G S G S TO-92 SOT-23 D Mark: 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process 90. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 25 V VDG Drain-Gate Voltage VGS Gate-Source Voltage - 25 V IGF Forward Gate Current 10 mA TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Max Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient J210-212 350 2.8 125 *MMBFJ210-212 225 1.8 357 556 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation J210/J211/J212/MMBFJ210/J211/J212, Rev A J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 MMBFJ210 MMBFJ211 MMBFJ212 J210 J211 J212 5 (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units - 100 pA OFF CHARACTERISTICS V (BR)GSS Gate-Source Breakdown Voltage IG S S Gate Reverse Current I G = 1.0 µA, V DS = 0 V G S = 15 V, V D S = 0 V GS(off) Gate-Source Cutoff Voltage V D S = 15 V, I D = 1.0 nA 210 211 212 -1.0 - 2.5 - 4.0 -3.0 - 4.5 - 6.0 V V V V DS = 15 V, V GS = 0 210 211 212 2.0 7.0 15 15 20 40 mA mA mA 4000 6000 7000 12,000 12,000 12,000 200 µmhos µmhos µmhos µmhos - 25 V ON CHARACTERISTICS ID S S Zero-Gate Voltage Drain Current* SMALL SIGNAL CHARACTERISTICS g fs g oss Common Source Forward Transconductance Common Source Output Conductance V D S = 15 V, V G S = 0, f = 1.0 kHz 210 211 212 V D S = 15 V, V G S = 0, f = 1.0 kHz *Pulse Test: Pulse Width ≤ 300 µS Typical Characteristics Parameter Interactions Common Drain-Source J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier (continued) Typical Characteristics (continued) Transfer Characteristics Transfer Characteristics Leakage Current vs. Voltage Noise Voltage vs. Frequency J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier 5 Transconductance vs. Drain Current Output Conductance vs. Drain Current (continued) Typical Characteristics (continued) Capacitance vs. Voltage Input Admittance Output Admittance os) Common Source Characteristics Forward Transadmittance Reverse Transadmittance J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier (continued) Common Gate Characteristics Input Admittance Output Admittance Forward Transadmittance Reverse Transadmittance J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier 5 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H2