) C E O IC =- 1 .0 mA , IB =0
-40
-
-
V
C o lle c to r - B a s e B r e a k d o wn
Vo lta g e
V ( B R) C B O IC =- 1 0 uA , IE = 0
-40
-
-
V
E mi tte r - B a s e B re a k d o wn Vo lta g e
V (B R) E B O
- 5 .0
-
-
V
C o lle c to r - E mi tte r B r e a k d o wn
Vo lta g e
B a s e C uto ff C urre nt
C o lle c t o r C uto ff C ur r e nt
D C C ur r e nt G a i n ( No te 2 )
Te s t C o nd i ti o n
IE =- 1 0 uA , IC = 0
IB L
V C E = -3 0 V, V E B =- 3 .0 V
-
-
-5 0
nA
IC E X
V C E = -3 0 V, V E B =- 3 .0 V
-
-
-5 0
nA
hF E
IC = - 0 .1 mA , V C E = -1 .0 V
IC = - 1 .0 mA , V C E = -1 .0 V
IC =- 1 0 mA , V C E = -1 .0 V
IC = - 5 0 mA , V C E = -1 .0 V
IC = - 1 0 0 mA , V C E = - 1 .0 V
60
80
100
60
30
-
300
-
-
C o lle c t o r - E mi t t e r S a t ur a t i o n
Vo lta g e ( No te 2 )
V C E (S AT)
IC = - 1 0 mA , IB = -1 .0 mA
IC = - 5 0 mA , IB = -5 .0 mA
-
-
-0 .2 5
-0 .4
V
B a s e - E mi tte r S a tura ti o n Vo lta g e
( No te 2 )
V B E (S AT)
IC = - 1 0 mA , IB = -1 .0 mA
IC = - 5 0 mA , IB = -5 .0 mA
-0.65
-
-
-0 .8 5
-0 .9 5
V
C o lle c to r - B a s e C a p a c i ta nc e
C CBO
V C B = -5 V, IE = 0 , f = 1 MHz
-
-
4 .5
pF
E mi tte r - B a s e C a p a c i t a nc e
C EBO
V E B = - 0 .5 V, IC = 0 , f= 1 MHz
-
-
10
pF
D e la y Ti me
td
V C C = -3 V,V B E =- 0 .5 V,
IC = -1 0 mA ,I B =- 1 .0 mA
-
-
35
ns
Ri s e Ti me
tr
V C C = -3 V,V B E =- 0 .5 V,
IC = -1 0 mA ,I B =- 1 .0 mA
-
-
35
ns
S to r a g e Ti me
ts
V C C = -3 V,IC =- 1 0 mA
IB 1 =IB 2 =- 1 .0 mA
-
-
225
ns
F a ll Ti me
tf
V C C = -3 V,IC =- 1 0 mA
IB 1 =IB 2 =- 1 .0 mA
-
-
75
ns
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
3V
27 5 Ω
< 1ns
0
10K Ω
0 .5V
CS* < 4pF
-1 0.9 V
1N916
30 0 n s
D u ty C yc le ~ 2 .0%
D e la y a n d R is e T im e E q u iv a le n t T e s t C irc u it
3V
275Ω
275
< 1ns
+9.1V
10KΩ
10K
0
CSS** << 4pF
4pF
C
-10.9V
1N916
10 to 500us
Duty Cycle ~ 2.0%
Storage and Fall Time Equivalent Test Circuit
REV.0.2-JUL.18.2009
PAGE . 2
ELECTRICAL CHARACTERISTICS CURVE
1.2
300
TJ = 150˚ C
VCE = 1V
250
1.0
0.8
TJ = 100˚ C
TJ = 25˚ C
-VBE (V)
hFE
200
150
TJ = 25˚ C
100
0.6
TJ = 100˚ C
TJ = 150˚ C
0.4
50
0.2
VCE = 1V
0
0.01
0.1
1
10
100
0.0
0.01
1000
0.1
1
10
100
1000
Collector Current, -IC (mA)
Collector Current, -IC (mA)
Fig. 1. Typical hFE vs. Collector Current
Fig. 2. Typical VBE vs. Collector Current
1.00
1.000
IC/IB = 10
TJ = 25˚ C
0.10
TJ = 150˚ C
-VBE(sat) (V
-VCE(sat) (V)
TJ = 100˚
TJ = 150˚
TJ = 25˚
IC/IB = 10
0.01
0.01
0.1
1
10
100
1000
0.100
0.01
0.1
Collector Current, -IC (mA)
Fig. 3. Typical VCE (sat) vs. Collector Current
1
10
100
Collector Current, -I C (mA)
Fig. 4. Typical VBE (sat) vs. Collector Current
10
Capacitance (pF)
CIB (EB)
COB (CB)
1
-0.1
-1
Reverse Voltage, V
-10
R
-100
(V)
Fig. 5. Typical Capacitances vs. Reverse Voltage
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PAGE . 3
MMBT3906FN3
MOUNTING PAD LAYOUT
DFN 3L
0.043
(1.10)
0.010
(0.26)
0.010
(0.25)
0.024
(0.60)
0.02 8
(0.70)
0.004
(0.10)
0.017
(0.42)
0.02 7
(0.68)
ORDER INFORMATION
• Packing information
T/R - 8K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.2-JUL.18.2009
PAGE . 4