TIS73 / TIS74 TIS73 TIS74 G S TO-92 D N-Channel General Purpose Amplifier This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 54. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage - 30 V IGF Forward Gate Current 10 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units TIS73 / TIS74 625 5.0 83.3 mW mW/°C °C/W 200 °C/W (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)GSS Gate-Source Breakdown Voltage I G = 1.0 µA, VDS = 0 IGSS Gate Reverse Current ID( off) Drain Cutoff Leakage Current VGS( off) Gate-Source Cutoff Voltage VGS = 15 V, VDS = 0 VGS = 15 V, VDS = 0, T A = 100°C VDS = 15 V, VGS = 10 V VDS = 15 V, VGS = 10 V, TA = 100°C VDS = 15 V, ID = 4.0 nA TIS73 TIS74 - 30 - 4.0 - 2.0 V - 2.0 - 5.0 - 2.0 - 5.0 - 10 - 6.0 nA µA nA µA V V 100 25 40 mA mA Ω Ω ON CHARACTERISTICS IDSS rDS(on) Zero-Gate Voltage Drain Current* Drain-Source On Resistance VDS = 15 V, VGS = 0 VDS ≤ 0.1 V, VGS = 0, f = 1.0 kHz 50 20 TIS73 TIS74 SMALL-SIGNAL CHARACTERISTICS Ciss Input Capacitance VDS = 0, VGS = 10 V, f = 1.0 MHz 18 pF Crss Reverse Transfer Capacitance VDS = 0, VGS = 10 V, f = 1.0 MHz 8.0 pF 3.0 4.0 ns ns 6.0 ns 25 50 ns ns SWITCHING CHARACTERISTICS Rise Time tr ton Turn-On Time toff Turn-Off Time *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 3.0% VGS( off) = 10 mA ,VGS( on) = 0, TIS73 I D = 20 mA, VDS = 10 V TIS74 VGS( off) = 10 mA ,VGS( on) = 0, I D = 20 mA, VDS = 10 V VGS( off) = 10 mA ,VGS( on) = 0, TIS73 I D = 20 mA, VDS = 10 V TIS74 TIS73 / TIS74 N-Channel General Purpose Amplifier (continued) Typical Characteristics Parametric Interaction rds ON -- DRAIN ON RESISTANCE ( IDSS - DRAIN CURRENT (mA) Ω ) Parametric Interaction IDSS @VDS=15V PULSE 20 10 5 1 2 3 5 7 V GS - GATE-SOURCE VOLTAGE (V) 10 20 10 5 1 f = 0.1-1.0MHz Cis (Crs) - CAPACITANCE (pf) gfs - TRANSCONDUCTANCE (mmhos) 10 Capacitance vs Voltage Parametric Interaction gfs @ VDS=15V VGS=0V 20 gfs @ VDS=15V ID=3mA 10 5 1 2 3 5 7 V GS - GATE-SOURCE VOLTAGE (V) 10 20 C is ( V DS 100 C 0 P D - POWER DISSIPATION (mW) -1V TYP VGS(OFF) = - 5V 60 0 -2V TA = + 25 C 40 -3V 20 0 -4V 0 rs (V DS = 0V ) 5 -2 -4 -6 -8 -10 -12 V GS - GATE-SOURCE VOLTAGE (V) -14 POWER DISSIPATION vs AMBIENT TEMPERATURE V GS = 0V 80 = 10 V ) 10 Common Drain-Source Characteristics I D - DRAIN CURRENT (mA) 2 3 5 7 V GS - GATE-SOURCE VOLTAGE (V) 2 4 6 8 V DS - DRAIN -SOURCE VOLTAGE (V) 10 700 600 TO-92 500 400 300 200 100 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 TIS73 / TIS74 N-Channel General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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