PANJIT MMBT2907AW

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Part Number:: MMBT2907AW
MMBT2907AW
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
POWER
60 Volts
225 mW
SOT-323
Unit: inch (mm)
FEATURES
.087(2.2)
.070(1.8)
Collector current IC = -600mA
In compliance with EU RoHS 2002/95/EC directives and with Halogen
.087(2.2)
.078(2.0)
Collector-emitter voltage VCE = -60V
.004(.10)MIN.
PNP epitaxial silicon, planar design
.054(1.35)
.045(1.15)
Free
.006(.15)
.002(.05)
.056(1.40)
.047(1.20)
MECHANICAL DATA
Case: SOT-323
.016(.40)
.008(.20)
Terminals : Solderable per MIL-STD-750,Method 2026
.044(1.1)
.035(0.9)
.004(.10)MAX.
Approx Weight: 0.0048 gram
Device Marking : M7A
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
Collector-Emitter Voltage
VC E O
-60
V
Collector-Base Voltage
VC B O
-60
V
Emitter-Base Voltage
VE B O
-5.0
V
IC
-600
mA
Symbol
Value
Units
Max Power Dissipation (Note 1)
PT O T
225
mW
Storage Temperature
TS T G
-55 to 150
O
C
Junction Temperaure
TJ
-55 to 150
O
C
RΘ J A
556
Collector Current-Continuous
THERMAL CHATACTERISTICS
Parameter
Thermal Resistance, Junction to Ambient
O
C/W
Note 1 : Transistor mouted on FR-5 board 1.0 x 0.75 x 0.062 in.
STAD-JUL.13.2006
PAGE . 1
Approve Sheet
Part Number:: MMBT2907AW
MMBT2907AW
ELECTRICAL CHARACTERISTICS
Parameter
(TJ=25OC, unless otherwise noted)
Symbol
Test Condition
Min.
Typ.
Max.
Units
Collector-Emitter Breakdown Voltage
V(B R )C EO
IC =-10mA,IB =0
-60
-
-
V
Collector-Base Breakdown Voltage
V(B R )C BO
IC =-10µA,IE =0
-60
-
-
V
Emitter-Base Breakdown Voltage
V(B R )EBO
IE =-10µA,IC =0
-5.0
-
-
V
IB L
VC E =-30V,VE B =-0.5V
-
-
-50
nA
IC E X
VC E =-30V,VE B =-0.5V
-
-
-50
nA
VC E =-50V,IE =0
-
-
-10
nA
VC E =-50V,IE =0
TJ =125O C
-
-
-10
µA
hF E
IC =-0.1mA,VC E =-10V
IC =-1.0mA,VC E =-10V
IC =-10mA,VC E =-10V
IC =-150mA,VC E =-10V
IC =-500mA,VC E =-10V
75
100
100
100
50
-
300
-
-
Collector-Emitter Saturation Voltage
VC E (S A T )
IC =-150mA,IB =-15mA
IC =-500mA,IB =-50mA
-
-
-0.4
-1.6
V
Base-Emitter Saturation Voltage
VB E (S A T )
IC =-150mA,IB =-15mA
IC =-500mA,IB =-50mA
-
-
-1.3
-2.6
V
Collector-Base Capacitance
CC B O
VC B =-10V,IE =0,f=1MHz
-
-
8.0
pF
Emitter-Base Capacitance
CE B O
VC B =-2V,IC =0,f=1MHz
-
-
30
pF
Current Gain-Bandwidth Product
FT
IC =-50mA,VC E =-20V,
f=100MHz
200
-
-
MHz
Turn-On Time
to n
VC C =-30V,VB E =-0.5V,
IC =-150mA,IB =-15mA
-
-
45
ns
Delay Time
td
VC C =-30V,VB E =-0.5V,
IC =-150mA,IB =-15mA
-
-
10
ns
Rise Time
tr
VC C =-30V,VB E =-0.5V,
IC =-150mA,IB 1 =-15mA
-
-
40
ns
Turn-Off Time
to ff
VC C =-6V,IC =-150mA,
IB 1 =IB 2 =-15mA
-
-
100
ns
Storage Time
ts
VC C =-6V,IC =-150mA,
IB 1 =IB 2 =-15mA
-
-
80
ns
Fall Time
tf
VC C =-6V,IC =-150mA,
IB 1 =IB 2 =-15mA
-
-
30
ns
Base Cutoff Current
Collector Cutoff Current
IC B O
DC Current Gain
STAD-JUL.13.2006
PAGE . 2
Approve Sheet
Part Number:: MMBT2907AW
MMBT2907AW
h FE, NORMALIZED CUTTENT GAIN
3.0
VCE=-1.0V
VCE=-10V
2.0
O
T J=125 C
O
25 C
1.0
-55 OC
0.7
0.5
0.3
0.2
-0.1
-0.2 -0.3
-0.5 -0.7 -1.0
-2.0 -3.0
-5.0 -7.0 -10
-20
-30
-50 -70 -100
-200 -300
-500
I C, COLLECTOR CURRENT (mA)
Fig.1-DC Cuttent Gain
V CE, COLLECTOR-EMITTER
VOLTAGE (VOLTS)
-1.0
-0.8
I C=-1.0mA
-10mA
-100mA
-500mA
-0.6
-0.4
-0.2
0
-0.005 -0.01
-0.02 -0.03 -0.05-0.07 -0.1
-0.2 -0.3
-0.5 -0.7 -1.0
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
-50
I B, BASE CUTTENT (mA)
Fig.2-Collector Saturation Region
500
tr
300
V CC=-30V
I C/I B=10
T J=25 OC
100
70
50
30
20
10
7.0
5.0
td@V BE(OFF)=0V
3.0
-5.0 -7.0 -10
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2.0V
-20 -30 -50 -70 -100
-200 -300 -500
I C, COLLECTOR CURRENT
Fig.3-Turn-On Time
V CC=-30V
I C/I B=10
I B1=I B2
T J=25 OC
tf
200
t, TIME (ns)
t, TIME (ns)
300
200
100
70
50
30
t ,s=t s-1/8t f
20
10
7.0
5.0
-5.0 -7.0 -10
-20 -30 -50 -70 -100
-200-300 -500
I C,COLLECTOR CURRENT (mA)
Fig.4-Turn-Off Time
PAGE . 3
Approve Sheet
Part Number:: MMBT2907AW
MMBT2907AW
10
10
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
f=1.0kHz
8.0
I C=-1.0mA,R S=430 W
-500 m A,R S=560 W
-50 m A,R =2.7k W
-100 m A,R =1.6 W
6.0
4.0
R S=OPTIMUM SOURCE RESISANCE
2.0
0
0.01 0.02
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
8.0
I C=-50 m A
-100 m A
-500 m A
-1.0mA
6.0
4.0
2.0
100
0
50 100
f,FREQUENCY (kHz)
200
500 1.0k 2.0k 5.0k 10k 20k
R S, SOURGE RESISTANCE (OHMS)
Fig.5-Frequency Effects
Fig.6-Source Resistance Effects
400
C eb
20
10
7.0
C cb
5.0
3.0
-0.2 -0.3 -0.5
-1.0
- 2 . 0- 3 . 0 - 5 . 0
-10
f T , CURREN T-GAIN- BANDW IDTH
PRODU CT (MHz)
C,CAPACITANCE (pF)
30
2.0
-0.1
300
200
100
80
40
30
-5.0
-10 -20
-50 -100 -200
-500-1000
I C, COLLECTOR CUTTENT (mA)
Fig.7-Capacitances
Fig.8-Current-Gain-Bandwidth Product
-1.0
+0.5
T J=25 C
V BE(sat)@I C/I B=10
0
V BE(on)@V CE=-10V
-0.6
-0.4
-0.2
V CE(sat)@ I C/I B=10
0
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20
- 5 0 - 1 0 0- 2 0 0 - 5 0 0
I C,COLLECTOR CURRENT (mA)
Fig.9-On Voltage
STAD-JUL.13.2006
O
COEFFICIEN T (mV/ C)
O
V,VOLTAGE (VOLTS)
V CE=-20V
O
T J=25 C
60
20
-1.0 -2.0
-20 -30
REVERSE VOLTAGE (VOLTS)
-0.8
50k
R QVC for V CE(sat)
-0.5
-1.0
-1.5
-2.0
R QVB for V BE
-2.5
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
I C,COLLECTOR CUTTENT (mA)
Fig.10-Temperature Coefficients
PAGE . 4
Approve Sheet
Part Number:: MMBT2907AW
MMBT2907AW
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
systems. Pan Jit does not convey any license under its patent rights or rights of others.
STAD-JUL.13.2006
PAGE . 5