FAIRCHILD BF246B

BF246B N-Channel Switch
BF246B
N-Channel Switch
• This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers.
• Sourced from process 51.
• See J111 for characteristics.
TO-92
DGS
1. Drain 2. Gate 3. Source
Absolute Maximum Ratings*
Symbol
Ta = 25°C unless otherwise noted
Value
Units
VDG
Drain-Gate Voltage
Parameter
25
V
VGS
Gate-Source Voltage
-25
V
IGF
Forward Gate Current
50
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may e impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Symbol
Ta = 25°C unless otherwise noted
Parameter
Conditions
Min.
Max
Units
-5.0
nA
-0.6
-14.5
V
60
140
mA
Off Characteristics
V(BR)GSS
Gate-Source Breakdown Voltage
IG = 1.0µA, VDS = 0
IGSS
Gate Reverse Current
VGS = -15V, VDS = 0
VGS(off)
Gate-Source Cutoff Voltage
VDS = 15V, ID = 10nA
-25
V
On Characteristics*
IDSS
Zero-Gate Voltage Drain Current *
Thermal Characteristics T
a
Symbol
VDS = 15V, VGS = 0
= 25°C unless otherwise noted
Parameter
Value
Units
PD
Total Device Dissipation
625
5.0
mW
mW/°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
©2005 Fairchild Semiconductor Corporation
BF246B Rev. A
1
www.fairchildsemi.com
BF246B N-Channel Switch
Mechanical Dimensions
TO-92
Dimensions in Millimeters
BF246B Rev. A
2
www.fairchildsemi.com
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
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First Production
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Rev. I15
3
BF246B Rev. A
www.fairchildsemi.com
BF246B N-Channel Switch
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