Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 0, 2/2011 RF LDMOS Wideband Integrated Power Amplifier The MD8IC970N wideband integrated circuit is designed with on--chip prematching that makes it usable from 136 to 940 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical base station modulation formats. This device has a 2--stage design with off--chip matching for the input, interstage and output networks to cover the desired frequency sub--band. • Typical Two--Tone Performance: VDD1 = 28 Volts, VDD2 = 25 Volts, IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA, Pout = 35 Watts Avg. Frequency Gps (dB) PAE (%) IMD (dBc) 850 MHz 30.6 40.1 --30.5 900 MHz 31.9 42.4 --31.0 940 MHz 32.6 42.1 --31.3 MD8IC970NR1 850--940 MHz, 35 W AVG., 28 V RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 137 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 1 dB Compression Point ≃ 79 Watts CW Features • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • On--Chip Prematching. On--Chip Stabilization. • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. RFin2A RFout1A/VD1A VG1A RFin1A RFout2A/VD2A VG2A Quiescent Current Temperature Compensation (1) RFin2B RFout1B/VD1B VG2B RFout2B/VD2B RFin1B VG1B Quiescent Current Temperature Compensation (1) Figure 1. Functional Block Diagram CASE 1866--02 TO--270 WBL--16 PLASTIC RFin2A RFout1A/VD1A GND GND VG1A RFin1A VG2A VG2B RFin1B VG1B GND GND RFout1B/VD1B RFin2B 1 2 3 4 5 6 7 8 9 10 11 12 13 14 16 RFout2A/ VD2A 15 RFout2B/ VD2B (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. © Freescale Semiconductor, Inc., 2011. All rights reserved. RF Device Data Freescale Semiconductor MD8IC970NR1 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +70 Vdc Gate--Source Voltage VGS --0.5, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Input Power Pin 30 dBm Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Final Application RθJC Thermal Resistance, Junction to Case Case Temperature 80°C, 35 W CW Stage 1, 28 Vdc, IDQ1(A+B) = 60 mA, f1 = 939.9 MHz, f2 = 940.1 MHz Stage 2, 25 Vdc, IDQ2(A+B) = 550 mA, f1 = 939.9 MHz, f2 = 940.1 MHz °C/W 2.9 0.6 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1A (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) I (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 40 μAdc) VGS(th) 1.2 2.0 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1(A+B) = 60 mAdc) VGS(Q) — 3.1 — Vdc Fixture Gate Quiescent Voltage (VDD1 = 28 Vdc, IDQ1(A+B) = 60 mAdc, Measured in Functional Test) VGG(Q) 9.0 10.0 11.0 Vdc Characteristic Stage 1 — Off Characteristics (4) Stage 1 — On Characteristics (4) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Side A and Side B are tied together for this measurement. (continued) MD8IC970NR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 320 μAdc) VGS(th) 1.2 2.0 2.7 Vdc Gate Quiescent Voltage (VDS = 25 Vdc, IDQ2(A+B) = 550 mAdc) VGS(Q) — 3.1 — Vdc Fixture Gate Quiescent Voltage (VDD2 = 25 Vdc, IDQ2(A+B) = 550 mAdc, Measured in Functional Test) VGG(Q) 7.6 8.6 9.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.2 Adc) VDS(on) 0.1 0.48 1.2 Vdc Characteristic Stage 2 — Off Characteristics (1) Stage 2 — On Characteristics (1) Functional Tests (1,2) (In Freescale Test Fixture, 50 ohm system) VDD1 = 28 Vdc, VDD2 = 25 Vdc, Pout = 35 W Avg., IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA, f1 = 939.9 MHz, f2 = 940.1 MHz Power Gain Gps 31.5 32.6 36.5 dB Power Added Efficiency PAE 40.5 42.1 — % IMD — --31.3 --29.0 dB Intermodulation Distortion (1) (In Typical Broadband Performance IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA Freescale Test Fixture, 50 ohm system) VDD1 = 28 Vdc, VDD2 = 25 Vdc, Pout = 35 W Avg., Frequency Gps (dB) PAE (%) IMD (dBc) 850 MHz 30.6 40.1 --30.5 900 MHz 31.9 42.4 --31.0 940 MHz 32.6 42.1 --31.3 Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD1 = 28 Vdc, VDD2 = 25 Vdc, IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA, 850--940 MHz Bandwidth Characteristic Pout @ 1 dB Compression Point, CW Symbol Min Typ Max Unit P1dB — 79 — W — 22 — IMD Symmetry @ 71 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 50 — MHz ∆IQT — — 5.03 4.61 — — % Gain Flatness in 90 MHz Bandwidth @ Pout = 35 W Avg. GF — 1.2 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.03 — dB/°C ∆P1dB — 0.005 — dB/°C Quiescent Current Accuracy over Temperature with 8.25 kΩ Gate Feed Resistors (--30 to 85°C) (3) Output Power Variation over Temperature (--30°C to +85°C) Stage 1 Stage 2 MHz 1. Side A and Side B are tied together for this measurement. 2. Part internally matched both on input and output. 3. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. MD8IC970NR1 RF Device Data Freescale Semiconductor 3 VDD1A R2 C1 VGG1A C9 C5 Z1 L3 C17 C2 C6 VGG1B C10 VDD1B R3 C14 C8 C27 R7 L4 VDD2A C19 R6 C18 R8 C35 R4 C16 C12 C4 VGG2B C7 C13 C11 C15 C3 R1 L5 L1 C21 C22 C20 R5 L2 CUT OUT AREA VGG2A C23 C29 C25 C31 C26 C32 C24 C30 C33 Z2 R10 C34 VDD2B C28 C36 L6 R9 MD8IC970N Rev. 1 Figure 3. MD8IC970NR1 Test Circuit Component Layout Table 6. MD8IC970NR1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C35, C36 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C3, C4, C9, C10 1 μF, 50 V Chip Capacitors GRM31MR71H105KA88L Murata C5, C6 3.3 pF Chip Capacitors ATC600F3R3BT250XT ATC C7, C8, C27, C28, C33, C34 39 pF Chip Capacitors ATC600F390JT250XT ATC C11, C12 47 pF Chip Capacitors ATC600S470JT250XT ATC C13, C14 4.7 pF Chip Capacitors ATC600S4R7JT250XT ATC C15, C16, C19, C20 0.1 μF, 50 V Chip Capacitors GRM188R71C104K01D Murata C17, C18 5.6 pF Chip Capacitors ATC600S5R6JT250XT ATC C21, C22 15 pF Chip Capacitors ATC600F150JT250XT ATC C23, C24, C25, C26 4.7 pF Chip Capacitors ATC600F4R7BT250XT ATC C29. C30, C31, C32 2.7 pF Chip Capacitors ATC600F2R7BT250XT ATC L1, L2, L5, L6 5.0 nH 2 Turn Inductors A02TKLC Coilcraft L3, L4 2.8 nH Chip Inductors 0805CS--020XJLC Coilcraft R1 51 Ω, 1/8 W Chip Resistor SG73P2ATTD51R0F KOA Speer R2, R3, R8, R9 10 Ω, 1/8 W Chip Resistors RK73H2ATTD10R0F KOA Speer R4, R5, R6, R7 8.25 kΩ, 1/10 W Chip Resistors RK73H1JTTD8251F KOA Speer R10 50 Ω, 10 W SM Chip Power Resistor 81A7031--50--5F Florida RF Labs Z1, Z2 900 MHz Band, 90°, 3 dB Chip Hybrid Couplers GSC362--HYB0900 Soshin PCB 0.030″, εr = 3.66 RO4350B Rogers MD8IC970NR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) PAE, POWER ADDED EFFICIENCY (%) 44 PAE 35 42 34 40 33 38 32 Gps 31 --27 VDD1 = 28 Vdc, VDD2 = 25 Vdc, IDQ1(A+B) = 60 mA --28 IDQ2(A+B) = 550 mA, Pout = 35 W (Avg.) --29 200 kHz Tone Spacing 30 29 28 36 --30 IMD 27 26 820 --31 --32 840 860 880 900 920 940 960 980 IMD, INTERMODULATION DISTORTION (dBc) 36 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Two--Tone Broadband Performance @ Pout = 35 Watts Avg. --10 VDD1 = 28 Vdc, VDD2 = 25 Vdc, Pout = 71 W (PEP) IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 900 MHz --20 IM3--U --30 IM3--L IM5--U --40 IM5--L IM7--U --50 --60 IM7--L 1 10 100 TWO--TONE SPACING (MHz) Figure 5. Intermodulation Distortion Products versus Two--Tone Spacing PAE Gps 33 50 40 IMD 32 30 31 20 30 10 29 10 0 20 30 40 50 --10 --20 --30 --40 --50 --60 IMD, INTERMODULATION DISTORTION (dBc) Gps, POWER GAIN (dB) 34 0 60 VDD1 = 28 Vdc, VDD2 = 25 Vdc, IDQ1(A+B) = 60 mA IDQ2(A+B) = 550 mA, f1 = 939.9 MHz, f2 = 940.1 MHz PAE, POWER ADDED EFFICIENCY (%) 35 60 Pout, OUTPUT POWER (WATTS) Figure 6. Power Gain, Power Added Efficiency and Intermodulation Distortion Products versus Average Output Power MD8IC970NR1 RF Device Data Freescale Semiconductor 5 34 Gps, POWER GAIN (dB) 60 VDD1 = 28 Vdc, VDD2 = 25 Vdc, IDQ1(A+B) = 60 mA IDQ2(A+B) = 550 mA, 200 kHz Tone Spacing 900 MHz 32 Gps 30 50 940 MHz 40 850 MHz 30 IMD 28 20 940 MHz 26 900 MHz PAE 10 850 MHz 0 100 24 1 --10 PAE, POWER ADDED EFFICIENCY (%) 36 10 --20 --30 --40 --50 --60 --70 IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Power Gain, Power Added Efficiency and Intermodulation Distortion Products versus Output Power 36 34 VDD1 = 28 Vdc, VDD2 = 25 Vdc Pin = 0 dBm, IDQ1(A+B) = 60 mA IDQ2(A+B) = 550 mA Gain GAIN (dB) 32 30 28 26 24 700 750 800 850 900 950 1000 1050 1100 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response MD8IC970NR1 6 RF Device Data Freescale Semiconductor VDD1 = 28 Vdc, IDQ1(A) = 30 mA Zin f MHz Zin Ω Zload Ω f MHz Zin Ω Zload Ω 820 18.4 -- j13.0 11.3 + j20.0 330 31.2 -- j21.5 16.2 + j57.8 840 18.8 -- j12.7 11.7 + j21.9 350 33.6 -- j18.7 24.2 + j59.6 860 19.1 -- j12.9 12.1 + j23.4 370 35.8 -- j18.8 29.8 + j55.6 880 19.1 -- j13.2 12.5 + j24.5 390 36.4 -- j19.6 29.0 + j52.8 900 18.7 -- j13.6 12.7 + j25.1 410 37.0 -- j20.1 27.8 + j54.7 920 18.0 -- j13.9 12.5 + j25.6 430 37.7 -- j21.7 30.2 + j58.5 940 17.2 -- j14.2 11.8 + j26.0 450 36.2 -- j24.8 38.8 + j59.1 960 16.1 -- j14.3 10.9 + j26.6 980 14.6 -- j14.3 9.6 + j27.4 Zin = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Zin f MHz Zin Ω Zload Ω 120 42.7 -- j27.4 47.3 + j80.0 130 40.0 -- j22.5 61.4 + j93.3 140 40.2 -- j16.0 84.0 + j104.2 150 43.8 -- j13.3 114.5 + j107.2 160 47.8 -- j10.0 147.2 + j98.5 170 51.5 -- j10.0 179.4 + j81.3 180 54.9 -- j10.6 215.9 + j53.3 190 58.2 -- j12.9 256.6 -- j7.6 200 59.6 -- j16.9 233.3 -- j109.9 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Z in Z load Figure 9. Series Equivalent Input and Load Impedance — Stage 1 NOTE: Measurement made on a per side basis. MD8IC970NR1 RF Device Data Freescale Semiconductor 7 VDD2 = 25 Vdc, IDQ2(A) = 275 mA, Pout = 17.5 Watts Avg. Zin f MHz Zin Ω Zload Ω f MHz Zin Ω Zload Ω 820 9.49 + j10.2 3.19 + j1.99 330 5.78 + j3.02 5.53 + j1.53 840 10.3 + j10.3 3.29 + j2.11 350 5.73 + j3.40 6.27 + j1.77 860 11.2 + j10.2 3.39 + j2.18 370 5.66 + j3.89 6.95 + j1.55 880 12.2 + j9.89 3.45 + j2.20 390 5.63 + j4.34 7.18 + j0.90 900 13.1 + j9.34 3.46 + j2.16 410 5.60 + j4.75 6.67 + j0.22 920 14.0 + j8.53 3.40 + j2.08 430 5.53 + j5.06 5.61 + j0.05 940 14.6 + j7.51 3.24 + j2.00 450 5.38 + j5.32 4.45 + j0.57 960 15.1 + j6.28 2.98 + j1.96 980 15.2 + j4.87 2.66 + j1.99 Zin = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Zin f MHz Zin Ω Zload Ω 120 5.47 -- j0.60 5.74 + j2.70 130 5.46 -- j0.36 6.36 + j1.97 140 5.47 -- j0.13 6.21 + j1.37 150 5.47 + j0.11 5.95 + j1.37 160 5.46 + j0.35 6.09 + j1.63 170 5.43 + j0.56 6.59 + j1.58 180 5.42 + j0.75 6.70 + j0.92 190 5.49 + j0.93 5.73 + j0.82 200 5.42 + j1.05 4.83 + j2.57 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Z in Z load Figure 10. Series Equivalent Input and Load Impedance — Stage 2 NOTE: Measurement made on a per side basis. MD8IC970NR1 8 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS — STAGE 2 VDD2 = 25 Vdc, IDQ2 = 300 mA, CW VDD2 = 25 Vdc, IDQ2 = 300 mA, CW Max Pout P1dB Max Eff. Zsource Ω Zload (1) Ω P1dB % f MHz Zsource Ω Zload (1) Ω dBm W f MHz 850 10.9 + j10.2 3.34 + j2.16 47.1 51 850 10.9 + j10.2 3.36 + j3.93 66.2 940 14.6 + j7.51 3.24 + j2.00 46.8 48 940 14.6 + j7.51 2.95 + j3.66 62.1 (1) Load impedance for optimum P1dB power. (1) Load impedance for optimum P1dB efficiency. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Input Load Pull Tuner Z Z source Input Load Pull Tuner Output Load Pull Tuner Device Under Test Z load Output Load Pull Tuner Device Under Test source Z load Figure 11. Single Side Load Pull Performance — Maximum P1dB Tuning Figure 12. Single Side Load Pull Performance — Maximum Efficiency Tuning VDD2 = 25 Vdc, IDQ2 = 300 mA, CW VDD2 = 25 Vdc, IDQ2 = 300 mA, CW Max Pout f MHz Zload (1) Ω Zsource Ω P1dB dBm W 430 5.53 + j5.06 5.61 + j0.05 46.8 (1) Load impedance for optimum P1dB power. 48 Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Input Load Pull Tuner Output Load Pull Tuner Device Under Test Z source Z load Figure 13. Single Side Load Pull Performance — Maximum P1dB Tuning Max Eff. f MHz Zsource Ω 430 5.53 + j5.06 Zload Ω (1) 5.96 + j2.65 P1dB % 66.1 (1) Load impedance for optimum P1dB efficiency. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Input Load Pull Tuner Output Load Pull Tuner Device Under Test Z source Z load Figure 14. Single Side Load Pull Performance — Maximum Efficiency Tuning MD8IC970NR1 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS MD8IC970NR1 10 RF Device Data Freescale Semiconductor MD8IC970NR1 RF Device Data Freescale Semiconductor 11 MD8IC970NR1 12 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Feb. 2011 Description • Initial Release of Data Sheet MD8IC970NR1 RF Device Data Freescale Semiconductor 13 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. MD8IC970NR1 Document Number: MD8IC970N Rev. 0, 2/2011 14 RF Device Data Freescale Semiconductor