MMDT2907A DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 60 Volts POWER 150 mW 0.054(1.35) 0.045(1.15) • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -60V 0.030(0.75) 0.021(0.55) 0.087(2.20) 0.074(1.90) 0.056(1.40) 0.047(1.20) • Collector current IC = -600mA • In compliance with EU RoHS 2002/95/EC directives 0.012(0.30) 0.005(0.15) FEATURES MECHANICAL DATA • Case: SOT-363 4 • Apporx. Weight: 0.0002 ounce, 0.006 gram • Device Marking : M7A 0.018(0.45) 0.006(0.15) 1 2 0.040(1.00) 0.031(0.80) 0.044(1.10) MAX. 5 0.10 MAX. 0.087(2.20) 0.078(2.00) 0.010(0.25) 0.003(0.08) 6 0.010(0.25) • Terminals : Solderable per MIL-STD-750,Method 2026 3 Fig.53 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Units Collector-Emitter Voltage VCEO -60 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage V EBO -5.0 V IC -600 mA Symbol Value Units Max Power Dissipation (Note 1) P TOT 150 mW Thermal Resistance, Junction to Ambient RθJA 830 Storage Temperature TSTG -55 to +150 O Junction Temperaure TJ -55 to +150 O Collector Current-Continuous THERMAL CHATACTERISTICS Parameter O C/W C C Note 1 : Transistor mouted on FR-5 board 1.0 x 0.75 x 0.062 in. May 12.2010-REV.00 PAGE . 1 MMDT2907A ELECTRICAL CHARACTERISTICS Parameter (TJ=25OC, unless otherwise noted) Symbol Test Condition Min. Typ. Max. Units Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA,IB=0 -60 - - V Collector-Base Breakdown Voltage V(BR)CBO IC=-10μA,IE=0 -60 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10μA,IC=0 -5.0 - - V IBL V CE=-30V,VEB=-0.5V - - -50 nA ICEX V CE=-30V,VEB=-0.5V - - -50 nA VCE=-50V,IE=0 - - -10 nA - - -10 μA hFE IC=-0.1mA,VCE=-10V IC=-1.0mA,VCE=-10V IC=-10mA,VCE=-10V IC=-150mA,VCE=-10V IC=-500mA,VCE=-10V 75 100 100 100 50 - 300 - - Collector-Emitter Saturation Voltage VCE(SAT) IC=-150mA,IB=-15mA IC=-500mA,IB=-50mA - - -0.4 -1.6 V Base-Emitter Saturation Voltage VBE(SAT) IC=-150mA,IB=-15mA IC=-500mA,IB=-50mA - - -1.3 -2.6 V Collector-Base Capacitance C CBO VCB=-10V,IE=0,f=1MHz - - 8.0 pF Emitter-Base Capacitance C EBO V CB=-2V,IC=0,f=1MHz - - 30 pF Current Gain-Bandwidth Product FT IC=-50mA,VCE=-20V, f=100MHz 200 - - MHz Turn-On Time ton VCC=-30V,VBE=-0.5V, IC=-150mA,IB=-15mA - - 45 ns Delay Time td VCC=-30V,VBE=-0.5V, IC=-150mA,IB=-15mA - - 10 ns Rise Time tr VCC=-30V,VBE=-0.5V, IC=-150mA,IB1=-15mA - - 40 ns Turn-Off Time toff VCC=-6V,IC=-150mA, IB1=IB2=-15mA - - 100 ns Storage Time ts VCC=-6V,IC=-150mA, IB1=IB2=-15mA - - 80 ns Fall Time tf VCC=-6V,IC=-150mA, IB1=IB2=-15mA - - 30 ns Base Cutoff Current Collector Cutoff Current ICBO VCE=-50V,IE=0 DC Current Gain May 12.2010-REV.00 TJ=125OC PAGE . 2 MMDT2907A h FE, NORMALIZED CURRENT GAIN 3.0 VCE=-1.0V VCE=-10V 2.0 O T J=125 C 25 OC 1.0 O 0.7 -55 C 0.5 0.3 0.2 -0.1 -0.2 -0.3 -2.0 -3.0 -0.5 -0.7 -1.0 -5.0 -7.0 -10 -30 -20 -50 -70 -100 -200 -300 -500 I C, COLLECTOR CURRENT (mA) Fig.1-DC Cuttent Gain V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 -0.8 I C=-1.0mA -10mA -100mA -500mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05-0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -20 -30 -5.0 -7.0 -10 -50 I B, BASE CURRENT (mA) Fig.2-Collector Saturation Region 500 300 tr V CC=-30V I C/I B=10 O T J=25 C 100 70 50 30 20 10 7.0 5.0 td@V BE(OFF)=0V 3.0 -5.0 -7.0 -10 -20 -30 2.0V -50 -70 -100 -200 -300 -500 I C, COLLECTOR CURRENT Fig.3-Turn-On Time May 12.2010-REV.00 V CC=-30V I C/I B=10 I B1=I B2 T J=25 OC tf 200 100 t, TIME (ns) t, TIME (ns) 300 200 70 50 30 , t s=t s-1/8t f 20 10 7.0 5.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200-300 -500 I C, COLLECTOR CURRENT (mA) Fig.4-Turn-Off Time PAGE . 3 MMDT2907A 10 10 8.0 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) f=1.0kHz I C=-1.0mA,R S=430 W -500 m A,R S=560 W -50 m A,R S =2.7k W -100 m A,R S =1.6 k W 6.0 4.0 R S=OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 I C=-50 m A -100 m A -500 m A -1.0mA 6.0 4.0 2.0 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 50 100 100 Fig.5-Frequency Effects 10 7.0 C cb 5.0 3.0 -0.2 -0.3 -0.5 -1.0 -2.0-3.0 -5.0 -10 -20 -30 f T , CURRE NT-GAIN -BANDW IDTH PRODU CT (MHz) C, CAPACITA NCE (pF) 20k 50k 400 C eb 20 300 200 100 80 V CE=-20V O T J=25 C 60 40 30 20 -1.0 -2.0 REVERSE VOLTAGE (VOLTS) -5.0 -10 -20 -50 -100 -200 -500 -1000 I C, COLLECTOR CURRENT (mA) Fig.7-Capacitances Fig.8-Current-Gain-Bandwidth Product -1.0 +0.5 T J=25 C V BE(sat)@I C/I B=10 0 R QVC for V CE(sat) V BE(on)@V CE=-10V -0.6 O COEFFICIEN T (mV/ C) O V, VOLTAGE (VOLTS) 5.0k 10k Fig.6-Source Resistance Effects 30 -0.8 500 1.0k 2.0k R S, SURGE RESISTANCE (OHMS) f, FREQUENCY (kHz) 2.0 -0.1 200 -0.4 -0.2 V CE(sat)@ I C/I B=10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100-200 I C, COLLECTOR CURRENT (mA) Fig.9-On Voltage May 12.2010-REV.00 -500 -0.5 -1.0 -1.5 -2.0 R QVB for V BE -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 I C, COLLECTOR CURRENT (mA) Fig.10-Temperature Coefficients PAGE . 4 MMDT2907A MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. May 12.2010-REV.00 PAGE . 5