Approve Sheet Part Number:: MMBT2907AW MMBT2907AW PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 60 Volts 225 mW SOT-323 Unit: inch (mm) FEATURES .087(2.2) .070(1.8) Collector current IC = -600mA In compliance with EU RoHS 2002/95/EC directives and with Halogen .087(2.2) .078(2.0) Collector-emitter voltage VCE = -60V .004(.10)MIN. PNP epitaxial silicon, planar design .054(1.35) .045(1.15) Free .006(.15) .002(.05) .056(1.40) .047(1.20) MECHANICAL DATA Case: SOT-323 .016(.40) .008(.20) Terminals : Solderable per MIL-STD-750,Method 2026 .044(1.1) .035(0.9) .004(.10)MAX. Approx Weight: 0.0048 gram Device Marking : M7A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Units Collector-Emitter Voltage VC E O -60 V Collector-Base Voltage VC B O -60 V Emitter-Base Voltage VE B O -5.0 V IC -600 mA Symbol Value Units Max Power Dissipation (Note 1) PT O T 225 mW Storage Temperature TS T G -55 to 150 O C Junction Temperaure TJ -55 to 150 O C RΘ J A 556 Collector Current-Continuous THERMAL CHATACTERISTICS Parameter Thermal Resistance, Junction to Ambient O C/W Note 1 : Transistor mouted on FR-5 board 1.0 x 0.75 x 0.062 in. STAD-JUL.13.2006 PAGE . 1 Approve Sheet Part Number:: MMBT2907AW MMBT2907AW ELECTRICAL CHARACTERISTICS Parameter (TJ=25OC, unless otherwise noted) Symbol Test Condition Min. Typ. Max. Units Collector-Emitter Breakdown Voltage V(B R )C EO IC =-10mA,IB =0 -60 - - V Collector-Base Breakdown Voltage V(B R )C BO IC =-10µA,IE =0 -60 - - V Emitter-Base Breakdown Voltage V(B R )EBO IE =-10µA,IC =0 -5.0 - - V IB L VC E =-30V,VE B =-0.5V - - -50 nA IC E X VC E =-30V,VE B =-0.5V - - -50 nA VC E =-50V,IE =0 - - -10 nA VC E =-50V,IE =0 TJ =125O C - - -10 µA hF E IC =-0.1mA,VC E =-10V IC =-1.0mA,VC E =-10V IC =-10mA,VC E =-10V IC =-150mA,VC E =-10V IC =-500mA,VC E =-10V 75 100 100 100 50 - 300 - - Collector-Emitter Saturation Voltage VC E (S A T ) IC =-150mA,IB =-15mA IC =-500mA,IB =-50mA - - -0.4 -1.6 V Base-Emitter Saturation Voltage VB E (S A T ) IC =-150mA,IB =-15mA IC =-500mA,IB =-50mA - - -1.3 -2.6 V Collector-Base Capacitance CC B O VC B =-10V,IE =0,f=1MHz - - 8.0 pF Emitter-Base Capacitance CE B O VC B =-2V,IC =0,f=1MHz - - 30 pF Current Gain-Bandwidth Product FT IC =-50mA,VC E =-20V, f=100MHz 200 - - MHz Turn-On Time to n VC C =-30V,VB E =-0.5V, IC =-150mA,IB =-15mA - - 45 ns Delay Time td VC C =-30V,VB E =-0.5V, IC =-150mA,IB =-15mA - - 10 ns Rise Time tr VC C =-30V,VB E =-0.5V, IC =-150mA,IB 1 =-15mA - - 40 ns Turn-Off Time to ff VC C =-6V,IC =-150mA, IB 1 =IB 2 =-15mA - - 100 ns Storage Time ts VC C =-6V,IC =-150mA, IB 1 =IB 2 =-15mA - - 80 ns Fall Time tf VC C =-6V,IC =-150mA, IB 1 =IB 2 =-15mA - - 30 ns Base Cutoff Current Collector Cutoff Current IC B O DC Current Gain STAD-JUL.13.2006 PAGE . 2 Approve Sheet Part Number:: MMBT2907AW MMBT2907AW h FE, NORMALIZED CUTTENT GAIN 3.0 VCE=-1.0V VCE=-10V 2.0 O T J=125 C O 25 C 1.0 -55 OC 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 I C, COLLECTOR CURRENT (mA) Fig.1-DC Cuttent Gain V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 -0.8 I C=-1.0mA -10mA -100mA -500mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05-0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 I B, BASE CUTTENT (mA) Fig.2-Collector Saturation Region 500 tr 300 V CC=-30V I C/I B=10 T J=25 OC 100 70 50 30 20 10 7.0 5.0 td@V BE(OFF)=0V 3.0 -5.0 -7.0 -10 STAD-JUL.13.2006 2.0V -20 -30 -50 -70 -100 -200 -300 -500 I C, COLLECTOR CURRENT Fig.3-Turn-On Time V CC=-30V I C/I B=10 I B1=I B2 T J=25 OC tf 200 t, TIME (ns) t, TIME (ns) 300 200 100 70 50 30 t ,s=t s-1/8t f 20 10 7.0 5.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200-300 -500 I C,COLLECTOR CURRENT (mA) Fig.4-Turn-Off Time PAGE . 3 Approve Sheet Part Number:: MMBT2907AW MMBT2907AW 10 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) f=1.0kHz 8.0 I C=-1.0mA,R S=430 W -500 m A,R S=560 W -50 m A,R =2.7k W -100 m A,R =1.6 W 6.0 4.0 R S=OPTIMUM SOURCE RESISANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 8.0 I C=-50 m A -100 m A -500 m A -1.0mA 6.0 4.0 2.0 100 0 50 100 f,FREQUENCY (kHz) 200 500 1.0k 2.0k 5.0k 10k 20k R S, SOURGE RESISTANCE (OHMS) Fig.5-Frequency Effects Fig.6-Source Resistance Effects 400 C eb 20 10 7.0 C cb 5.0 3.0 -0.2 -0.3 -0.5 -1.0 - 2 . 0- 3 . 0 - 5 . 0 -10 f T , CURREN T-GAIN- BANDW IDTH PRODU CT (MHz) C,CAPACITANCE (pF) 30 2.0 -0.1 300 200 100 80 40 30 -5.0 -10 -20 -50 -100 -200 -500-1000 I C, COLLECTOR CUTTENT (mA) Fig.7-Capacitances Fig.8-Current-Gain-Bandwidth Product -1.0 +0.5 T J=25 C V BE(sat)@I C/I B=10 0 V BE(on)@V CE=-10V -0.6 -0.4 -0.2 V CE(sat)@ I C/I B=10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 - 5 0 - 1 0 0- 2 0 0 - 5 0 0 I C,COLLECTOR CURRENT (mA) Fig.9-On Voltage STAD-JUL.13.2006 O COEFFICIEN T (mV/ C) O V,VOLTAGE (VOLTS) V CE=-20V O T J=25 C 60 20 -1.0 -2.0 -20 -30 REVERSE VOLTAGE (VOLTS) -0.8 50k R QVC for V CE(sat) -0.5 -1.0 -1.5 -2.0 R QVB for V BE -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 I C,COLLECTOR CUTTENT (mA) Fig.10-Temperature Coefficients PAGE . 4 Approve Sheet Part Number:: MMBT2907AW MMBT2907AW MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUL.13.2006 PAGE . 5