MMBT2907A PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 60 Volts 225 mW SOT- 23 Unit: inch (mm) FEATURES .119(3.00) .110(2.80) .056(1.40) .103(2.60) Collector current IC = -600mA Pb free product are available : 99% Sn above can meet RoHS .047(1.20) Collector-emitter voltage VCE = -60V environment substance directive request MECHANICAL DATA .006(.15)MAX .020(.50) .013(.35) Case: SOT-23 .044(1.10) .006(.15) .002(.05) .035(0.90) .083(2.10) .066(1.70) .086(2.20) .007(.20)MIN PNP epitaxial silicon, planar design Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.008 grams Device Marking : M7A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Units Collector-Emitter Voltage VC E O -60 V Collector-Base Voltage VC B O -60 V Emitter-Base Voltage VE B O -5.0 V IC -600 mA Symbol Value Units Max Power Dissipation (Note 1) PT O T 225 mW Storage Temperature TS T G -55 to 150 O C Junction Temperaure TJ -55 to 150 O C RΘ J A 556 Collector Current-Continuous THERMAL CHATACTERISTICS Parameter Thermal Resistance, Junction to Ambient O C/W Note 1 : Transistor mouted on FR-5 board 1.0 x 0.75 x 0.062 in. REV.0-JUN.1.2005 PAGE . 1 MMBT2907A ELECTRICAL CHARACTERISTICS Parameter (TJ=25OC, unless otherwise noted) Symbol Test Condition Min. Typ. Max. Units Collector-Emitter Breakdown Voltage V(B R )C EO IC =-10mA,IB =0 -60 - - V Collector-Base Breakdown Voltage V(B R )C BO IC =-10µA,IE =0 -60 - - V Emitter-Base Breakdown Voltage V(B R )EBO IE =-10µA,IC =0 -5.0 - - V IB L VC E =-30V,VE B =-0.5V - - -50 nA IC E X VC E =-30V,VE B =-0.5V - - -50 nA VC E =-50V,IE =0 - - -10 nA VC E =-50V,IE =0 TJ =125O C - - -10 µA hF E IC =-0.1mA,VC E =-10V IC =-1.0mA,VC E =-10V IC =-10mA,VC E =-10V IC =-150mA,VC E =-10V IC =-500mA,VC E =-10V 75 100 100 100 50 - 300 - - Collector-Emitter Saturation Voltage VC E (S A T ) IC =-150mA,IB =-15mA IC =-500mA,IB =-50mA - - -0.4 -1.6 V Base-Emitter Saturation Voltage VB E (S A T ) IC =-150mA,IB =-15mA IC =-500mA,IB =-50mA - - -1.3 -2.6 V Collector-Base Capacitance CC B O VC B =-10V,IE =0,f=1MHz - - 8.0 pF Emitter-Base Capacitance CE B O VC B =-2V,IC =0,f=1MHz - - 30 pF Current Gain-Bandwidth Product FT IC =-50mA,VC E =-20V, f=100MHz 200 - - MHz Turn-On Time to n VC C =-30V,VB E =-0.5V, IC =-150mA,IB =-15mA - - 45 ns Delay Time td VC C =-30V,VB E =-0.5V, IC =-150mA,IB =-15mA - - 10 ns Rise Time tr VC C =-30V,VB E =-0.5V, IC =-150mA,IB 1 =-15mA - - 40 ns Turn-Off Time to ff VC C =-6V,IC =-150mA, IB 1 =IB 2 =-15mA - - 100 ns Storage Time ts VC C =-6V,IC =-150mA, IB 1 =IB 2 =-15mA - - 80 ns Fall Time tf VC C =-6V,IC =-150mA, IB 1 =IB 2 =-15mA - - 30 ns Base Cutoff Current Collector Cutoff Current IC B O DC Current Gain REV.0-JUN.1.2005 PAGE . 2 MMBT2907A h FE, NORMALIZED CUTTENT GAIN 3.0 VCE=-1.0V VCE=-10V 2.0 O T J=125 C O 25 C 1.0 O 0.7 -55 C 0.5 0.3 0.2 -0.1 -0.2 -0.3 -2.0 -3.0 -0.5 -0.7 -1.0 -5.0 -7.0 -10 -30 -20 -50 -70 -100 -200 -300 -500 I C, COLLECTOR CURRENT (mA) Fig.1-DC Cuttent Gain V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 -0.8 I C=-1.0mA -10mA -100mA -500mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05-0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 I B, BASE CUTTENT (mA) Fig.2-Collector Saturation Region 500 tr 300 V CC=-30V I C/I B=10 O T J=25 C 100 70 50 30 20 10 7.0 5.0 td@V BE(OFF)=0V 3.0 -5.0 -7.0 -10 REV.0-JUN.1.2005 2.0V -20 -30 -50 -70 -100 -200 -300 -500 I C, COLLECTOR CURRENT Fig.3-Turn-On Time V CC=-30V I C/I B=10 I B1=I B2 T J=25 OC tf 200 t, TIME (ns) t, TIME (ns) 300 200 100 70 50 30 , t s=t s-1/8t f 20 10 7.0 5.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200-300 -500 I C,COLLECTOR CURRENT (mA) Fig.4-Turn-Off Time PAGE . 3 MMBT2907A 10 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) f=1.0kHz 8.0 I C=-1.0mA,R S=430 W -500 m A,R S=560 W -50 m A,R =2.7k W -100 m A,R =1.6 W 6.0 4.0 R S=OPTIMUM SOURCE RESISANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 8.0 I C=-50 m A -100 m A -500 m A -1.0mA 6.0 4.0 2.0 100 0 50 100 f,FREQUENCY (kHz) 200 500 1.0k 2.0k 5.0k 10k 20k R S, SOURGE RESISTANCE (OHMS) Fig.5-Frequency Effects Fig.6-Source Resistance Effects 400 C eb 20 10 7.0 C cb 5.0 3.0 -0.2 -0.3 -0.5 -1.0 -2.0-3.0 -5.0 -10 f T , CURREN T-GAIN- BANDW IDTH PRODU CT (MHz) C,CAPACITANCE (pF) 30 2.0 -0.1 300 200 100 80 40 30 -5.0 -10 -20 -50 -100 -200 -500-1000 I C, COLLECTOR CUTTENT (mA) Fig.7-Capacitances Fig.8-Current-Gain-Bandwidth Product -1.0 +0.5 T J=25 C V BE(sat)@I C/I B=10 0 V BE(on)@V CE=-10V -0.6 -0.4 -0.2 V CE(sat)@ I C/I B=10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100-200 -500 I C,COLLECTOR CURRENT (mA) Fig.9-On Voltage REV.0-JUN.1.2005 O COEFFICIEN T (mV/ C) O V,VOLTAGE (VOLTS) V CE=-20V O T J=25 C 60 20 -1.0 -2.0 -20 -30 REVERSE VOLTAGE (VOLTS) -0.8 50k R QVC for V CE(sat) -0.5 -1.0 -1.5 -2.0 R QVB for V BE -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 I C,COLLECTOR CUTTENT (mA) Fig.10-Temperature Coefficients PAGE . 4 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. The information will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and product characterization are constantly in process. Therefore, the factory should be consulted for the most recent information and for any special characteristics not described or specified. Copyright Pan Jit International Inc. 2003 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract. The information presented is believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. STAD-AUG.06.2004 PAGE . 5